Methods of forming polycrystalline diamond compact including crack-resistant polycrystalline diamond table
Embodiments relate to polycrystalline diamond compacts (“PDCs”) including a substrate and a polycrystalline diamond (“PCD”) table mounted to the substrate. The PCD table includes an upper surface and one or more recesses extending inwardly from the upper surface of the PCD table. The one or more recesses may help prevent, stop, or limit crack propagation and may redistribute, breakup, or relieve stresses in the PCD table. In some embodiments, the one or more recesses exhibit, in plain view, a generally rectangular geometry, a generally circular geometry, or a generally triangular geometry. In some embodiments, the PCD table includes one or more channels that extend from a vertex of the one or more recesses. In some embodiments, the one or more channels and the one or more recesses may be at least partially filled with a sacrificial material. Methods for forming such PDCs are also discussed.
1. A method of forming a polycrystalline diamond compact, the method comprising:
positioning a plurality of stacked discs at least proximate to a substrate, the plurality of stacked discs including one or more sacrificial materials;
positioning a plurality of diamond particles adjacent to a portion of the one or more stacked discs to form an assembly;
subjecting the assembly to a high-pressure, high-temperature process effective to form a polycrystalline diamond table and bond the polycrystalline diamond table to the substrate; and
after subjecting the assembly to the high-pressure, high-temperature process, removing the one or more sacrificial materials from the polycrystalline diamond table using at least one of leaching or laser machining.
2. The method of claim 1 wherein at least some of the plurality of stacked discs exhibit different lateral dimensions.
3. The method of claim 2 wherein the different lateral dimensions are different diameters.
4. The method of claim 1 wherein the plurality of stacked discs form a solid body.
5. The method of claim 1 wherein the plurality of stacked discs define one or more recesses that exhibit a decreasing diameter with increasing distance from the substrate.
6. The method of claim 1 wherein the plurality of stacked discs include a plurality of stacked annular discs.
7. The method of claim 1 wherein the plurality of stacked discs define one or more recesses that include at least one surface exhibiting a stepped geometry.
8. The method of claim 1 wherein the polycrystalline diamond table includes a plurality of diamond grains bonded together that define a plurality of interstitial regions and at least a portion of the plurality of interstitial regions include at least one catalyst disposed therein, wherein the one or more sacrificial materials are substantially free of the at least one catalyst.
9. The method of claim 1 wherein:
the polycrystalline diamond table includes a plurality of diamond grains bonded together that define a plurality of interstitial regions; and
subjecting the assembly to a high-pressure, high-temperature process includes infiltrating some of the one or more sacrificial materials into at least some of the plurality of interstitial regions.
10. A method of forming a polycrystalline diamond compact, the method comprising:
positioning one or more sacrificial materials at least proximate to a substrate, the one or more sacrificial materials including at least one surface exhibiting a stepped geometry;
positioning a plurality of diamond particles adjacent to a portion of the one or more sacrificial materials to form an assembly; and
subjecting the assembly to a high-pressure, high-temperature process effective to form a polycrystalline diamond table and bond the polycrystalline diamond table to the substrate;
wherein the one or more sacrificial materials define one or more recess in the polycrystalline diamond table that are sized and configured to reduce cracking and/or crack propagation in the polycrystalline diamond table during use.
11. The method of claim 10 wherein the one or more sacrificial materials include at least one refractory metal that form a plurality of stacked discs.
12. The method of claim 10 wherein the one or more sacrificial materials include at least one ceramic that form a plurality of stacked discs.
13. The method of claim 10 wherein the one or more recesses defined by the one or more sacrificial materials exhibit a decreasing diameter with increasing distance from the substrate.
14. The method of claim 10 wherein the polycrystalline diamond table includes a plurality of diamond grains bonded together that define a plurality of interstitial regions and at least a portion of the plurality of interstitial regions include at least one catalyst disposed therein, wherein the one or more sacrificial materials are substantially free of the at least one catalyst.
15. The method of claim 10 , further comprising removing the one or more sacrificial materials from the polycrystalline diamond table after subjecting the assembly to the high-pressure, high-temperature process.
16. The method of claim 15 , wherein removing the one or more sacrificial materials from the polycrystalline diamond table using at least one of leaching or laser machining.
17. A method of forming a polycrystalline diamond compact, the method comprising:
positioning one or more sacrificial materials at least proximate to a substrate;
positioning a plurality of diamond particles adjacent to a portion of the one or more sacrificial materials to form an assembly; and
subjecting the assembly to a high-pressure, high-temperature process effective to form a polycrystalline diamond table and bond the polycrystalline diamond table to the substrate;
wherein the one or more sacrificial materials define one or more recess in the polycrystalline table, the one or more recesses exhibiting a decreasing diameter with increasing distance from the substrate.
18. The method of claim 17 wherein the polycrystalline diamond table includes a plurality of diamond grains bonded together that define a plurality of interstitial regions and at least a portion of the plurality of interstitial regions include at least one catalyst disposed therein, wherein the one or more sacrificial materials are substantially free of the at least one catalyst.
19. The method of claim 17 , further comprising removing the one or more sacrificial materials from the polycrystalline diamond table after subjecting the assembly to the high-pressure, high-temperature process.
20. The method of claim 19 , wherein removing the one or more sacrificial materials from the polycrystalline diamond table using at least one of leaching or laser machining.