IP Library Granted Patent US 10,768,485
Granted Patent B2
US 10,768,485 · App. 16/026,791 · Granted Sep 8, 2020

Quantum dot architectures for color filter applications

Inventors: Nigel L. Pickett (Manchester, GB); James Harris (Manchester, GB); Margaret Hines (Berkley, CA); Joseph Taylor (Manchester, GB)
Assignee: Nanoco Technologies Ltd.
G02F1/133617C01B25/087C09K11/025C09K11/565C09K11/70C09K11/703C09K11/883B82Y20/00B82Y40/00G02F2202/36
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,768,485
App. No.
16/026,791
Granted
Sep 8, 2020
Kind
B2
Abstract

Organically capped quantum dots are made by functionalizing the surfaces of QDs of various architectures with a combination of 6-mercaptohexanol (MCH) and 2-[2-(2-methoxyethoxy)-ethoxy]-acetic acid (MEEAA). Such MCH/MEEAA-capped QDs exhibit improved compatibility with solvents used in the fabrication of QD-containing films of light emitting devices, such as liquid crystal displays.

Claims (26)

1. A quantum dot comprising:

a core comprising indium and having a first band gap;

a first layer substantially surrounding the core and comprising a first metal chalcogenide having a second band gap that is greater than the first band gap; and

a second layer on the first layer comprising a second metal chalcogenide having a third band gap that is greater than the second band gap,

wherein the first layer comprises three or more monolayers and less than or equal to fifteen monolayers of the first metal chalcogenide.

2. The quantum dot recited in claim 1 wherein the quantum dot has a dot-in-rod architecture.

3. The quantum dot recited in claim 2 wherein the core is displaced longitudinally from the center of the dot-in-rod architecture.

4. The quantum dot recited in claim 1 wherein the core additionally comprises phosphorus.

5. The quantum dot recited in claim 1 wherein the core comprises alloyed or doped derivatives of InP.

6. The quantum dot recited in claim 5 wherein the core comprises InPZnS.

7. The quantum dot recited in claim 5 wherein the core comprises InPZnSeS.

8. The quantum dot recited in claim 1 wherein the each of the first and second metal chalcogenides are any one of ZnS, ZnSe, ZnSeS and ZnO.

9. A liquid crystal display (LCD) comprising:

a source of light in the blue portion of the visible spectrum;

a color filter array in optical communication with the source of blue light and containing a plurality of quantum dots according to claim 1 .

10. A quantum dot quantum well semiconductor nanoparticle comprising:

a core comprising a first metal chalcogenide having a first band gap;

a first layer substantially surrounding the core and comprising indium and having a second band gap that is less than the first band gap;

a second layer substantially surrounding the first layer and comprising a second metal chalcogenide and having a third band gap substantially equal to the first band gap;

a third layer substantially surrounding the second layer and comprising a third metal chalcogenide having a third band gap that is greater than the first band gap and the second band gap,

wherein the second layer comprises three or more monolayers and less than or equal to fifteen monolayers of the first metal chalcogenide.

11. The quantum dot quantum well semiconductor nanoparticle recited in claim 10 wherein the first metal chalcogenide and the second metal chalcogenide are different metal chalcogenides.

12. The quantum dot-quantum well semiconductor nanoparticle recited in claim 10 wherein the first metal chalcogenide and the third metal chalcogenide are the same metal chalcogenide.

13. A liquid crystal display (LCD) comprising:

a source of light in the blue portion of the visible spectrum;

a color filter array in optical communication with the source of blue light and containing a plurality of quantum dot-quantum well semiconductor nanoparticles according to claim 10 .

Assignments (3)
CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNEE PREVIOUSLY RECORDED ON REEL 062977 FRAME 0157. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT OF ASSIGNORS INTEREST. Recorded Jul 13, 2023
From: NANOCO TECHNOLOGIES LTD
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 064273/0340 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 7, 2023
From: NANOCO TECHNOLOGIES LTD
To: SAMSUNG ELECTRONICS CO. LTD
Reel/Frame 062977/0157 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 21, 2019
From: PICKETT, NIGEL L.; HARRIS, JAMES; HINES, MARGARET; TAYLOR, JOSEPH
To: NANOCO TECHNOLOGIES LTD.
Reel/Frame 050120/0060 →
Continuity (2)
Provisional Application 62528823 · Jul 5, 2017
Related Publication 20190011782A1 · Jan 10, 2019