IP Library Granted Patent US 10,426,577
Granted Patent B2
US 10,426,577 · App. 16/036,537 · Granted Oct 1, 2019

Surface treatment for an implant surface

Inventors: Daniel Mandanici (Loxahatchee, FL); Zachary B. Suttin (West Palm Beach, FL); Keng-Min Lin (San Mateo, CA); Olga S. Sanchez (Wellington, FL)
Assignee: Biomet 3I, LLC
A61C8/0015A61C8/0075A61C13/0007A61C13/0012A61C8/006A61C8/0022A61C8/0062A61C2008/0046
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Quick Facts
Patent No.
US 10,426,577
App. No.
16/036,537
Granted
Oct 1, 2019
Kind
B2
Abstract

An implant system and a method of forming the implant system including an implant to be implanted into living bone. The implant includes titanium. The implant includes a first surface geometry on a first portion of a surface of the implant and a second surface geometry on a second portion of the surface of the implant. The first surface geometry includes at least a submicron topography including tube-like structures and the second surface geometry includes a first micro-scale topography, a second micro-scale topography superimposed on the first topography, and a submicron topography superimposed on the first and second micro-scale topographies, the submicron topography including the tube-like structures.

Claims (37)

1. An implant system including an implant to be implanted into living bone, the implant being formed of a material comprising titanium, the implant comprising:

a first surface geometry on a first portion of a surface of the implant, the first surface geometry including:

a first submicron topography including tube-like structures; and

a second surface geometry on a second portion of the surface of the implant, the second surface geometry including:

a first micro-scale topography;

a second micro-scale topography superimposed on the first topography, the second micro-scale topography being generally less coarse than the first micro-scale topography; and

a second submicron topography superimposed on the first and second micro-scale topographies, the submicron topography including the tube-like structures.

2. The implant system of claim 1 , wherein the tube-like structures have heights in the range of about 200 nanometers to about 400 nanometers.

3. The implant system of claim 1 , wherein the tube-like structures have diameters in the range of about 10 to about 400 nanometers.

4. The implant system of claim 1 , wherein the tube-like structures are formed from titanium dioxide.

5. The implant system of claim 1 , wherein the first micro-scale topography includes peak-to-valley heights of about 1 microns to about 30 microns.

6. The implant system of claim 5 , wherein the first micro-scale topography includes peak-to-valley heights of about 10 microns to about 20 microns.

7. The implant system of claim 5 , wherein the second micro-scale topography includes peak-to-valley heights of less than about 10 microns and peak-to-peak distances of less than about 3 microns.

8. The implant system of claim 7 , wherein the first surface geometry on the first portion of the surface of the implant includes a third micro-scale topography, wherein the first submicron topography is superimposed on the third micro-scale topography.

9. The implant system of claim 8 , wherein third micro-scale topography includes peak-to-valley heights of less than about 10 microns and peak-to-peak distances of less than about 3 microns.

10. The implant system of claim 8 , wherein the first surface geometry on the first portion of the surface of the implant includes a fourth micro-scale topography, wherein the third micro-scale topography is superimposed on the fourth micro-scale topography.

11. The implant system of claim 10 , wherein the fourth micro-scale topography is generally less coarse than the first micro-scale topography.

12. The implant system of claim 1 , wherein the first surface topography extends from a coronal end of the implant to an intermediate point.

13. The implant system of claim 1 , wherein the first surface topography extends along about fifty percent or less of a length of the implant.

14. The implant system of claim 1 , wherein the second surface topography extends from the intermediate point toward an apical end of the implant.

15. The implant system of claim 1 , wherein the implant system further includes:

a mating component configured to be coupled with the implant, the abutment including a third surface topography including one of:

a fourth submicron topography including the tube-like structures; and

a fifth micro-scale topography superimposed on fourth submicron topography.

16. A method of forming an implant system including an implant to be implanted into living bone, the implant being formed of a material comprising titanium, the method comprising:

forming a first surface geometry on a first portion of a surface of the implant, including:

adding a first submicron topography to the first portion of the surface of the implant, the first submicron topography including tube-like structures;

forming a second surface geometry on a second portion of the surface of the implant, including

deforming the second portion of the surface of the implant to produce a first micro-scale topography;

removing a portion of the second portion of the surface to produce a second micro-scale topography superimposed on the first micro-scale topography, the second micro-scale topography, being generally less coarse than the first micro-scale topography; and

adding a second submicron topography superimposed on the first and second micro-scale topographies, the second submicron topography including the tube-like structures.

17. The method of claim 16 , wherein the deforming the implant surface to produce the first micro-scale topography includes grit blasting the surface.

18. The method of claim 16 , wherein the removing the portion of the second portion of the surface to produce the second micro-scale topography includes:

removing a native oxide layer from the implant surface; and

acid etching the resulting surface.

19. The method of claim 16 , wherein the tube-like structures have heights in the range of about 200 nanometers to about 400 nanometers and have diameters in the range of about 10 to about 400 nanometers, wherein the first micro-scale topography includes peak-to-valley heights of about 10 microns to about 20 microns, and wherein the second micro-scale topography includes peak-to-valley heights of less than about 10 microns and peak-to-peak distances of less than about 3 microns.

20. The method of claim 16 , wherein the adding the first submicron topography and the adding the second submicron topography includes potentiostatic anodization.

Assignments (4)
RELEASE OF SECURITY INTEREST Recorded Oct 20, 2025
From: JPMORGAN CHASE BANK, N.A.
To: BIOMET 3I, LLC; ZIMMER DENTAL INC.
Reel/Frame 073142/0312 →
SECURITY INTEREST Recorded Oct 20, 2025
From: BIOMET 3I, LLC; ZIMMER DENTAL INC.; IMPLANT CONCIERGE, LLC
To: GOLUB CAPITAL LLC, AS COLLATERAL AGENT
Reel/Frame 073142/0384 →
SECURITY INTEREST Recorded Mar 2, 2022
From: BIOMET 3I, LLC; EBI, LLC; ZIMMER BIOMET SPINE, INC.; ZIMMER DENTAL INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 059293/0213 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 18, 2019
From: MANDANICI, DANIEL; SUTTIN, ZACHARY B; LIN, KENG-MIN; SANCHEZ, OLGA S
To: BIOMET 3I, LLC
Reel/Frame 048054/0753 →
Continuity (3)
Continuation In Part 15233553 · Aug 10, 2016
Provisional Application 62203733 · Aug 11, 2015
Related Publication 20180318049A1 · Nov 8, 2018
Cited By (2)
US 12,251,312 US 12,582,507