Light-emitting device
A light-emitting device includes a first semiconductor layer; a plurality of semiconductor pillars separated from each other and formed on the first semiconductor layer, the plurality of semiconductor pillars respectively includes a second semiconductor layer and an active layer; a first electrode covering one portion of the plurality of semiconductor pillars; and a second electrode covering another portion of the plurality of semiconductor pillars, wherein the plurality of semiconductor pillars under a covering region of the first electrode are separated from each other by a first space, the plurality of semiconductor pillars outside the covering region of the first electrode are separated from each other by a second space, and the first space is larger than the second space.
1. A light-emitting device, comprising:
a first semiconductor layer;
a plurality of semiconductor pillars separated from each other and formed on the first semiconductor layer, the plurality of semiconductor pillars each comprising a second semiconductor layer and an active layer;
a first contact layer formed on the first semiconductor layer;
a plurality of second contact layers respectively formed on the plurality of semiconductor pillars;
a first electrode contact layer formed on the first contact layer;
a second electrode contact layer covering the plurality of second contact layers;
a first electrode covering a first group of semiconductor pillars in the plurality of semiconductor pillars; and
a second electrode covering a second group of semiconductor pillars in the plurality of semiconductor pillars, wherein a first spacing separates the semiconductor pillars of the first group in the plurality of semiconductor pillars which are under a region covered by the first electrode from each other, a second spacing separates the semiconductor pillars of the second group in the plurality of semiconductor pillars which are outside of the region covered by the first electrode from each other, and the first spacing is larger than the second spacing, wherein the first contact layer is covered by the first electrode and the second electrode.
2. The light-emitting device according to claim 1 , wherein the first contact layer and the plurality of second contact layers do not overlap each other.
3. The light-emitting device according to claim 1 , wherein the first contact layer comprises a first contact portion and a plurality of first extending portions connected to each other.
4. The light-emitting device according to claim 3 , wherein the first contact portion comprises a projected area on the first semiconductor layer that is larger than a projected area of one of the plurality of semiconductor pillars on the first semiconductor layer.
5. The light-emitting device according to claim 3 , further comprising a first insulating layer comprising a first opening exposing the first contact portion, wherein the first insulating layer covers the plurality of first extending portions.
6. The light-emitting device according to claim 1 , wherein the first contact layer comprises a plurality of first contact portions and a plurality of first extending portions connected to each other.
7. The light-emitting device according to claim 6 , wherein one of the plurality of first contact portions of the first contact layer comprises a width larger than a width of one of the plurality of first extending portions.
8. The light-emitting device according to claim 6 , wherein the plurality of first contact portions is covered by the first electrode and the second electrode.
9. The light-emitting device according to claim 1 , further comprising a first insulating layer comprising a plurality of second openings respectively formed on the plurality of second contact layers.
10. The light-emitting device according to claim 1 , wherein the second electrode contact layer surrounds multiple sidewalls of the first electrode contact layer.
11. The light-emitting device according to claim 1 , wherein the first electrode contact layer comprises a width larger than a width of one of the plurality of semiconductor pillars.
12. The light-emitting device according to claim 1 , wherein the first contact layer comprises a width larger than a width of one of the plurality of semiconductor pillars.
13. The light-emitting device according to claim 1 , wherein the first electrode contact layer and the second electrode contact layer are covered by the first electrode.
14. The light-emitting device according to claim 13 , further comprising a second insulating layer comprising a first opening formed on the first electrode contact layer, and the first electrode contacting the first electrode contact layer through the first opening.
15. The light-emitting device according to claim 1 , wherein the second semiconductor layer comprises a sidewall separated from a sidewall of the active layer.
16. The light-emitting device according to claim 15 , wherein a surface of the active layer is not covered by the second semiconductor layer.
17. The light-emitting device according to claim 1 , wherein the plurality of second contact layers comprises a transparent conductive material.
18. The light-emitting device according to claim 17 , wherein the first contact layer comprises a metal material.