Method and system for integrated differential electro-absorption modulator device

1. An EAM (Electro-Absorption Modulator) device, the device comprising:

a substrate member comprising a first region including crystalline silicon overlying a second region including a buried oxide;

an electrical driver circuit configured overlying the substrate member and comprising a differential electrical driver circuit configured on a first application-specific integrated circuit (ASIC) overlying the first region to provide a first driver output and a second driver output;

a first EAM module having a line input electrically coupled to the first driver output of the electrical driver circuit, the first EAM module including a first optical output to a first waveguide in the first region;

a second EAM module having a line input electrically coupled to the second driver output of the electrical driver circuit, the second EAM including a second optical output to a second waveguide in the first region;

a common mode termination resistor having a first end electrically coupled to the first driver output and the line input of the first EAM module and having a second end electrically coupled to the second driver output and the line input of the second EAM module;

a bias circuit configured to provide a DC bias voltage to a bias input of the first EAM module and a bias input of the second EAM module; and

a self-test block featuring a first broadband source and a second broadband source and configured to provide a built-in self-test (BIST) electrical equivalent output to a spectrum analyzer via a second substrate member.

2. The device of claim 1 further comprising a common mode voltage node electrically coupled between the bias input of the first EAM module and the bias input of the second EAM module, wherein the first EAM module and the second EAM module are configured as a matched pair; wherein the first EAM module and the second EAM module are configured with characteristics within a match range of −25% to +25%.

3. The device of claim 1 wherein the first optical output or the second optical output is characterized by a frequency range between 10 GHz-50 GHz and a wavelength (A.) range between 1200 nm-1650 nm; wherein the first optical output or the second optical output is characterized by a data rate of greater than 10 Gbit/s.

4. The device of claim 1 wherein the first EAM module includes a monitor block coupled in series to a transimpedance amplifier (TIA).

5. The device of claim 4 wherein the TIA has a bandwidth of 2f-4f with f being a dither frequency.

6. The device of claim 4 further comprising a bandpass filter.

7. The device of claim 6 wherein the bandpass filter is at 2kf with k being a positive integer.

8. The device of claim 1 wherein the substrate member includes an interface comprising:

a modulator bias voltage input;

a laser DC bias current input;

a photo current or set output;

a power monitor current/voltage output;

a photo detector bias input;

a heater current/voltage input;

a photo current from input signal or set output, and

a wavelength monitor voltage/current/resistance output.

9. The device of claim 1 ,

wherein the electrical driver circuit is a differential electrical driver circuit, and

wherein the first driver output and the second driver output comprise a differential output pair.

10. The device of claim 1 , further comprising:

a beam splitter module having a first optical output coupled to an optical input of the first EAM module and a second optical output coupled to an optical input of the second EAM module.

11. The device of claim 1 wherein the first broadband source has no optical feedback.