Tandem photovoltaic cell
The present invention relates to a multi-layer material comprising an assembly of layers, called “front layers”, capable of forming a front photovoltaic cell, and an assembly of layers, called “rear layers”, capable of forming a rear photovoltaic cell, wherein the front layer assembly and the rear layer assembly are electrically insulated by an insulating layer of epitaxial material.
1. A Multi-layer material comprising:
an assembly of layers, called “front layer assembly” forming a front photovoltaic cell comprising at least one combination of layers of a first material and of a second material forming an heterojunction comprising a chalcogenide or perovskite layer, and a back contact layer of a III-V semiconductor compound; and
an assembly of layers, called “rear layer assembly” forming a rear photovoltaic cell comprises at least monocrystalline silicon,
wherein the front layer assembly and the rear layer assembly are electrically insulated by an insulating layer of epitaxial material, and form a tandem photovoltaic cell having a vertical stacking of said silicon cell and said heterojunction comprising at least a chalcogenide or perovskite layer and said back contact layer of a III-V semiconductor compound, wherein said chalcogenide or perovskite layer is epitaxial.
2. The Multilayer material according to claim 1 , wherein the front layer assembly comprises at least one combination of heterojunction layers comprising a first material and a second material, a back contact layer, and a front contact layer.
3. The Multilayer material according to claim 1 , wherein said chalcogenide layer is a CIGS or CdTe layer.
4. The Multi-layer material according to claim 1 , wherein the insulating layer is epitaxially grown.
5. The Multi-layer material according to claim 1 , wherein the insulating layer comprises, or consists of, aluminum nitride (AlN) and/or phosphide of aluminum (AlP), and/or any of the alloys comprising AlN or AlP, or Gd 2 O 3 , Al 2 O 3 or (Ba,Sr)TiO 3 .
6. The Multi-layer material according to claim 1 , wherein the front layer assembly comprises at least one combination of heterojunction layers comprising a first material and a second material and wherein the heterojunction comprises vertical semiconductor compounds type of the CIGS (Cu,Ag)(In,Ga,Al),(S,Se) 2 ) type.
7. The Multi-layer material according to claim 1 , wherein the front layer assembly comprises at least one combination of heterojunction layers comprising a first material and a second material and in that the first material and the second material are connected in series monolithically.
8. The Multi-layer material according to claim 1 , wherein multi-layer material comprises a layer of at least one monocrystalline silicon having a front face and a rear face, wherein the rear face comprises interdigitated contact electrodes.
9. The Multi-layer material according to claim 1 , wherein the front layer assembly comprises at least one combination of heterojunction layers comprising a first material and a second material, wherein the multi-layer material comprises a layer comprising a front face and a face rear, referred to as the front contact of the heterojunction, wherein the rear face is in contact with the front face of the heterojunction, wherein the front contact layer comprises a transparent conductive material, and wherein the rear face of the heterojunction and the front contact layer are alternately in contact with the back contact layer.
10. The Multilayer material according to claim 1 , wherein said multilayer material forms a front junction with a monolithic type interconnection associated with a silicon structure.
11. The Multi-layer material according to claim 1 , wherein the rear layer assembly, the front layer assembly, the electrically-insulating layer, and, optionally the intermediate layer(s) between these layers, form a combination of monocrystalline layers.
12. The Multi-layer material according to claim 1 , wherein the front layer assembly comprises a photon-transparent, conductive layer on the front side of the heterojunction.
13. The Multi-layer material according to claim 1 , wherein the multi-layer material forms a 4-wire tandem photovoltaic cell.
14. The Multi-layer material according to claim 1 , wherein the multi-layer material comprises a horizontal alternation of type III-V semiconductor compounds combined with CIGS.
15. A Method of manufacturing a multi-layer material according to claim 1 .
16. The Method according to claim 15 , wherein the method comprises consecutively:
(i) preparing a monocrystalline silicon having a front face and a rear face;
(ii) depositing or growing an electrically-insulating layer on the front face of the monocrystalline silicon, wherein the insulating layer has a front face and a rear face;
(iii) deposition or growth on the front face of the insulating layer of a layer, comprising a front face and a rear face, referred to as the rear contact face, a heterojunction, wherein the front face is in contact with the rear face of the heterojunction;
(iv) deposition or growth on the front face of the back contact layer of a layer of a first material of a heterojunction, and then deposition or growth of a layer of a second material, wherein the heterojunction comprises a front face and a rear face; and
(v) the structuring (P 1 ) of zones, referred to as the first insulating zones (p 1 ) isolating the conductive zones of the back contact layer, wherein the structuring (P 1 ) forms alternative contacts on the front face of the electrically-insulating layer with the back layer of the heterojunction and the rear face of the heterojunction;
wherein the electrically-insulating layer is arranged between the rear face of the back contact layer of the heterojunction and the front face of the monocrystalline silicon.
17. The Method according to claim 16 , wherein the method comprises:
(vi) the structuring (P 2 ) of zones, referred to as second insulating zones (p 2 ), isolating semiconductor regions of the heterojunction;
wherein the first (p 1 ) and second (p 2 ) insulating zones are not superimposed in the vertical stacking of layers of the multilayer material.
18. The Method according to claim 16 , wherein the method comprises:
(viii) the deposition or growth on the front face of the heterojunction of a conductive photon-transparent layer, and
(ix) the structuring (P 3 ) of zones, referred to as third insulating zones (p 3 ), isolating conductive layer conductive zones;
wherein the first (p 1 ), second (p 2 ) and third (p 3 ) insulating zones are not superimposed in the vertical stacking of layers of the multilayer material.
19. A photovoltaic cell comprising one or more multi-layer materials as defined according to claim 1 , or obtained by a method as defined according to claim 16 forming a double junction called tandem cell.
20. A mobile or stationary device comprising an electricity generator and wherein the electricity is produced by the implementation of one or more multi-layer materials as defined in claim 1 , or obtained by a method as defined in claim 16 .
21. A method of producing electricity from electromagnetic radiation wherein one or more multi-layer materials as defined in claim 1 , or obtained by a method such as defined according to claim 16 , are exposed to electromagnetic radiationand in that an electric current is collected.
22. The Method according to claim 21 , wherein said electric current is collected by interdigitated contact electrodes on the rear side.