Sputtering techniques for biosensors
Systems and methods for forming probes for a biosensor. In the systems and methods disclosed herein, a base substrate is provided; and a platinum layer is formed on the base substrate by sputtering platinum in the absence of oxygen. The platinum layer is formed using a sputtering pressure of at least 30 mtorr.
1. A method of forming a probe for a glucose biosensor, the method comprising the steps of:
providing a base substrate;
sputtering a first adhesion-promoting layer overlying the base substrate;
sputtering a second surface-roughness-promoting layer overlying the first adhesion-promoting layer, wherein the sputtering of the second surface-roughness-promoting layer is in presence of oxygen using a sputtering source comprising a material selected from the group of platinum, iridium, ruthenium, and zirconium, and wherein the second surface-roughness-promoting layer has a thickness from 20 nm to 200 nm; and
sputtering a platinum third layer overlying the second surface-roughness-promoting layer, the platinum third layer being formed by sputtering platinum in absence of oxygen;
wherein the method is a continuous process using a conveyor to continuously move the base substrate through a sputtering chamber during sputtering in the sputtering chamber.
2. The method of claim 1 , wherein the step of sputtering the first adhesion-promoting layer overlying the base substrate comprises sputtering a titanium layer overlying the base substrate.
3. The method of claim 1 , wherein the step of sputtering the second surface-roughness-promoting layer is performed by gas flow sputtering.
4. The method of claim 1 , wherein the step of providing the base substrate comprises providing a base substrate formed from polyethylene terephthalate (PET).
5. The method of claim 1 , wherein the step of sputtering the platinum third layer overlying the second surface-roughness-promoting layer comprises sputtering a platinum third layer having a thickness of between 25 nm and 100 nm.
6. The method of claim 1 , wherein the step of sputtering the platinum third layer overlying the second layer is performed at a sputtering pressure of above 30 mtorr.
7. The method of claim 1 , wherein the sputtering the platinum third layer comprises sputtering the platinum third layer having a thickness of between 15 nm and 2000 nm.
8. The method of claim 1 , wherein the sputtering the platinum third layer comprises sputtering the platinum third layer using a sputtering power of at least 100 W.
9. The method of claim 1 , wherein the platinum third layer is sputtered using a sputtering pressure of at least 50 mtorr.
10. The method of claim 1 , wherein the first adhesion-promoting layer has a thickness of from 5 nm to 100 nm.