Semiconductor device for high voltage isolation
A semiconductor device includes a substrate of a first conductivity type with relatively low impurity concentration; a first region of a second conductivity type with relatively low impurity concentration, =located in the substrate; a second region of the first conductivity type with relatively high impurity concentration, located in the substrate; first and second conductors, located on the first region and separated from each other by an isolator layer; and a third conductor, separated from the first and second conductors by the isolator layer, and located on the second region. The first conductor provides a drain terminal. The second conductor provides a source terminal. The third conductor provides a gate terminal.
1. A dual junction field effect transistor (JFET) semiconductor device comprising:
a first JFET and a second JFET, wherein
each of the first and second JFETs includes a respective gate region and channel region of opposite conductivity types and forming a diode junction, a drain terminal, a source terminal, and a gate terminal,
the first JFET includes
a substrate layer of a first conductivity type with a relatively low impurity concentration,
a first region of a second conductivity type and having a relatively low impurity concentration, located in the substrate layer as the channel region of the first JFET,
first and second conductors located on and in electrical communication with the first region and separated from each other by an electrically insulating isolator layer, wherein the first conductor is the drain terminal of the first JFET and the second conductor is the source terminal of the first JFET for establishing an electrical current can flow between the source terminal and the drain terminal and through the first region without encountering an opposite conductivity type junction,
a second region of the first conductivity type and having a relatively high impurity concentration, located in the substrate layer and contacting the first region to form the diode junction of the first JFET, and
a third conductor, separated from the first and second conductors by the isolator layer, arranged on and in electrical communication with the second region, wherein the third conductor is the gate terminal of the first JFET for establishing a depletion region in the first region and thereby controlling the electrical current flow through the first region, between the source terminal and the drain terminal of the first JFET, and
the second JFET includes
a substrate layer of a first conductivity type with a relatively low impurity concentration,
a first region of the second conductivity type and having a relatively low impurity concentration, located in the substrate layer as the channel region of the second JFET,
first and second conductors located on and in electrical communication with the first region and separated from each other by an electrically insulating isolator layer, wherein the first conductor is the drain terminal of the second JFET and the second conductor is the source terminal of the second JFET for establishing an electrical current can flow between the source terminal and the drain terminal and through the first region without encountering an opposite conductivity type junction,
a second region of the first conductivity type and having a relatively high impurity concentration, located in the substrate layer and contacting the first region to form the diode junction of the second JFET, and
a third conductor, separated from the first and second conductors by the isolator layer, arranged on and in electrical communication with the second region, wherein the third conductor is the gate terminal of the second JFET for establishing a depletion region in the first region and thereby controlling the electrical current flow through the first region, between the source terminal and the drain terminal of the second JFET.
2. The dual JFET semiconductor device of claim 1 , wherein
the second conductor of the first JFET is located between the first conductor and the third conductor of the first JFET, and
the second conductor of the second JFET is located between the first conductor and the third conductor of the second JFET.
3. The dual JFET semiconductor device of claim 1 , wherein
the second JFET further comprises a third region of the first conductivity type and having a relatively high impurity concentration, located in the substrate, and
the second region of the second JFET and the third region are located on opposite sides of the first region of the second JFET.
4. The dual JFET semiconductor device of claim 3 , wherein the third region forms a diode junction with the first region of the second JFET.
5. The dual JFET semiconductor device of claim 3 , wherein the second JFET further comprises a buried region of the first conductivity type, located between the substrate and the third region of the second JFET.
6. The dual JFET semiconductor device of claim 1 , wherein the second JFET further comprises a third region of the second conductivity type and having a relatively low impurity concentration, located in the substrate.
7. The dual JFET semiconductor device of claim 6 , wherein the second JFET further comprises a fourth conductor, separated from the first, second, and third conductors of the second JFET by the isolator layer and located on and in electrical communication with the third region of the second JFET.
8. The dual JFET semiconductor device of claim 7 , wherein the first and second conductors of the second JFET are located between the third conductor and the fourth conductor of the second JFET.
9. The dual JFET semiconductor device of claim 7 , wherein the fourth conductor is arranged to be connected to a high-side power supply.
10. The dual JFET semiconductor device of claim 7 , wherein the second JFET further comprises a buried region of the second conductivity type, located between the substrate and the third region.
11. The dual JFET semiconductor device of claim 10 , wherein the second JFET further comprises a deep well region of the second conductivity type, located between the substrate and the buried region.
12. The dual JFET semiconductor device of claim 1 , wherein the second JFET further comprises a buried region of the first conductivity type, located between the substrate and the second region of the second JFET.
13. The dual JFET semiconductor device of claim 12 , wherein the buried region is in contact with the second region of the second JFET and forms a diode junction with the first region of the second JFET.
14. The dual JFET semiconductor device of claim 1 , wherein the second JFET further comprises a buried region of the second conductivity type, located between the substrate and the first region of the second JFET.
15. The dual JFET semiconductor device of claim 14 , wherein the second JFET further comprises a deep well region of the second conductivity type, located between the substrate and the buried region.
16. The dual JFET semiconductor device of claim 1 , wherein the second JFET further comprises a third region of the first conductivity type located between the first region of the second JFET and the isolator layer.
17. The dual JFET semiconductor device of claim 16 , wherein the third region is located between the first and second conductors of the second JFET in a plan view of the substrate.
18. A half-bridge driver comprising the dual JFET semiconductor device of claim 1 .
19. An integrated circuit comprising the dual JFET semiconductor device of claim 1 .
20. The dual JFET semiconductor device of claim 1 including a floating high voltage region, wherein, in a plan view of the dual JFET semiconductor device,
the first region of the first JFET is spaced from the first region of the second JFET, and
the first region of the first JFET and the first region of the second JFET, in combination, substantially surround and isolate the floating high voltage region.