Power transistor control signal gating

1. A half bridge GaN circuit, comprising:

a switch node;

a low side power switch connected to the switch node and configured to be selectively conductive according to one or more control signals;

a high side power switch connected to the switch node and configured to be selectively conductive according to the one or more control signals;

a low side power switch driver, configured to control the conductivity state of the low side power switch based on one or more of the control signals;

a high side power switch driver, configured to control the conductivity state of the high side power switch based on one or more of the control signals;

a controller configured to generate the one or more control signals; and

a high side slew detect circuit configured to prevent the high side power switch driver from causing the high side power switch to be conductive while the voltage at the switch node is increasing,

wherein the high side slew detect circuit comprises:

a capacitor connected to a drain of the high side power switch and to a sense node;

a clamp circuit connected to the sense node and to a source of the high side power switch, and configured to prevent a voltage at the sense node from becoming less than a minimum voltage and from becoming greater than a maximum voltage;

a bias circuit connected to the sense node; and

an output circuit having an input terminal connected to the sense node, wherein the output circuit is configured to generate a high side slew end signal based on the voltage at the sense node and a voltage at the source of the high side power switch,

wherein the capacitor and the bias circuit are configured to generate the voltage at the sense node corresponding with whether or not a voltage difference between a voltage at the drain of the high side power switch and the voltage at the source of the high side power switch is decreasing, and

wherein the bias circuit is configured to bias the sense node to a voltage which causes the output circuit to generate the high side slew end signal indicating that the difference between the voltage at the drain of the high side power switch and the voltage at the source of the high side power switch is not decreasing.

2. The half bridge GaN circuit of claim 1 , wherein the high side power switch driver is configured to receive a high side control signal from the controller, to receive the high side slew end signal from the high side slew detect circuit, and to control the conductivity state of the high side power switch based on both the high side control signal and the high side slew end signal.

3. The half bridge GaN circuit of claim 1 , wherein, in response to the difference between the voltage at the drain of the high side power switch and the voltage at the source of the high side power switch decreasing, the capacitor and the bias circuit are cooperatively configured to drive the sense node to a voltage which causes the output circuit to generate the high side slew end signal indicating that the difference between the voltage at the drain of the high side power switch and the voltage at the source of the high side power switch is decreasing.

4. The half bridge GaN circuit of claim 1 , wherein the output circuit comprises first and second signal paths, wherein the first path is configured to cause the high side slew end signal to indicate that the voltage difference is not decreasing and to cause the high side slew end signal to indicate that the voltage difference is decreasing, wherein the first path is configured to cause the high side slew end signal to indicate that the voltage difference is not decreasing quicker than the first path causes the high side slew end signal to indicate that the voltage difference is decreasing, wherein the second path is configured to cause the high side slew end signal to indicate that the voltage difference is decreasing and to cause the high side slew end signal to indicate that the voltage difference is not decreasing, and wherein the second path is configured to cause the high side slew end signal to indicate that the voltage difference is decreasing quicker than the first path causes the high side slew end signal to indicate that the voltage difference is not decreasing.

5. The half bridge GaN circuit of claim 1 , wherein the capacitor comprises:

a transistor structure, comprising:

a source electrode;

a gate electrode electrically connected to the source electrode;

a drain electrode; and

a field plate electrode,

wherein the drain electrode functions as a first plate electrode of the capacitor and the field plate electrode functions as a second plate electrode of the capacitor.

6. A slew detect circuit, comprising:

a capacitor connected to a first input and to a sense node;

a clamp circuit connected to the sense node and to a second input, and configured to prevent a voltage at the sense node from becoming less than a minimum voltage and from becoming greater than a maximum voltage;

a bias circuit connected to the sense node and to the second input; and

an output circuit having an input terminal connected to the sense node, wherein the output circuit is configured to generate a slew end signal based on the voltage at the sense node and a voltage at the second input,

wherein the capacitor and the bias circuit are configured to generate the voltage at the sense node corresponding with whether or not a voltage difference between a voltage at the first input and the voltage at the second input is decreasing,

wherein the bias circuit is configured to bias the sense node to a voltage which causes the output circuit to generate a slew end signal indicating that the difference between the voltage at the first input and the voltage at the second input is not decreasing, and

wherein, in response to the difference between the voltage at the first input and the voltage at the second input decreasing, the capacitor and the bias circuit are cooperatively configured to drive the sense node to a voltage which causes the output circuit to generate the slew end signal indicating that the difference between the voltage at the first input and the voltage at the second input is decreasing.

7. The slew detect circuit of claim 6 , wherein the output circuit comprises first and second signal paths, wherein the first path is configured to cause the slew end signal to indicate that the voltage difference is not decreasing and to cause the slew end signal to indicate that the voltage difference is decreasing, wherein the first path is configured to cause the slew end signal to indicate that the voltage difference is not decreasing quicker than the first path causes the slew end signal to indicate that the voltage difference is decreasing, wherein the second path is configured to cause the slew end signal to indicate that the voltage difference is decreasing and to cause the slew end signal to indicate that the voltage difference is not decreasing, and wherein the second path is configured to cause the slew end signal to indicate that the voltage difference is decreasing quicker than the first path causes the slew end signal to indicate that the voltage difference is not decreasing.

8. The slew detect circuit of claim 6 , wherein the capacitor comprises:

a transistor structure, comprising:

a source electrode;

a gate electrode electrically connected to the source electrode;

a drain electrode; and

a field plate electrode,

wherein the drain electrode functions as a first plate electrode of the capacitor and the field plate electrode functions as a second plate electrode of the capacitor.

9. A half bridge GaN circuit, comprising:

a switch node;

a low side power switch connected to the switch node and configured to be selectively conductive according to one or more control signals;

a high side power switch connected to the switch node and configured to be selectively conductive according to the one or more control signals;

a low side power switch driver, configured to control the conductivity state of the low side power switch based on one or more of the control signals;

a high side power switch driver, configured to control the conductivity state of the high side power switch based on one or more of the control signals;

a controller configured to generate the one or more control signals; and

a low side slew detect circuit configured to prevent the low side power switch driver from causing the low side power switch to be conductive while the voltage at the switch node is decreasing,

wherein the low side slew detect circuit comprises:

a capacitor connected to a drain of the low side power switch and to a sense node;

a clamp circuit connected to the sense node and to a source of the low side power switch, and configured to prevent a voltage at the sense node from becoming less than a minimum voltage and from becoming greater than a maximum voltage;

a bias circuit connected to the sense node; and

an output circuit having an input terminal connected to the sense node, wherein the output circuit is configured to generate a low side slew end signal based on the voltage at the sense node and a voltage at the source of the low side power switch,

wherein the capacitor and the bias circuit are configured to generate the voltage at the sense node corresponding with whether or not a voltage difference between a voltage at the drain of the low side power switch and the voltage at the source of the low side power switch is decreasing, and

wherein the bias circuit is configured to bias the sense node to a voltage which causes the output circuit to generate the low side slew end signal indicating that the difference between the voltage at the drain of the low side power switch and the voltage at the source of the low side power switch is not decreasing.

10. The half bridge GaN circuit of claim 9 , wherein the low side power switch driver is configured to receive a low side control signal from the controller, to receive a low side slew end signal from the low side slew detect circuit, and to control the conductivity state of the low side power switch based on both the low side control signal and the low side slew end signal.

11. The half bridge GaN circuit of claim 10 , wherein the low side power switch driver is configured to cause the low side power switch to be non-conductive in response to either the low side signal from the controller indicating that the low side power switch is to be non-conductive or the low side slew end signal indicating that the voltage at the switch node is decreasing.

12. The half bridge GaN circuit of claim 10 , wherein the low side power switch driver is configured to cause the low side power switch to be conductive in response to both the low side signal from the controller indicating that the low side power switch is to be conductive and the low side slew end signal indicating that the voltage at the switch node is not decreasing.

13. The half bridge GaN circuit of claim 9 , wherein, in response to the difference between the voltage at the drain of the low side power switch and the voltage at the source of the low side power switch decreasing, the capacitor and the bias circuit are cooperatively configured to drive the sense node to a voltage which causes the output circuit to generate the low side slew end signal indicating that the difference between the voltage at the drain of the low side power switch and the voltage at the source of the low side power switch is decreasing.

14. The half bridge GaN circuit of claim 9 , wherein the output circuit comprises first and second signal paths, wherein the first path is configured to cause the low side slew end signal to indicate that the voltage difference is not decreasing and to cause the low side slew end signal to indicate that the voltage difference is decreasing, wherein the first path is configured to cause the low side slew end signal to indicate that the voltage difference is not decreasing quicker than the first path causes the low side slew end signal to indicate that the voltage difference is decreasing, wherein the second path is configured to cause the low side slew end signal to indicate that the voltage difference is decreasing and to cause the low side slew end signal to indicate that the voltage difference is not decreasing, and wherein the second path is configured to cause the low side slew end signal to indicate that the voltage difference is decreasing quicker than the first path causes the low side slew end signal to indicate that the voltage difference is not decreasing.

15. The half bridge GaN circuit of claim 9 , wherein the capacitor comprises:

a transistor structure, comprising:

a source electrode;

a gate electrode electrically connected to the source electrode;

a drain electrode; and

a field plate electrode,

wherein the drain electrode functions as a first plate electrode of the capacitor and the field plate electrode functions as a second plate electrode of the capacitor.