Optical dielectric waveguide structures
An optical subassembly includes a planar dielectric waveguide structure that is deposited at temperatures below 400 C. The waveguide provides low film stress and low optical signal loss. Optical and electrical devices mounted onto the subassembly are aligned to planar optical waveguides using alignment marks and stops. Optical signals are delivered to the submount assembly via optical fibers. The dielectric stack structure used to fabricate the waveguide provides cavity walls that produce a cavity, within which optical, optoelectronic, and electronic devices can be mounted. The dielectric stack is deposited on an interconnect layer on a substrate, and the intermetal dielectric can contain thermally conductive dielectric layers to provide pathways for heat dissipation from heat generating optoelectronic devices such as lasers.
1. A waveguide comprising
a substrate wherein a functionality of the substrate is susceptible to be degraded at temperatures greater than 400 C;
a buffer layer comprising SiON on the substrate,
wherein the buffer layer is thicker than or equal to 4 microns,
wherein the buffer layer comprises an index of refraction between 1.445 and 1.55;
a repeated stack of two or more SiON layers on the buffer layer, wherein the two or more layers comprise at least two layers having different indexes of refraction,
wherein the buffer layer and the layers of the repeated stack are formed by a deposition process at a temperature less than or equal to 400 C.
2. A waveguide as in claim 1
wherein the substrate comprises a material or an element that has a property changed at temperatures greater than 400 C, or
wherein the substrate comprises an interconnect layer that is susceptible to be damaged at temperatures greater than 400 C.
3. A waveguide as in claim 1
wherein the substrate comprises a device fabricated thereon,
wherein the device or a connection element connected to the device is susceptible to be damaged at temperatures greater than 400 C.
4. A waveguide as in claim 1
wherein each layer of the buffer layer and the layers of the repeated stack comprises a stoichiometry of Si, O, and N to provide a stress having a magnitude less than or equal to 20 MPa.
5. A waveguide as in claim 1
wherein each layer of the buffer layer and the layers of the repeated stack comprises a level of impurity or a level of homogeneity to provide an optical loss less than or equal to 1 dB/cm.
6. A waveguide as in claim 1
wherein a patterning of the buffer layer and the repeated stack comprises a level of uniformity to provide an optical loss less than or equal to 1 dB/cm.
7. A waveguide comprising
a substrate wherein a functionality of the substrate is susceptible to be degraded at temperatures greater than 400 C;
a buffer layer comprising SiON on the substrate;
a repeated stack of two or more SiON layers on the buffer layer, wherein the two or more layers comprise at least two layers having different indexes of refraction,
wherein the repeated stack comprises 9 repeated pairs of SiON layers,
wherein each pair of SiON comprises a SiON layer having a thickness of 50 nm and a refractive index of 1.7 on a SiON layer having a thickness of 900 nm a refractive index of 1.6,
wherein the buffer layer and the layers of the repeated stack are formed by a deposition process at a temperature less than or equal to 400 C.
8. A waveguide as in claim 7
wherein each layer of the buffer layer and the layers of the repeated stack comprises a stoichiometry of Si, O, and N to provide a stress having a magnitude less than or equal to 20 MPa.
9. A waveguide comprising
a substrate wherein a functionality of the substrate is susceptible to be degraded at temperatures greater than 400 C;
a buffer layer comprising SiON on the substrate;
a repeated stack of two or more SiON layers on the buffer layer, wherein the two or more layers comprise at least two layers having different indexes of refraction,
wherein the repeated stack comprises 10 repeated pairs of SiON layers,
wherein each pair of SiON comprises a SiON layer having a thickness of 500 nm and a refractive index of 1.65 on a SiON layer having a thickness of 40 nm and a refractive index of 1.7,
wherein the buffer layer and the layers of the repeated stack are formed by a deposition process at a temperature less than or equal to 400 C.
10. A waveguide as in claim 9
wherein each layer of the buffer layer and the layers of the repeated stack comprises a stoichiometry of Si, O, and N to provide a stress having a magnitude less than or equal to 20 MPa.
11. A waveguide comprising
a substrate wherein a functionality of the substrate is susceptible to be degraded at temperatures greater than 400 C;
a buffer layer comprising SiON on the substrate;
a repeated stack of two or more SiON layers on the buffer layer, wherein the two or more layers comprise at least two layers having different indexes of refraction,
wherein the repeated stack comprises 13 repeated pairs of SiON layers,
wherein each pair of SiON comprises a SiON layer having a thickness of 500 nm and a refractive index of 1.65 on a SiON layer having a thickness of 60 nm and a refractive index of 1.7,
wherein the buffer layer and the layers of the repeated stack are formed by a deposition process at a temperature less than or equal to 400 C.
12. A waveguide as in claim 11
wherein each layer of the buffer layer and the layers of the repeated stack comprises a stoichiometry of Si, O, and N to provide a stress having a magnitude less than or equal to 20 MPa.
13. A waveguide comprising
a substrate wherein a functionality of the substrate is susceptible to be degraded at temperatures greater than 400 C;
a buffer layer comprising SiON on the substrate;
one or more bottom spacer layers disposed on the buffer layer,
wherein the one or more bottom spacer layers comprise one or more SiON layers having a thickness of 500 nm and refractive index between 1.55 and 1.65;
a repeated stack of two or more SiON layers on the buffer layer, wherein the two or more layers comprise at least two layers having different indexes of refraction,
wherein the buffer layer and the layers of the repeated stack are formed by a deposition process at a temperature less than or equal to 400 C.
14. A waveguide as in claim 13
wherein each layer of the buffer layer and the layers of the repeated stack comprises a level of impurity or a level of homogeneity to provide an optical loss less than or equal to 1 dB/cm.
15. A waveguide comprising
a substrate wherein a functionality of the substrate is susceptible to be degraded at temperatures greater than 400 C;
a buffer layer comprising SiON on the substrate;
a repeated stack of two or more SiON layers on the buffer layer, wherein the two or more layers comprise at least two layers having different indexes of refraction;
one or more top spacer layers disposed on the repeated stack,
wherein the one or more top spacer layers comprise one or more SiON layers having a thickness between 500 nm and 850 nm and a refractive index between 1.55 and 1.7,
wherein the buffer layer and the layers of the repeated stack are formed by a deposition process at a temperature less than or equal to 400 C.
16. A waveguide comprising
a substrate wherein a functionality of the substrate is susceptible to be degraded at temperatures greater than 400 C;
a buffer layer comprising SiON on the substrate;
a repeated stack of two or more SiON layers on the buffer layer, wherein the two or more layers comprise at least two layers having different indexes of refraction,
a top layer disposed on the repeated stack,
wherein the top layer comprises a SiON layer having a thickness of 200 nm and refractive index of 1.445,
wherein the buffer layer and the layers of the repeated stack are formed by a deposition process at a temperature less than or equal to 400 C.