Deposition approaches for emitter layers of solar cells
Methods of fabricating solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a thin dielectric layer on a surface of a substrate by radical oxidation or plasma oxidation of the surface of the substrate. The method also involves forming a silicon layer over the thin dielectric layer. The method also involves forming a plurality of emitter regions from the silicon layer.
1. A method of fabricating a solar cell, the method comprising:
forming a thin dielectric layer on a surface of a substrate;
forming a patterned silicon layer over the thin dielectric layer using a shadow mask;
forming a plurality of emitter regions from the patterned silicon layer; and
forming conductive contacts electrically connected to the plurality of emitter regions using a mask, wherein the mask comprises a wire mask.
2. The method of claim 1 , wherein forming the thin dielectric layer on the surface of the substrate comprises forming the thin dielectric layer by radical oxidation or plasma oxidation of the surface of the substrate.
3. The method of claim 1 , further comprising:
prior to forming the thin dielectric layer, dry cleaning the surface of the substrate to remove metal or organic contaminants.
4. The method of claim 1 , wherein forming the plurality of emitter regions from the patterned silicon layer comprises doping the patterned silicon layer in an implant chamber housed in a tool that also houses a plasma enhanced chemical vapor deposition (PECVD) chamber used to form the thin dielectric layer or the patterned silicon layer, or both.
5. The method of claim 1 , further comprising:
forming conductive contacts electrically connected to the plurality of emitter regions.
6. The method of claim 1 , wherein forming the conductive contacts comprises forming the conductive contacts using a shadow mask.
7. A solar cell fabricated according to the method of claim 1 .
8. The method of claim 1 , wherein forming the conductive contacts comprises forming an aluminum-based metal layer.
9. The method of claim 8 , wherein the forming an aluminum-based metal layer comprises forming an aluminum-based metal seed layer.
10. The method of claim 8 , further comprising:
forming a copper layer on the aluminum-based metal layer.
11. The method of claim 10 , wherein forming the copper layer comprises plating the copper layer to the aluminum-based metal layer.
12. The method of claim 1 , further comprising:
prior to forming the conductive contacts, forming an anti-reflective coating layer over the patterned silicon layer.
13. The method of claim 12 , further comprising:
forming contact openings in the anti-reflective coating layer using laser ablation.
14. The method of claim 13 , further comprising:
placing solder balls in the contact openings.
15. The method of claim 13 , further comprising:
printing solder paste in the contact openings.
16. The method of claim 1 , further comprising:
electrically coupling wires to the conductive contacts.