Methods of fabricating a polycrystalline diamond compact

1. A method of fabricating a polycrystalline diamond compact, the method comprising:

disposing at least one material adjacent to a polycrystalline diamond table, the at least one material including phosphorous and the polycrystalline diamond table including:

an upper surface;

an interfacial surface;

at least one side surface extending between the upper surface and the interfacial surface; and

at least one Group VIII metal disposed within interstitial regions between bonded diamond grains in the polycrystalline diamond table;

at least partially alloying the at least one Group VIII metal with the phosphorous to form an alloy that includes at least one intermediate compound including the at least one Group VIII metal and the phosphorous, the at least partially alloying effective to cause the polycrystalline diamond table to include:

a first region extending inwardly from an upper surface and the at least one side surface that includes the at least one intermediate compound therein, the phosphorous being distributed non-uniformly throughout the first region of the polycrystalline diamond table; and

a second region extending inwardly from the interfacial surface that is free of phosphorous.

2. The method of claim 1 , wherein at least partially alloying the at least one Group VIII metal with the phosphorous includes subjecting the polycrystalline diamond table and the at least one material to a heating process effective to at least partially alloy the at least one Group VIII metal with the phosphorous to form the alloy.

3. The method of claim 1 , wherein disposing at least one material adjacent to a polycrystalline diamond table includes disposing a layer of the at least one material adjacent to at least a portion of one or more of the upper surface or the at least one side surface.

4. The method of claim 1 , wherein at least partially alloying the at least one Group VIII metal with the phosphorous to form an alloy that includes at least one intermediate compound including the at least one Group VIII metal and the phosphorous includes infiltrating the first region with the alloy.

5. The method of claim 1 , further comprising leaching a region of the polycrystalline diamond table to a depth of at least about 250 μm from one or more of the upper surface or the at least one side surface prior to at least partially alloying the at least one Group VIII metal with the phosphorous.

6. The method of claim 1 , further comprising:

disposing at least another material adjacent to the polycrystalline diamond table; and

wherein at least partially alloying the at least one Group VIII metal with the phosphorous to form an alloy includes forming another alloy including at least another intermediate compound.

7. The method of claim 1 , wherein at least partially alloying the at least one Group VIII metal with the phosphorous to form an alloy includes subjecting the polycrystalline diamond table and the at least one material to a high-temperature/high-pressure process.

8. The method of claim 1 , wherein at least partially alloying the at least one Group VIII metal with the phosphorous to form an alloy includes subjecting the polycrystalline diamond table and the at least one material to a heating process at ambient pressure.

9. A method of fabricating a polycrystalline diamond compact, the method comprising:

providing an assembly including:

a substrate; and

a polycrystalline diamond table bonded to the substrate, the polycrystalline diamond table including:

a plurality of bonded diamond grains defining a plurality of interstitial regions, at least a portion of the plurality of interstitial regions having at least one Group VIII metal including at least cobalt disposed therein;

an upper surface;

at least one side surface;

an interfacial surface bonded to the substrate; and

a chamfer extending between the at least one side surface and the upper surface;

positioning a layer including the at least one material adjacent to at least a portion of one or more of the upper surface or the at least one side surface, the at least one material including phosphorous; and

subjecting the assembly and the layer to a heating process effective to at least partially alloy the at least one Group VIII metal with the phosphorous to form an alloy that includes at least one intermediate compound including the at least one Group VIII metal and the phosphorous, the polycrystalline diamond table including a first region extending inwardly from the upper surface and the at least one side surface that includes the at least one intermediate compound distributed non-uniformly throughout the first region of the polycrystalline diamond table.

10. The method of claim 9 , wherein the polycrystalline diamond table includes a second region extending inwardly from the interfacial surface that is free of phosphorous.

11. The method of claim 9 wherein providing an assembly includes positioning a layer including the at least one material adjacent to at least a portion of one or more of the upper surface or the at least one side surface.

12. The method of claim 9 wherein providing an assembly includes positioning the layer including the at least one material adjacent to more than about 50% of the surface area of one or more of the upper surface or the at least one side surface.

13. The method of claim 9 , further comprising leaching a region of the polycrystalline diamond table to a depth of at least about 250 μm from one or more of the upper surface or the at least one side surface.

14. The method of claim 13 , wherein leaching occurs prior to subjecting the assembly to a heating process.

15. The method of claim 13 , wherein leaching a region of the polycrystalline diamond table removes at least some of the alloy.

16. The method of claim 9 , wherein:

the assembly includes at least another material adjacent to the polycrystalline diamond table; and

subjecting the assembly to a heating process includes forming another alloy including at least another intermediate compound.

17. The method of claim 9 , wherein subjecting the assembly to a heating process includes subjecting the assembly to a high-temperature/high-pressure process.

18. The method of claim 9 wherein subjecting the assembly to a heating process is performed at ambient pressure.

19. A method of fabricating a polycrystalline diamond compact, the method comprising:

disposing at least one material adjacent to a polycrystalline diamond table, the at least one material including phosphorous, the polycrystalline diamond table including an upper surface, an interfacial surface, at least one side surface, a chamfer extending between the at least one side surface and the upper surface, and at least one Group VIII metal disposed within interstitial regions between bonded diamond grains in the polycrystalline diamond table;

at least partially alloying the at least one Group VIII metal with the phosphorous to form an alloy that includes at least one intermediate compound including Co 2 P, the at least partially alloying is effective to form:

a first region of the polycrystalline diamond table extending inwardly from an upper surface and the at least one side surface that includes the at least one intermediate compound therein, the phosphorous being distributed non-uniformly throughout at least the first region; and

a second region of the polycrystalline diamond table extending inwardly from the interfacial surface that is free of phosphorous.

20. The method of claim 19 , wherein the at least one intermediate compound is distributed non-uniformly throughout the first region.