Methods for forming an electrode device with reduced impedance

1. A method for providing a neural interface system, comprising the steps of:

depositing at least one primary metallization layer on a substrate, the primary metallization layer having a thickness;

depositing a monolayer of nanospheres in a substantially uniform distribution, wherein the nanospheres contact an upper surface of the primary metallization layer, wherein the monolayer contains interstitial spaces between the nanospheres; and

treating the upper surface of the primary metallization layer not contacted by the nanospheres to form a plurality of undulating structures having a substantially uniform arrangement, the treating comprising etching, through the interstitial spaces between the nanospheres, recesses part-way through the thickness of exposed portions of the primary metallization layer from the upper surface thereof.

2. The method of claim 1 , wherein an undulating structure of the plurality of undulating structures is a pyramidal structure having a flattened top portion.

3. The method of claim 1 , wherein the plurality of undulating structures includes square wave undulations.

4. The method of claim 1 , wherein the plurality of undulating structures includes one of pyramidal wave undulations, square wave undulations, or approximately triangular wave undulations that are recessed between about 50 percent to about 90 percent through the thickness of the primary metallization layer.

5. The method of claim 1 , wherein the recesses are not in communication with each other.

6. The method of claim 1 further comprising:

removing the nanospheres from the substrate after forming recessed or extending undulations on the primary metallization layer.

7. A method for providing a neural interface system, comprising the steps of:

depositing at least one primary metallization layer on a substrate, the primary metallization layer having a first thickness;

depositing a monolayer of nanospheres contacting an upper surface of the primary metallization layer, wherein the monolayer contains interstitial spaces between the nanospheres; and

treating the upper surface of the primary metallization layer not covered by the nanospheres to thereby form a plurality of undulating structures within the interstitial spaces, wherein a height of each of the plurality of undulating structures is less than a radius of the nanospheres and wherein a base of a corresponding undulating structure of the plurality of undulating structures has a first cross-sectional width that is greater than a second cross-sectional width of a top of the corresponding undulating structure, the treating comprising depositing, through the interstitial spaces, a secondary metallization layer on the primary metallization layer to thereby provide the plurality of undulating structures.

8. The method of claim 7 , wherein the nanospheres have a diameter ranging from about 500 nm to about 5,000 nm.

9. The method of claim 7 , wherein the secondary metallization layer has a second thickness ranging from about 225 nm to about 2,250 nm above the upper surface of the primary metallization layer.

10. The method of claim 9 , further comprising:

discontinuing deposition of the secondary metallization layer when the second thickness has reached about 90% of a radius of the nanospheres.

11. The method of claim 9 further comprising:

depositing a tertiary metallization material on the secondary metallization layer to thereby form a metallization stack, wherein the secondary metallization layer is more etchable than the primary metallization layer, and the tertiary metallization material is less etchable than the secondary metallization layer; and

etching the metallization stack to remove a portion of the secondary metallization layer so that a greater surface area of the primary and tertiary metallization materials is obtained.

12. The method of claim 11 , wherein the primary metallization layer and tertiary metallization material contain different materials.

13. The method of claim 11 , wherein the secondary metallization layer contains gold.

14. The method of claim 11 , wherein the primary and tertiary metallization materials are selected from a group consisting of platinum, iridium, iridium oxide, and titanium nitride.

15. The method of claim 7 further comprising:

removing the nanospheres from the substrate after forming recessed or extending undulations on the primary metallization layer.

16. A method for providing a neural interface system, comprising the steps of:

depositing at least one primary metallization layer on a substrate;

depositing a monolayer of nanospheres contacting an upper surface of the primary metallization layer, wherein the monolayer contains interstitial spaces between the nanospheres;

treating the upper surface of the primary metallization layer not covered by the nanospheres to thereby form a plurality of undulating structures having substantially uniform arrangement, the treating comprising etching, through the interstitial spaces between the nanospheres, recesses part-way through exposed portions of the primary metallization layer from the upper surface thereof; and

removing the nanospheres from the substrate.

17. The method of claim 16 , wherein the substrate is a dielectric material selected from the group consisting of parylene, polyimide, silicone, silicon carbide, and silicon.

18. The method of claim 16 , wherein the nanospheres self-assemble into a uniform spatial pattern at room temperature.

19. The method of claim 18 , wherein the nanospheres are of substantially identical size and shape.

20. The method of claim 16 , wherein the nanospheres are deposited on the primary metallization layer by drop-wetting, a Langmuir-Blodgett technique, or spin coating.