IP Library Granted Patent US 10,673,401
Granted Patent B2
US 10,673,401 · App. 16/046,962 · Granted Jun 2, 2020

Optimized multi gain LNA enabling low current and high linearity including highly linear active bypass

Inventors: Emre Ayranci (Costa Mesa, CA); Miles Sanner (San Diego, CA)
Assignee: pSemi Corporation
H03G3/3036H03F1/223H03F1/3205H03F3/193H03F3/211H03F3/72H03G1/0023H03G1/0029H03G1/0088H03G3/001H03F2200/156H03F2200/159H03F2200/294H03F2200/451H03F2200/489H03F2200/492H03F2200/61H03F2203/7239H03G3/3052H03G2201/504
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,673,401
App. No.
16/046,962
Granted
Jun 2, 2020
Kind
B2
Abstract

An LNA having a plurality of paths, each of which can be controlled independently to achieve a gain mode. Each path includes at least an input FET and an output FET coupled in series. A gate of the output FET is controlled to set the gain of the LNA. Signals to be amplified are applied to the gate of the input FET. Additional stacked FETs are provided in series between the input FET and the output FET.

Claims (43)

1. A low noise amplifier (LNA) comprising:

(a) a first path comprising a first input field effect transistor (FET) having a gate and a source, the first input FET coupled in series with a first output FET having a gate, the gate of the first output FET being coupled to a first bias voltage source;

(b) a second path comprising a second input FET having a gate and a source, the second input FET coupled in series with a second output FET having a gate, the gate of the first input FET coupled to the gate of the second input FET and the gate of the second output FET selectively coupled to a second bias voltage source;

(c) a source switch coupled between the source of the first input FET and the source of the second input FET such that when the source switch is closed, the source of the first input FET is coupled to the source of the second input FET and when the source switch is open, the source of the first input FET is disconnected from the source of the second input FET;

(d) a cap switch having a first and second terminal and a first capacitive element having a first and second terminal, the first terminal of the first capacitive element coupled to the gate of the first input FET the second terminal of the first capacitive element coupled to the first terminal of the cap switch and the second terminal of the cap switch coupled to the source of the first input FET.

2. A low noise amplifier (LNA) comprising:

(a) a first path comprising a first input field effect transistor (FET) having a gate and a source, the first input FET coupled in series with a first output FET having a gate, the gate of the first output FET being coupled to a first bias voltage source;

(b) a second path comprising a second input FET having a gate and a source, the second input FET coupled in series with a second output FET having a gate, the gate of the first input FET coupled to the gate of the second input FET and the gate of the second output FET selectively coupled to a second bias voltage source; and

(c) a source switch coupled between the source of the first input FET and the source of the second input FET such that when the source switch is closed, the source of the first input FET is coupled to the source of the second input FET and when the source switch is open, the source of the first input FET is disconnected from the source of the second input FET;

the first output FET having a drain, the LNA further comprising a resistance and a switch coupled in series between the drain and a voltage source.

3. A low noise amplifier (LNA) comprising:

(a) a first path comprising a first input field effect transistor (FET) having a gate and a source, the first input FET coupled in series with a first output FET having a gate, the gate of the first output FET being coupled to a first bias voltage source;

(b) a second path comprising a second input FET having a gate and a source, the second input FET coupled in series with a second output FET having a gate, the gate of the first input FET coupled to the gate of the second input FET and the gate of the second output FET selectively coupled to a second bias voltage source;

(c) a source switch coupled between the source of the first input FET and the source of the second input FET such that when the source switch is closed, the source of the first input FET is coupled to the source of the second input FET and when the source switch is open, the source of the first input FET is disconnected from the source of the second input FET; and

(d) an inductive element coupled between the source of the first input FET and ground and a degeneration inductor switch coupled in parallel with at least a portion of the inductive element to reduce the amount of inductance between the source of the first input FET and ground when the degeneration inductor switch is closed.

4. A low noise amplifier (LNA) comprising:

(e) a first path comprising a first input field effect transistor (FET) having a gate and a source, the first input FET coupled in series with a first output FET having a gate, the gate of the first output FET being coupled to a first bias voltage source;

(f) a second path comprising a second input FET having a gate and a source, the second input FET coupled in series with a second output FET having a gate, the gate of the first input FET coupled to the gate of the second input FET and the gate of the second output FET selectively coupled to a second bias voltage source;

(g) a source switch coupled between the source of the first input FET and the source of the second input FET such that when the source switch is closed, the source of the first input FET is coupled to the source of the second input FET and when the source switch is open, the source of the first input FET is disconnected from the source of the second input FET; and

(h) a capacitive element and a switch coupled in series between the source of the first input FET and ground.

5. A low noise amplifier (LNA) comprising:

(a) a first path comprising a first input field effect transistor (FET) having a gate and a source, the input FET coupled in series with a first output FET having a drain and a gate, the gate of the first output FET being coupled to a first bias voltage source;

(b) a second path comprising a second input FET having a gate and a source, the second input FET coupled in series with a second output FET having a gate, the gate of the first input FET coupled to the gate of the second input FET and the gate of the second output FET selectively coupled to the bias voltage source;

(c) a source switch coupled between the source of the first input FET and the source of the second input FET such that when the source switch is closed, the source of the first input FET is coupled to the source of the second input FET and when the source switch is open, the source of the first input FET is disconnected from the source of the second input FET; and

(d) a resistance and a switch coupled in series between the drain of the first output FET and a voltage source.

6. The LNA of claim 5 , further comprising an inductive element coupled between the source of the first input FET and ground and a degeneration inductor switch coupled in parallel with at least a portion of the inductive element to reduce the amount of inductance between the source of the first input FET and ground when the degeneration inductor switch is closed.

7. The LNA of claim 6 , the LNA further comprising a cap switch having a first and second terminal and a first capacitive element having a first and second terminal, the first terminal of the first capacitive element coupled to the gate of the first input FET the second terminal of the first capacitive element coupled to the first terminal of the cap switch and the second terminal of the cap switch coupled to the source of the first input FET.

8. The LNA of claim 6 , a capacitive element and a switch coupled in series between the source of the first input FET and ground.

9. The LNA of claim 8 , the LNA further comprising a cap switch having a first and second terminal and a first capacitive element having a first and second terminal, the first terminal of the first capacitive element coupled to the gate of the first input FET the second terminal of the first capacitive element coupled to the first terminal of the cap switch and the second terminal of the cap switch coupled to the source of the first input FET.

10. The LNA of claim 5 , further comprising a capacitive element and a switch coupled in series between the source of the first input FET and ground.

11. The LNA of claim 10 , wherein bias voltage source coupled to the gate of the second output FET is a second bias voltage source that is independent of the first bias voltage source.

12. The LNA of claim 5 , wherein bias voltage source coupled to the gate of the second output FET is a second bias voltage source that is independent of the first bias voltage source.

13. The LNA of claim 5 , the LNA further comprising a cap switch having a first and second terminal and a first capacitive element having a first and second terminal, the first terminal of the first capacitive element coupled to the gate of the first input FET the second terminal of the first capacitive element coupled to the first terminal of the cap switch and the second terminal of the cap switch coupled to the source of the first input FET.

14. A low noise amplifier (LNA) comprising:

(a) a first path comprising a first input field effect transistor (FET) having a gate and a source, the first input FET coupled in series with a first output FET having a gate, the gate of the first output FET being coupled to a first bias voltage source;

(b) a second path comprising a second input FET having a gate and a source, the second input FET coupled in series with a second output FET having a gate, the gate of the first input FET coupled to the gate of the second input FET and the gate of the second output FET selectively coupled to the bias voltage source;

(c) an inductive element coupled between the source of the first input FET and ground and a degeneration inductor switch coupled in parallel with at least a portion of the inductive element to reduce the amount of inductance between the source of the first input FET and ground when the degeneration inductor switch is closed; and

(d) a source switch coupled between the source of the first input FET and the source of the second input FET such that when the source switch is closed, the source of the first input FET is coupled to the source of the second input FET and when the source switch is open, the source of the first input FET is disconnected from the source of the second input FET.

15. The LNA of claim 14 , wherein bias voltage source coupled to the gate of the second output FET is a second bias voltage source that is independent of the first bias voltage source.

16. The LNA of claim 14 , a capacitive element and a switch coupled in series between the source of the first input FET and ground.

17. The LNA of claim 14 , the LNA further comprising a cap switch having a first and second terminal and a first capacitive element having a first and second terminal, the first terminal of the first capacitive element coupled to the gate of the first input FET the second terminal of the first capacitive element coupled to the first terminal of the cap switch and the second terminal of the cap switch coupled to the source of the first input FET.

18. The LNA of claim 17 , wherein bias voltage source coupled to the gate of the second output FET is a second bias voltage source that is independent of the first bias voltage source.

19. The LNA of claim 18 , the first output FET having a drain, the LNA further comprising a resistance and a switch coupled in series between the drain and a voltage source.

Assignments (2)
CHANGE OF NAME Recorded Apr 25, 2023
From: PEREGRINE SEMICONDUCTOR CORPORATION
To: PSEMI CORPORATION
Reel/Frame 063442/0302 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 20, 2023
From: AYRANCI, EMRE; SANNER, MILES
To: PEREGRINE SEMICONDUCTOR CORPORATION
Reel/Frame 063387/0724 →
Continuity (2)
Continuation 15479173 · Apr 4, 2017
Related Publication 20190020322A1 · Jan 17, 2019
Cited By (1)
US 12,191,816