IP Library Granted Patent US 11,253,971
Granted Patent B1
US 11,253,971 · App. 16/020,751 · Granted Feb 22, 2022

Leached superabrasive elements and systems, methods and assemblies for processing superabrasive materials

Inventors: Daren Nathaniel Heaton (Spanish Fork, UT); Jeremy Brett Lynn (Nephi, UT); Mark Pehrson Chapman (Provo, UT); Oakley D. Bond (Nephi, UT)
Assignee: US Synthetic Corporation
B24D3/005B22F3/24B24D3/10B24D18/00C25F7/00B22F2003/244
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 11,253,971
App. No.
16/020,751
Granted
Feb 22, 2022
Kind
B1
Abstract

A method of processing a superabrasive element includes providing a superabrasive element including a polycrystalline diamond table that includes a metallic material disposed in interstitial spaces defined within the polycrystalline diamond table. The polycrystalline diamond table includes a superabrasive face and a superabrasive side surface extending around an outer periphery of the superabrasive face. The method also includes leaching the metallic material from at least a volume of the polycrystalline diamond table to produce a leached volume in the polycrystalline diamond table by (1) exposing at least a portion of the polycrystalline diamond table to a processing solution, (2) exposing an electrode to the processing solution, and (3) applying a charge to the electrode such that a voltage is generated between the polycrystalline diamond table and the electrode and the voltage is applied to the processing solution.

Claims (86)

1. A method of processing a superabrasive element, the method comprising:

providing a superabrasive element comprising a polycrystalline diamond table that comprises a metallic material disposed in interstitial spaces defined within the polycrystalline diamond table, the polycrystalline diamond table comprising;

a superabrasive face;

a superabrasive side surface extending around an outer periphery of the superabrasive face;

leaching the metallic material from at least a volume of the polycrystalline diamond table to produce a leached volume in the polycrystalline diamond table by:

exposing at least a portion of the polycrystalline diamond table to a processing solution;

exposing an electrode to the processing solution;

positioning the electrode relatively closer in proximity to the superabrasive side surface of the superabrasive element than a central portion of the superabrasive face of the superabrasive element;

applying a charge to the electrode such that a voltage is generated between the polycrystalline diamond table and the electrode and the voltage is applied to the processing solution;

leaching the central portion of the superabrasive face of the superabrasive element to a first leached depth; and

leaching a region adjacent to the superabrasive side surface of the superabrasive element to a second leached depth that is greater than the first leached depth.

2. The method of claim 1 , further comprising selecting the electrode to comprise a ring shape.

3. The method of claim 1 , wherein:

the polycrystalline diamond table further comprises a chamfer extending between the superabrasive face and the superabrasive side surface;

the leached volume has a greater depth in the region adjacent to the superabrasive side surface than a region adjacent to a central portion of the superabrasive face.

4. The method of claim 1 , wherein the leached volume surrounds at least a portion of an additional volume in the polycrystalline diamond table, the additional volume having a higher concentration of the metallic material than the leached volume.

5. The method of claim 4 , wherein the additional volume is adjacent to a central portion of the superabrasive face.

6. The method of claim 4 , wherein a transition region between the leached volume and the additional volume extends from the superabrasive face to the superabrasive side surface.

7. The method of claim 1 , further comprising disposing the electrode near at least one of the superabrasive face and the superabrasive side surface, wherein the electrode does not directly contact the superabrasive face or the superabrasive side surface.

8. The method of claim 7 , further comprising disposing the electrode in closer proximity to the superabrasive side surface than to a central portion of the superabrasive face.

9. The method of claim 1 , wherein:

the superabrasive element further comprises a substrate; and

the polycrystalline diamond table is bonded to the substrate, the method further comprising applying the charge to the polycrystalline diamond table via the substrate.

10. The method of claim 1 , further comprising disposing a masking layer over at least a portion of the polycrystalline diamond table.

11. The method of claim 1 , further comprising at least partially oxidizing the metallic material with the processing solution.

12. The method of claim 1 , wherein the processing solution comprises an aqueous electrolyte solution that comprises electrolytes at a molar concentration of between approximately 0.01 M and approximately 3 M.

13. The method of claim 1 , wherein the processing solution comprises at least one of:

acetic acid;

ammonium chloride;

arsenic acid;

ascorbic acid;

carboxylic acid;

citric acid;

formic acid;

hydrobromic acid;

hydrofluoric acid;

hydroiodic acid;

lactic acid;

malic acid;

nitric acid;

oxalic acid;

phosphoric acid;

propionic acid;

pyruvic acid;

succinic acid;

tartaric acid; or

an ion, a salt, or an ester thereof.

14. The method of claim 1 , wherein the electrode comprises at least one of:

copper;

tungsten carbide;

cobalt;

zinc;

iron;

platinum;

palladium;

niobium;

graphite;

graphene;

nichrome;

gold;

silver.

15. The method of claim 1 , wherein the metallic material comprises at least one of:

cobalt;

nickel;

iron;

tungsten.

16. The method of claim 1 , wherein the charge comprises:

a first positive charge and a second negative charge;

a cation of the metallic material is present in the processing solution during the application of the first positive charge to the polycrystalline diamond table and the application of the second negative charge to the electrode.

17. The method of claim 16 , further comprising reducing the cation of the metallic material and electrodepositing the cation on the electrode.

18. A method of processing a superabrasive element, the method comprising:

producing a leached volume in a polycrystalline diamond table of a superabrasive element, the polycrystalline diamond table comprising a metallic material disposed in interstitial spaces defined within the polycrystalline diamond table, the producing the leached volume comprising:

leaching the metallic material from at least a volume of the polycrystalline diamond table;

exposing at least a portion of the polycrystalline diamond table to a processing solution;

exposing an electrode to the processing solution;

applying a charge to the electrode to generate a voltage between the polycrystalline diamond table and the electrode via the processing solution;

leaching the metallic material from a portion of the polycrystalline diamond table to a first depth relative to a superabrasive face of the superabrasive element; and

leaching the metallic material from an external side region of the polycrystalline diamond table to a second depth relative to a superabrasive side surface of the superabrasive element, the second depth being greater than the first depth.

19. A method of processing a superabrasive element, the method comprising:

leaching a metallic material from at least a volume of a polycrystalline diamond table of a superabrasive element to produce a leached volume in the polycrystalline diamond table, the polycrystalline diamond table comprising a metallic material disposed in interstitial spaces defined within the polycrystalline diamond table, the leaching comprising:

exposing at least a portion of the polycrystalline diamond table to a processing solution;

applying a charge to an electrode in communication with processing solution;

generating a voltage between the polycrystalline diamond table and the electrode;

leaching a region of the polycrystalline diamond table to a first depth underlying a superabrasive face of the superabrasive element; and

leaching a peripheral region of the polycrystalline diamond table to a second depth relative to a side surface of the superabrasive element, the second depth being greater than the first depth.

20. The method of claim 19 , further comprising selecting the processing solution to exhibit a pH below approximately 1.

Assignments (6)
SECURITY INTEREST Recorded Jul 18, 2025
From: US SYNTHETIC CORPORATION
To: KEYBANK NATIONAL ASSOCIATION
Reel/Frame 074973/0089 →
RELEASE OF SECURITY INTEREST IN PATENTS Recorded Jul 17, 2025
From: JPMORGAN CHASE BANK, N.A.
To: CHAMPIONX LLC; APERGY ESP SYSTEMS, LLC; APERGY BMCS ACQUISITION CORP; HARBISON-FISCHER, INC.; NORRIS RODS, INC.,; NORRIS RODS, INC.,; NORRISEAL-WELLMARK, INC.; PCS FERGUSON, INC.; QUARTZDYNE, INC.; US SYNTHETIC CORPORATION
Reel/Frame 072004/0019 →
RELEASE OF SECURITY INTEREST Recorded Jun 7, 2022
From: BANK OF AMERICA, N.A.
To: ACE DOWNHOLE, LLC; HARBISON-FISCHER, INC.; NORRIS RODS, INC.; PCS FERGUSON, INC.; QUARTZDYNE, INC.; SPIRIT GLOBAL ENERGY SOLUTIONS, INC.; THETA OILFIELD SERVICES, INC.; APERGY BMCS ACQUISITION CORP.; NORRISEAL-WELLMARK, INC.; US SYNTHETIC CORPORATION; WINDROCK, INC.
Reel/Frame 060305/0001 →
SECURITY INTEREST Recorded Jun 5, 2020
From: ACE DOWNHOLE, LLC; APERGY BMCS ACQUISITION CORP.; HARBISON-FISCHER, INC.; NORRIS RODS, INC.; NORRISEAL-WELLMARK, INC.; PCS FERGUSON, INC.; QUARTZDYNE, INC.; SPIRIT GLOBAL ENERGY SOLUTIONS, INC.; THETA OILFIELD SERVICES, INC.; US SYNTHETIC CORPORATION; WINDROCK, INC.
To: BANK OF AMERICA, N.A.
Reel/Frame 053790/0001 →
SECURITY AGREEMENT Recorded Nov 6, 2019
From: APERGY ESP SYSTEMS, LLC; APERGY BMCS ACQUISITION CORP.; PCS FERGUSON, INC.; QUARTZDYNE, INC.; THETA OILFIELD SERVICES, INC.; US SYNTHETIC CORPORATION; WINDROCK, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 050941/0695 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 28, 2018
From: HEATON, DAREN NATHANIEL; LYNN, JEREMY BRETT; CHAPMAN, MARK PEHRSON; BOND, OAKLEY D.
To: US SYNTHETIC CORPORATION
Reel/Frame 046234/0075 →