Strained gate semiconductor device having an interlayer dielectric doped with oxygen and a large species material
A semiconductor device including a gate stack over a substrate. The semiconductor device further includes an interlayer dielectric (ILD) at least partially enclosing the gate stack. The ILD includes a first portion doped with an oxygen-containing material, a second portion doped with a large species material, and a third portion being undoped by the oxygen-containing material and the large species material.
1. A semiconductor device, comprising:
a gate stack over a substrate; and
an interlayer dielectric (ILD) at least partially enclosing the gate stack, wherein the ILD comprises:
a first portion doped with an oxygen-containing material,
a second portion doped with a large species material, and
a third portion being undoped by the oxygen-containing material and the large species material.
2. The semiconductor device of claim 1 , wherein the second portion has a first lattice constant and the third portion has a second lattice constant, and the second lattice constant is smaller than the first lattice constant.
3. The semiconductor device of claim 1 , wherein the large species material is selected from a noble gas, a semiconductor material, or a metal.
4. A semiconductor device, comprising:
a gate stack over a fin material;
an interlayer dielectric (ILD) over the fin material and at least partially enclosing the gate stack, wherein the ILD comprises:
a first portion adjacent to a top surface of the ILD, the first portion being doped with an oxygen-containing species and a large species material, and
a second portion, wherein the second portion is doped with the large species material, and the large species material includes a metal selected from the group consisting of tin, gallium, and indium.
5. The semiconductor device of claim 4 , wherein the ILD further comprises a third portion beneath the second portion, and the third portion is an undoped portion of the ILD.
6. The semiconductor device of claim 4 , wherein the second portion is doped with a plurality of large species materials.
7. The device of claim 4 , wherein the large species material includes a noble gas selected from the group consisting of argon, krypton, and xenon.
8. The device of claim 4 , wherein the large species material includes a semiconductor material selected from the group consisting of silicon, germanium, phosphorous, and arsenic.
9. The device of claim 4 , wherein the second portion is free of the oxygen-containing species.
10. A semiconductor device, comprising:
a gate stack over a substrate; and
an interlayer dielectric (ILD) at least partially enclosing the gate stack, wherein the ILD comprises:
a first portion having a first sidewall,
a second portion over the first portion, wherein the second portion comprises an oxygen-containing material and a large species material, and the second portion has a second sidewall angled with respect to the first sidewall, and
a third portion between the first portion and the second portion, wherein the third portion comprises the large species material, wherein the third portion comprises a third sidewall parallel to the second sidewall.
11. The semiconductor device of claim 10 , wherein an angle between the first sidewall and the second sidewall is a positive angle.
12. The semiconductor device of claim 10 , wherein an angle between the first sidewall and the second sidewall is a positive angle of at most 8-degrees.
13. The semiconductor device of claim 10 , wherein the second sidewall is angled at a clockwise obtuse angle with respect to the first sidewall.
14. The semiconductor device of claim 13 , wherein the third portion is free of the oxygen-containing material.
15. The semiconductor device of claim 13 , wherein the third portion comprises a fourth sidewall parallel to the first sidewall.
16. The semiconductor device of claim 13 , wherein the first portion is free of the oxygen-containing material and the large species material.
17. The semiconductor device of claim 13 , wherein the fourth sidewall is between the third sidewall and the first sidewall.
18. The semiconductor device of claim 10 , wherein the large species material comprises at least one of argon, krypton, xenon, silicon, germanium, phosphorous, arsenic, tin, gallium, or indium.
19. The semiconductor device of claim 10 , further comprising raised source/drain regions.
20. The semiconductor device of claim 10 , wherein the gate stack comprises:
a gate oxide;
a work function layer; and
a conductive layer.