Memory device with a signal control mechanism

1. A memory device, comprising:

an internal storage unit configured to store mode data corresponding to operating speed of the memory device, wherein the internal storage unit includes a mode register configured to store the mode data;

a control decoder coupled to the internal storage unit, the control decoder configured to generate a delay control signal based on the mode data;

an input buffer coupled to the control decoder, the input buffer configured to adjust a delay of an input signal based on the delay control signal; and

one or more decoders coupled to the input buffer, the one or more decoders configured to process an address, a chip select signal, a command, or a combination thereof;

wherein:

the input buffer comprises an address command input circuit configured to receive the input signal;

the mode register is coupled to the one or more decoders; and

the control decoder is coupled to the mode register, the control decoder configured to:

access the mode data stored in the mode register to generate the delay control signal, and

communicate the delay control signal to the address command input circuit.

2. The memory device of claim 1 , wherein:

the input buffer includes one or more delay components.

3. The memory device of claim 2 , wherein the input buffer includes a selection circuit configured route the input signal to a first circuit path or a second circuit path according to the delay control signal, wherein the first circuit path and the second circuit path correspond to different propagation delays.

4. The memory device of claim 3 , wherein:

the first circuit path includes the one or more delay components and a first output buffer that is configured to output the input signal when the delay control signal corresponds to a first state; and

the second circuit path includes a second output buffer that is configured to receive and output the input signal when the delay control signal corresponds to a second state.

5. The memory device of claim 3 , wherein the selection circuit includes a first selection gate and a second selection gate, wherein:

the first circuit path includes the first selection gate operably coupled to the one or more delay components, the first selection gate configured to output the input signal when the delay control signal corresponds to a first state; and

the second circuit path includes the second selection gate that is configured to output the input signal when the delay control signal corresponds to a second state.

6. The memory device of claim 1 , wherein the control decoder is configured to generate the delay control signal to bypass one or more delay components when the operating speed is an intermediate speed that is between a high-speed setting and a low-speed setting.

7. The memory device of claim 6 , wherein:

an internal storage unit configured to store latency boundary data representing a setting for the intermediate speed among multiple intermediate speed settings, wherein the multiple intermediate speed settings are between the high-speed setting and the low-speed setting; and

the control decoder is configured to generate the delay control signal based on the latency boundary data.

8. The memory device of claim 1 , wherein the input signal includes a command signal, an address signal, or a chip select signal.

9. The memory device of claim 1 , further comprising:

a clock buffer configured to receive a clock signal; and

an input latch coupled to the clock buffer and the input buffer, the input latch configured to latch the input signal according to the clock signal.

10. The memory device of claim 9 , wherein the delay for the input signal corresponds to a propagation delay of the clock signal.

11. The memory device of claim 9 , wherein:

the clock signal corresponds to a first power input;

the input signal corresponds to a second power input; and

the control decoder is configured to generate the delay control signal when the second power input is reduced relative to the second power input.

12. The memory device of claim 1 , wherein the internal storage unit includes a memory array, wherein a portion of the memory array is configured to store the mode data.

13. The memory device of claim 1 , wherein the memory device comprises a dynamic random-access memory (DRAM).

14. A method of operating a memory device, the method comprising:

determining an operating speed setting of the memory device;

generating a delay control signal according to the operating speed setting;

controlling a delay of an input signal according to the delay control signal;

communicating the input signal from an input buffer to an input latch;

selecting an intermediate operating speed from a set of multiple intermediate speed settings, wherein the multiple intermediate speed settings are between the high-speed setting and the low-speed setting; and

determining latency boundary data corresponding to the selected intermediate operating speed;

wherein:

controlling the delay includes bypassing one or more delay components in communicating the input signal from the input buffer to the input latch; and

generating the delay control signal includes generating the delay control signal according to the latency boundary data.

15. The method of claim 14 , wherein the input signal includes an address signal, a chip select signal, or a combination thereof.

16. The method of claim 14 , wherein controlling the delay includes selecting one of multiple parallel circuit paths for the input signal, wherein each of the multiple parallel circuit paths include different number and/or type of circuit components and provide different propagation delays.