Systems and methods for threshold voltage modification and detection

1. A memory device comprising:

a memory array, the memory array comprising:

a set of memory cells, each memory cell of the set of memory cells comprising at least one transistor and at least one capacitor; and

a programmed memory cell, comprising a memory cell of the set of memory cells that is selectively programmed by applying hot-carrier injection (HCI) to a transistor of the programmed memory cell, wherein the HCI was applied by repetitively performing an HCI application cycle until a target threshold voltage (Vth) change was reached.

2. The memory device of claim 1 , comprising:

a reference transistor that is not programmed by applying HCI to the reference transistor.

3. The memory device of claim 2 , wherein:

the set of memory cells comprise 1T1C memory cells each comprising one transistor and one capacitor; and

the reference transistor is disposed in a reference memory cell different from the programmed cell.

4. The memory device of claim 2 , wherein:

the set of memory cells comprise 2T2C memory cells each comprising two transistors and two capacitors; and

the reference transistor is disposed in a programmed memory cell different from the programmed cell.

5. The memory device of claim 1 , comprising:

a plurality of programmed memory cells; and

a plurality of un-programmed memory cells that have not be programmed by applying HCI and are not a reference for the plurality of programmed memory cells.

6. The memory device of claim 5 , wherein:

the plurality of programmed memory cells and the plurality of un-programmed memory cells provide pattern data to be used in data processing functionality.

7. The memory device of claim 6 , wherein the pattern data comprises binary data to be used in the data processing functionality.

8. The memory device of claim 6 , wherein the pattern data comprises an encryption key, a decryption key, or both.

9. The memory device of claim 6 , wherein the pattern data comprises an encryption key, a decryption key, or both.

10. The memory device of claim 6 , wherein the pattern data comprises computer-readable instructions to be implemented by an electronic device.

11. The memory device of claim 6 , wherein the pattern data comprises an indication of configuration settings for the memory device.

12. The memory device of claim 11 , wherein the indication of configuration settings comprises one or more timings to be used for the memory device.

13. One-time programming (OTP) injection circuitry, comprising circuitry configured to:

program at least one memory cell of a memory array by applying hot-carrier injection (HCI) to a transistor of the at least one memory cell via circuitry configured to repetitively perform an HCI application cycle until a target threshold voltage (Vth) change is reached.

14. The OTP injection circuitry of claim 13 , comprising circuitry configured to:

determine a desired pattern to introduce into the memory array;

identify memory cells of the memory array to be programmed to form the desired pattern; and

applying the HCI to each of the identified memory cells of the memory area to be programmed.

15. The OTP injection circuitry of claim 13 , comprising circuitry configured to:

perform the HCI application cycle, by:

raising a plate voltage of the at least one memory cell;

then introducing a strong HCI to the at least one memory cell; and

then lowering the plate voltage of the at least one memory cell.

16. The OTP injection circuitry of claim 13 , wherein the target threshold voltage (Vth) change comprises a range of 200-300 mV.

17. A method, comprising:

identifying one or more programmed memory cells of a memory array, wherein the one or more programmed memory cells are programmed by applying hot-carrier injection (HCI) to a transistor of the one or more programmed memory cells, wherein at least a portion of the one or more programmed memory cells of the memory array were programmed by repetitively performing an HCI application cycle until a target threshold voltage (Vth) change was reached;

based upon the one or more programmed memory cells, identifying programmed pattern data; and

implementing one or more data processing functions based upon the programmed pattern data.

18. The method of claim 17 , wherein programming the one or more memory cells comprises:

initializing the one or more memory cells for programming;

then raising a plate voltage of the one or more memory cells;

then lowering a selected digit of the one or more memory cells to introduce a strong HCI; and

then lowering the plate voltage of the one or more memory cells.

19. The method of claim 17 , comprising:

based upon the programmed pattern data: implementing decryption, implementing encryption, implementing a boot-up routine, implementing a particular memory device operating mode, or any combination thereof.