High contrast far-field radiative thermal diode
View Patent ↗A far-field radiative thermal rectification device uses a phase change material to achieve a high degree of asymmetry in radiative heat transfer. The device has a multilayer structure on one side and a blackbody on other side. The multilayer structure can consist of a transparent thin film of KBr sandwiched between a thin film of VO 2 and a reflecting layer of gold. When VO 2 is in its insulating phase, the structure is highly reflective due to the two transparent layers on highly reflective gold. When VO 2 is in the metallic phase, Fabry-Perot type of resonance occurs and the tri-layer structure acts like a wide-angle antireflection coating achieved by destructive interference of partially reflected waves making it highly absorptive for majority of spectral range of thermal radiation. The instant structure can form the active part of a configuration that acts like a far-field radiative thermal diode.
1. A high-contrast thermal diode, comprising
a passive component; and
an active component comprising,
a substrate,
a first layer disposed above the substrate having a thickness of 1 μm;
a second opaque layer having a thickness in the range of approximately 25 nm to 2 μm;
a third layer comprising a phase change material having a thickness in the range of approximately 25 nm to 2 μm.
2. The thermal diode of claim 1 , wherein the phase change material of the third layer is one of VO 2 , La 0.7 Ca 0.15 Sr 0.15 MnO 3 (LCSMO), and AIST.
3. The thermal diode of claim 2 , where in the phase change material of the third layer is VO 2 .
4. The thermal diode of claim 1 , wherein the second opaque layer is one of KBr, BaF 2 , GdF 3 , BiF 3 , ZnSe, ZnS, Si, GaAs, and Ge.
5. The thermal diode of claim 4 , wherein the second opaque layer is KBr.
6. The thermal diode of claim 1 , wherein the first layer is one of Au, Ag, Al, Pt-Rd, and Cu.
7. The thermal diode of claim 6 , wherein the first layer is Au.
8. The thermal diode of claim 1 , wherein the second opaque layer has a thickness of 880 nm.
9. The thermal diode of claim 8 , wherein the third layer has a thickness of 25 nm.
10. The thermal diode of claim 1 , wherein the third layer is configured to be in a metallic phase where the active component has a high emissivity.
11. The thermal diode of claim 10 , wherein when the third layer configured to be in an insulating phase where the active component has a low emissivity in the broad spectrum.
12. The thermal diode of claim 1 , wherein the diode has a rectification ratio of approximately 11.3.
13. A far-field radiative thermal rectification device comprising,
a passive component; and
a multilayer structure disposed a distance from the passive component, the multilayer structure comprising,
a transparent thin film of KBr;
a thin film of VO 2 , and
a layer of gold,
wherein the thin film of VO 2 is disposed between the thin film of KBr and the layer of gold.
14. The device of claim 13 , wherein the VO 2 thin film is configured to have at least an insulating phase and a metallic phase.
15. The device of claim 14 , wherein when the VO 2 thin film is in the insulating phase, the multilayer structure is highly reflective.
16. The device of claim 14 , wherein when VO 2 is in the metallic phase, a Fabry-Perot type of resonance occurs and the multilayer structure acts like a wide-angle antireflection coating having a high absorptive for a majority of spectral range of thermal radiation.
17. The device of claim 13 , wherein the device is configured as a far-field radiative thermal diode.
18. The device of claim 13 , wherein the device is configured to have a thermal rectification greater than 11 at a temperature bias of about 20 K.