Synthesis of silicon-carbon composite in a gas phase reactor
A process for producing a silicon-SiC composite powder is provided. A gas stream I containing SiH 4 , Si 2 H 6 and/or Si 3 H 8 and at least one hydrocarbon of ethene and acetylene and a coaxial gas stream II containing hydrogen are fed into a hot wall reactor. The gas stream II forms the jacket stream with respect to the gas stream I. At least the gas stream I is reacted at a temperature of 900° C. to 1100° C. and subsequently at the outlet of the hot wall reactor the reaction mixture is cooled or allowed to cool and the pulverulent reaction product is separated from the gaseous materials.
1. A process for producing a silicon-SiC composite powder, the process comprising:
a) introducing a gas stream I and a gas stream II via a coaxial nozzle having a core orifice and an outer orifice into a hot wall reactor, wherein the gas stream I comprising at least one silane selected from the group consisting of SiH 4 , Si 2 H 6 and Si 3 H 8 and at least one hydrocarbon selected from the group consisting of ethene and acetylene is introduced into the hot wall reactor as a core stream via the core orifice; and the gas stream II containing hydrogen is coaxially introduced into the hot wall reactor via the outer orifice so that the gas stream II forms a jacket stream with respect to the gas stream I,
b) reacting at least the gas stream I at a temperature of 900° C. to 1100° C. to obtain a reaction mixture, and subsequently
c) cooling the reaction mixture or allowing the reaction mixture to cool at an outlet of the hot wall reactor and separating pulverulent reaction product from gaseous materials.
2. The process according to claim 1 , wherein a laminar flow through the hot wall reactor is established.
3. The process according to claim 1 , wherein in a), the gas stream I contains ethene or acetylene and further contains argon.
4. The process according to claim 1 , wherein at least two heating zones are employed in the hot wall reactor.
5. The process according to claim 4 , wherein a first heating zone of the hot wall reactor is heated at a temperature of 900° C. to 1010° C.
6. The process according to claim 5 , wherein a second heating zone is heated at a temperature of 1000° C. to 1100° C.
7. The process according to claim 6 , wherein the second heating zone is heated at a temperature of 1050° C. to 1100° C.
8. The process according to claim 1 , wherein the hot wall reactor has a main axis and the coaxial nozzle has the same axis as the main axis of the hot wall reactor.
9. The process according to claim 1 , wherein the gas stream I has a silicon to carbon ratio of from 20:1 to 1:10.