IP Library Patent Application 16040173
Patent Application
App. No. 16/040,173

Integrated Vapor Transport Deposition Method and System

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Quick Facts
Patent No.
US None
App. No.
16/040,173
Abstract

A vapor transport deposition system and method that includes a vaporizer and distributor unit and at least one auxiliary process unit for integrating thin-film layer deposition with one or more pre- or post-deposition processes.

Claims (39)

1 . A method for manufacturing a photovoltaic device comprising:

depositing a thin film layer on a substrate using an integrated deposition apparatus; and

performing a first pre- or post-deposition process on the substrate using said integrated deposition apparatus.

2 . The method of claim 1 , wherein the step of depositing a thin film layer on a substrate further comprises:

vaporizing a material powder into a vapor;

collecting the vapor in a vapor distribution unit of said apparatus; and

outputting the vapor from the vapor distribution unit to be deposited onto the substrate.

3 . The method of claim 2 , wherein the step of performing a pre- or post-deposition process on the substrate further comprises performing a thermal heat treatment.

4 . The method of claim 2 , wherein the step of performing a pre- or post-deposition process on the substrate further comprises:

inputting a process material into a first auxiliary process unit of said apparatus; and

outputting the process material from the first auxiliary process unit towards a substrate.

5 . The method of claim 4 , wherein the step of collecting the vapor in the vapor distribution unit further comprises:

capturing the vapor from the vaporizer unit in a vapor housing; and

passing the vapor from the vapor housing to a chamber in the vapor distribution unit.

6 . The method of claim 5 , wherein the step of inputting a process material into a first auxiliary process unit further comprises:

inputting a process material from a material source into at least one inlet in the first auxiliary process unit;

capturing the process material in a manifold housing of the first auxiliary process unit; and

directing the process material towards an opening in the manifold housing.

7 . The method of claim 1 , wherein the step of performing a pre- or post-deposition process on the substrate comprising performing a pre-deposition process.

8 . The method of claim 7 , wherein the step of performing a pre-deposition process comprises forming an upstream inert gas curtain adjacent to the substrate to achieve local ambient control.

9 . The method of claim 7 , wherein the step of performing a pre-deposition process comprises performing a pre-deposition chemical treatment with a process gas.

10 . The method of claim 7 , wherein the step of performing a pre-deposition process comprises performing a pre-deposition thermal-chemical treatment with a process gas and radiant heat.

11 . The method of claim 7 , wherein the step of performing a pre-deposition process comprises performing a pre-deposition thermal treatment of the substrate with radiant heat and without gas flow.

12 . The method of claim 7 , wherein the step of performing a pre-deposition process comprises providing a vapor to form a material layer on the substrate.

13 . The method of claim 1 , wherein the step of performing a pre- or post-deposition process on the substrate comprising performing a post-deposition process.

14 . The method of claim 13 , wherein the step of performing a post-deposition process comprises forming an downstream inert gas curtain adjacent to the substrate to achieve local ambient control.

15 . The method of claim 13 , wherein the step of performing a post-deposition process comprises performing a post-deposition chemical treatment with a process gas.

16 . The method of claim 13 , wherein the step of performing a post-deposition process comprises performing a post-deposition thermal-chemical treatment with a process gas and radiant heat.

17 . The method of claim 13 , wherein the step of performing a post-deposition process comprises performing a post-deposition thermal treatment of the substrate with radiant heat and without gas flow.

18 . The method of claim 13 , wherein the step of performing a post-deposition process comprises providing a vapor to form a material layer on a deposited layer on the substrate.

19 . The method of claim 6 , further comprising:

performing a second pre- or post-deposition process on the substrate using said integrated deposition apparatus.

20 . The method of claim 19 , further comprising:

inputting a process material into a second auxiliary process unit of said apparatus; and

outputting the process material from the second auxiliary process unit towards the substrate.

21 . The method of claim 20 , further comprising:

directing the substrate under the first auxiliary process unit for a pre-deposition process;

after directing the substrate under the first auxiliary process unit, directing the substrate under the vapor distribution unit; and

after directing the substrate under the vapor distribution unit, directing the substrate under the second auxiliary process unit for a post deposition process.