Memory devices with three-dimensional structure
A memory device includes a substrate, a first memory structure including a plurality of first word lines stacked on the substrate in a direction perpendicular to a top surface of the substrate, an inter-metal layer on the first memory structure and including a plurality of intermediate pads connected with separate, respective first word lines of the plurality of first word lines, a second memory structure including a plurality of second word lines stacked on the inter-metal layer in the direction perpendicular to the top surface of the substrate, and an upper metal layer on the second memory structure and including a plurality of upper pads connected with separate, respective second word lines of the plurality of second word lines.
1. A memory device, comprising:
a substrate;
a first memory structure directly on the substrate such that the first memory structure is in contact with the substrate, the first memory structure including a plurality of first word lines stacked on the substrate in a direction perpendicular to a top surface of the substrate;
an inter-metal layer directly on the first memory structure such that the inter-metal layer is in contact with the first memory structure, the inter-metal layer including a plurality of intermediate pads, the plurality of intermediate pads connected with separate, respective first word lines of the plurality of first word lines;
a second memory structure directly on the inter-metal layer such that the second memory structure is in contact with the inter-metal layer and the inter-metal layer is directly between the first and second memory structures, the second memory structure including a plurality of second word lines stacked on the inter-metal layer in the direction perpendicular to the top surface of the substrate; and
an upper metal layer directly on the second memory structure such that the upper metal layer is in contact with the second memory structure and the second memory structure is directly between the upper metal layer and the inter-metal layer, the upper metal layer including a plurality of upper pads, the plurality of upper pads connected with separate, respective second word lines of the plurality of second word lines,
wherein,
the first memory structure further includes a first pillar penetrating the plurality of first word lines,
the second memory structure further includes a second pillar penetrating the plurality of second word lines,
the inter-metal layer further includes an intermediate connection pad configured to electrically couple the first pillar and the second pillar to each other, and
the upper metal layer further includes a bit line electrically coupled to the second pillar.
2. The memory device of claim 1 , wherein
the inter-metal layer further includes a plurality of intermediate conductive lines, the plurality of intermediate conductive lines connected with separate, respective intermediate pads of the plurality of intermediate pads, and
the upper metal layer further includes a plurality of upper conductive lines, the plurality of upper conductive lines connected with separate, respective upper pads of the plurality of upper pads.
3. The memory device of claim 2 , further comprising:
a peripheral circuit connected with both the plurality of intermediate conductive lines and the plurality of upper conductive lines.
4. The memory device of claim 2 , wherein the inter-metal layer further includes an additional conductive line, the additional conductive line connected with one upper conductive line of the plurality of upper conductive lines.
5. The memory device of claim 1 , wherein
the first memory structure further includes a plurality of first contact plugs, the plurality of first contact plugs configured to electrically couple separate, respective first word lines of the plurality of first word lines to separate, respective intermediate pads of the plurality of intermediate pads; and
the second memory structure further includes a plurality of second contact plugs, the plurality of second contact plugs configured to electrically couple separate, respective second word lines of the plurality of second word lines to separate, respective upper pads of the plurality of upper pads.
6. The memory device of claim 5 , wherein
each memory structure of the first and second memory structures includes a first contact region, a second contact region, and a core region, the first contact region on a first side of the core region and the second contact region on a second side of the core region, the second side is opposite to the first side, and
the plurality of first contact plugs are in the first contact region of the first memory structure and the plurality of second contact plugs are in the second contact region of the second memory structure.
7. The memory device of claim 1 , wherein
the first memory structure further includes a ground selection line, and
the upper metal layer further includes an additional upper pad connected with the ground selection line.
8. A memory device, comprising:
a substrate;
a first memory structure directly on the substrate such that the first memory structure is in contact with the substrate, the first memory structure including
a plurality of first word lines stacked on the substrate in a direction perpendicular to a top surface of the substrate, and
a plurality of first pillars penetrating the plurality of first word lines on the substrate;
an inter-metal layer directly on the first memory structure such that the inter-metal layer is in contact with the first memory structure, the inter-metal layer including
a plurality of intermediate pads, the plurality of intermediate pads connected with separate, respective first word lines of the plurality of first word lines, and
a plurality of intermediate connection pads, the plurality of intermediate connection pads connected with separate, respective first pillars of the plurality of first pillars;
a second memory structure directly on the inter-metal layer such that the second memory structure is in contact with the inter-metal layer and the inter-metal layer is directly between the first and second memory structures, the second memory structure including
a plurality of second word lines stacked on the inter-metal layer in the direction perpendicular to the top surface of the substrate, and
a plurality of second pillars penetrating the plurality of second word lines on the inter-metal layer, the plurality of second pillars connected with separate, respective intermediate connection pads of the plurality of intermediate connection pads; and
an upper metal layer directly on the second memory structure such that the upper metal layer is in contact with the second memory structure and the second memory structure is directly between the upper metal layer and the inter-metal layer, the upper metal layer including a plurality of upper pads, the plurality of upper pads connected with separate, respective second word lines of the plurality of second word lines,
wherein the upper metal layer further includes a plurality of bit lines electrically coupled to separate, respective second pillars of the plurality of second pillars.
9. The memory device of claim 8 , wherein
the inter-metal layer further includes a plurality of intermediate conductive lines connected with separate, respective intermediate pads of the plurality of intermediate pads, and
the upper metal layer further includes a plurality of upper conductive lines connected with separate, respective upper pads of the plurality of upper pads.
10. The memory device of claim 9 , further comprising:
a peripheral circuit connected with both the plurality of intermediate conductive lines and the plurality of upper conductive lines.