Display device and manufacturing method thereof
The purpose of the invention is to form a stable oxide semiconductor TFT in a display device. The concrete structure is: A display device having a TFT substrate that includes a TFT having an oxide semiconductor layer comprising: the oxide semiconductor layer is formed on a first insulating film that is formed by a silicon oxide layer, the oxide semiconductor layer and an aluminum oxide film are directly formed on the first insulating film. The first insulating film becomes oxygen rich when the aluminum oxide film is formed on the first insulating film by sputtering. Oxygens in the first insulating film is effectively confined in the first insulating film, eventually, the oxygens diffuse to the oxide semiconductor for a stable operation of the oxide semiconductor TFT.
1. A display device having a TFT substrate that includes a TFT having an oxide semiconductor layer comprising:
the oxide semiconductor layer is formed on a first insulating film that is formed by a silicon oxide layer,
the oxide semiconductor layer and an aluminum oxide film are directly formed on the first insulating film,
wherein the oxide semiconductor layer and the aluminum oxide film do not overlap to each other in a plan view,
wherein a gap of a width of 10 microns or less is formed between the oxide semiconductor layer and the aluminum oxide film,
wherein an edge of the aluminum oxide film is reverse tapered in a cross sectional view.
2. The display device according to claim 1 ,
wherein a first gate electrode is formed under the oxide semiconductor layer and the first insulating film in a cross sectional view,
the first insulating film works as a gate insulating film.
3. The display device according to claim 2 ,
wherein the first gate electrode works as a light stopping film.
4. The display device according to claim 2 ,
wherein a second insulating film made of silicon oxide is formed on the oxide semiconductor layer,
a second gate electrode is formed on the second insulating film.
5. The display device according to claim 4 ,
wherein the second insulating film is formed only on a channel of the oxide semiconductor layer which constitutes the TFT.
6. The display device according to claim 2 ,
wherein a drain electrode contacts a first edge of the oxide semiconductor layer, a source electrode contacts a second edge, which opposes to the first edge, of the oxide semiconductor layer,
a part of the drain electrode and a part of the source electrode overlap with the first gate electrode in a plan view.
7. The display device according to claim 1 ,
wherein a TFT having a polysilicon layer is further formed on the TFT substrate.
8. The display device according to claim 7 ,
a third gate electrode, which constitutes the TFT having the polysilicon layer, and a first gate electrode, which constitutes the TFT having the oxide semiconductor layer, are formed on a same layer.
9. The display device according to claim 1 ,
the display device is a liquid crystal display device.
10. The display device according to claim 1 ,
the display device is an organic EL display device.
11. A manufacturing method of a display device comprising:
forming a first insulating film by silicon oxide on a substrate,
forming an oxide semiconductor layer on the first insulating film,
forming photo resist on the oxide semiconductor layer, and patterning the oxide semiconductor layer, forming by sputtering an aluminum oxide film on the photo resist, which is on the oxide semiconductor layer, and the first insulating film,
after that, removing the photo resist to separate the oxide semiconductor layer and the aluminum oxide film to each other wherein the oxide semiconductor layer and the aluminum oxide film do not overlap to each other in a plan view,
forming a gap of a width of 10 microns or less between the oxide semiconductor layer and the aluminum oxide film.
12. The manufacturing method of the display device according to claim 11 ,
wherein a side etching under the photo resist is formed in the oxide semiconductor layer during patterning of the oxide semiconductor layer.
13. The manufacturing method of the display device according to claim 12 ,
wherein the gap is formed between the oxide semiconductor layer and the aluminum oxide film at a place that the side etching is formed.