Replacement materials processes for forming cross point memory
Methods of forming memory cells comprising phase change and/or chalcogenide materials are disclosed. In one aspect, the method includes providing a lower line stack extending in a first direction, the lower line stack comprising a sacrificial line over a lower conductive line. The method further includes forming a chalcogenide line extending in the first direction by selectively removing the sacrificial material of the sacrificial line and replacing the sacrificial line with a chalcogenide material.
1. A method, comprising:
patterning a material stack to form a plurality of first line stacks extending in a first direction, wherein each first line stack of the plurality of first line stacks comprises a lower electrode line, a middle electrode line, an upper electrode line, and a memory cell that comprises at least one of a storage element or a selector element; and
forming a second line stack after forming the plurality of first line stacks, wherein forming the second line stack comprises forming a sacrificial line.
2. The method of claim 1 , wherein the memory cell comprises a chalcogenide material that comprises the at least one of the storage element and the selector element.
3. The method of claim 1 , wherein the plurality of first line stacks extend in the first direction and the second line stack extends in a second direction different from the first direction.
4. The method of claim 1 , wherein the storage element of the memory cell and the selector element of the memory cell comprise a same chalcogenide phase change material.
5. The method of claim 1 , wherein forming the sacrificial line comprises:
depositing a sacrificial material over a first line stack of the plurality of first line stacks; and
etching the sacrificial material to form the sacrificial line extending in a second direction.
6. The method of claim 5 , further comprising:
selectively removing the sacrificial line; and
filling, after selectively removing the sacrificial line, a gap to form a conductive line.
7. The method of claim 5 , further comprising:
etching, after etching the sacrificial material, a portion of the first line stack, wherein etching the portion of the first line stack comprises removing a portion of the upper electrode line and the middle electrode line.
8. The method of claim 1 , further comprising:
depositing a dielectric material between each of the plurality of first line stacks to form a dielectric region; and
exposing alternating lines of the dielectric region and each of the plurality of first line stacks.
9. An apparatus, comprising:
a first line stack extending in a first direction and comprising a chalcogenide line, a first electrode, and a second electrode, wherein the first and second electrodes are electrically isolated in both the first direction and a second direction different from the first direction; and
a second line stack extending in the second direction and comprising a conductive line.
10. The apparatus of claim 9 , wherein the chalcogenide line comprises a storage element and a selector element.
11. The apparatus of claim 9 , wherein the first electrode is positioned below the chalcogenide line.
12. The apparatus of claim 9 , wherein the first line stack further comprises a chalcogenide element electrically isolated from neighboring chalcogenide elements in both the first direction and the second direction, wherein the chalcogenide line and the chalcogenide element each comprise a same phase change material.
13. The apparatus of claim 9 , wherein the first direction is orthogonal to the second direction.
14. A method comprising:
forming a first line stack oriented in a first direction;
forming a second line stack that comprises a sacrificial line oriented in a second direction different from the first direction; and
replacing the sacrificial line with a conductive line comprising a chalcogenide material.
15. The method of claim 14 , wherein forming the first line stack further comprises:
forming a first chalcogenide line comprising a phase change material; and
forming, above the first chalcogenide line, a second chalcogenide line comprising the phase change material.
16. The method of claim 15 , wherein forming the first line stack further comprises:
forming a lower electrode line;
forming a middle electrode line; and
forming an upper electrode line above the first chalcogenide line.
17. The method of claim 14 , wherein the first line stack comprises a second chalcogenide material, and wherein at least one of the chalcogenide material or the second chalcogenide material comprise a storage element and a selector element.
18. The method of claim 17 , wherein the storage element and the selector element comprise a same chalcogenide phase change material.