Self-aligned gate edge architecture with alternate channel material
Techniques are disclosed for forming integrated circuits configured with self-aligned isolation walls and alternate channel materials. The alternate channel materials in such integrated circuits provide improved carrier mobility through the channel. In an embodiment, an isolation wall is between sets of fins, at least some of the fins including an alternate channel material. In such cases, the isolation wall laterally separates the sets of fins, and the alternate channel material provides improved carrier mobility. For instance, in the case of an NMOS device the alternate channel material is a material optimized for electron flow, and in the case of a PMOS device the alternate channel material is a material optimized for hole flow.
1. An integrated circuit structure, comprising:
a first set of one or more fins including a first fin, the first fin comprising a first semiconductor material;
a first gate structure over the first set of fins and in contact with the first semiconductor material, the first gate structure having opposing first and second sides;
a second set of one or more fins including a second fin, the second fin comprising a second semiconductor material;
a second gate structure over the second set of fins and in contact with the second semiconductor material, the second gate structure having opposing first and second sides;
a substrate below the fins, the substrate comprising a third semiconductor material compositionally different from the first semiconductor material, wherein the first fin is on a fin stub, the fin stub comprising the third semiconductor material; and
an isolation wall laterally adjacent to the second side of the first gate structure and the first side of the second gate structure, the isolation wall having a first sidewall that is a first distance from a right sidewall of a rightmost fin of the first set of fins, the isolation wall having a second sidewall that is a second distance from a left sidewall of a leftmost fin of the second set of fins;
wherein the difference between the first and second distances is 2 nm or less, and the first and second distances being measured in the same horizontal plane.
2. The integrated circuit of claim 1 , wherein the difference between the first and second distances is 1 nm or less.
3. The integrated circuit of claim 1 , wherein the difference between the first and second distances is 0.5 nm or less.
4. The integrated circuit of claim 1 , wherein the isolation wall is centered between the first gate structure and the second gate structure.
5. The integrated circuit of claim 1 , wherein the isolation wall is a first isolation wall, the integrated circuit further comprising:
a second isolation wall laterally adjacent to the first side of the first gate structure, the second isolation wall having a sidewall that is a third distance from a left sidewall of a leftmost fin of the first set of fins;
wherein the difference between the first and third distances is 2 nm or less, and the first and third distances being measured in the same horizontal plane.
6. The integrated circuit of claim 5 , wherein the difference between the first and third distances is 1 nm or less.
7. The integrated circuit of claim 5 , wherein the difference between the first and third distances is 0.5 nm or less.
8. The integrated circuit of claim 1 , wherein the third semiconductor material is compositionally different from the second semiconductor material.
9. The integrated circuit of claim 1 , wherein the first semiconductor material is compositionally different from the second semiconductor material.
10. The integrated circuit of claim 1 , wherein the first semiconductor material is compositionally the same as the second semiconductor material.
11. The integrated circuit of claim 1 , wherein the first gate structure is part of a PMOS transistor, and the first semiconductor material is germanium.
12. The integrated circuit of claim 1 , wherein the first gate structure is part of a PMOS transistor, and the first semiconductor material comprises silicon and germanium.
13. The integrated circuit of claim 1 , wherein the first gate structure is part of a PMOS transistor, and the first semiconductor material comprises silicon, germanium, and carbon.
14. The integrated circuit of claim 1 , wherein the first gate structure is part of an NMOS transistor, and the first semiconductor material is silicon.
15. The integrated circuit of claim 1 , wherein the first gate structure is part of an NMOS transistor, and the first semiconductor material is germanium.
16. The integrated circuit of claim 1 , wherein the first gate structure is part of an NMOS transistor, and the first semiconductor material comprises silicon and germanium.
17. The integrated circuit of claim 1 , wherein the first gate structure is part of an NMOS transistor, and the first semiconductor material comprises silicon, germanium, and carbon.
18. The integrated circuit of claim 1 , wherein the first gate structure is part of an NMOS transistor, and the first semiconductor material is a group III-V semiconductor material.
19. The integrated circuit of claim 1 , wherein the first set of fins includes a plurality of first fins, the second set of fins includes a plurality of second fins, the plurality of first fins being a different number than the plurality of second fins.