Electrode defined resonator

1. A bulk acoustic resonator comprising:

a resonator body including:

a piezoelectric layer having a thickness;

a device layer; and

a top conductive layer on the piezoelectric layer opposite the device layer and having a plurality of first conductive lines or fingers that are spaced from each other by a pitch,

wherein substantially all of a first surface of the device layer opposite the piezoelectric layer is used for mounting the resonator body to adjacent a carrier that is separate from the resonator body; and

wherein the resonator body is configured to resonate in composite mode resonance, the composite mode resonance being a combination of thickness mode resonance defined by the thickness and lateral mode resonance defined by the pitch.

2. The bulk acoustic resonator of claim 1 , wherein all of the first surface of the device layer opposite the piezoelectric layer is used for mounting the entirety of the resonator body to the carrier.

3. The bulk acoustic resonator of claim 1 , further comprising a connecting structure configured to conduct electrical signals to the top conductive layer.

4. The bulk acoustic resonator of claim 3 , wherein the connecting structure is disposed next to the resonator body and is integral with or formed from the same materials as the layers of the resonator body.

5. The bulk acoustic resonator of claim 4 , wherein the connecting structure comprises a conductive via configured to conduct electrical signals to the bottom conductive layer.

6. The bulk acoustic resonator of claim 1 , wherein the device layer comprises diamond.

7. The bulk acoustic resonator of claim 1 , wherein the resonator body further comprises a bottom conductive layer between the piezoelectric layer and the device layer.

8. The bulk acoustic resonator of claim 7 , wherein the bottom conductive layer comprises a plurality of second conductive lines spaced from each other or comprises a conductive sheet.

9. The bulk acoustic resonator of claim 1 , wherein the lateral mode resonance is >20% of the composite mode resonance.

10. The bulk acoustic resonator of claim 1 , wherein the first surface of the device layer facing the carrier is used for mounting in its entirety directly to the carrier.

11. The bulk acoustic resonator of claim 1 , wherein the resonator body further comprises at least one temperature compensation layer positioned:

on the top conductive layer opposite the piezoelectric layer; or

between the piezoelectric layer and the device layer.

12. The bulk acoustic resonator of claim 1 , wherein:

the resonator body further comprises a substrate attached to the device layer opposite the piezoelectric layer;

the first surface of the device layer is mounted in its entirety to the substrate; and

a second surface of the substrate facing the carrier is used for mounting the resonator body to the carrier.

13. The bulk acoustic resonator of claim 12 , wherein the first surface of the device layer facing the carrier is mounted in its entirety directly to the substrate.

14. The bulk acoustic resonator of claim 12 , wherein the substrate comprises silicon.

15. The bulk acoustic resonator of claim 12 , wherein the resonator body further comprises at least one temperature compensation layer positioned:

on the top conductive layer opposite the piezoelectric layer;

between the piezoelectric layer and the device layer; or

between the device layer and the substrate.

16. The bulk acoustic resonator of claim 12 , wherein the resonator body further comprises:

another device layer between the substrate and the piezoelectric layer; or

another substrate between the substrate and the piezoelectric layer; or

both.

17. The bulk acoustic resonator of claim 12 , wherein:

the device layer has an acoustic impedance ≥60×10 6 Pa-s/m 3 ; and

the substrate has an acoustic impedance ≤60×10 6 Pa-s/m 3 .