Adjustment of a pre-read operation associated with a write operation
Data can be received at a memory sub-system. A characteristic of the memory sub-system can be identified. A read voltage level can be determined based on the characteristic of the memory sub-system. A read operation can be performed at the memory sub-system based on the read voltage level to retrieve stored data. The received data can be stored at the memory sub-system based on the stored data that was retrieved from the read operation that is based on the read voltage level.
1. A method comprising:
receiving first data at a memory sub-system;
identifying a characteristic of the memory sub-system, the characteristic comprising an amount of time that has elapsed since a prior write operation has been performed at the memory sub-system;
comparing the amount of time that has elapsed since the prior write operation to a threshold amount of time;
adjusting, by a processing device, a prior read voltage level to determine an adjusted read voltage level based on the amount of time that has elapsed since the prior write operation exceeding the threshold amount of time;
performing a read operation at the memory sub-system based on the adjusted read voltage level to retrieve second data; and
storing the first data at the memory sub-system based on the second data retrieved by the read operation that was based on the adjusted read voltage level.
2. The method of claim 1 , wherein performing the read operation at the memory sub-system based on the adjusted read voltage level to retrieve the second data comprises:
applying the adjusted read voltage level to one or more memory cells of the memory sub-system, and wherein the adjusted read voltage level is different than the prior read voltage level applied to another memory cell of the memory sub-system.
3. The method of claim 1 , wherein storing the first data at the memory sub-system based on the second data that was retrieved from the read operation comprises:
determining whether the first data matches with the second data that was retrieved from the read operation based on the read voltage level; and
changing a value stored at one or more memory cells of the memory sub-system responsive to the second data not matching the first data.
4. The method of claim 1 , wherein the characteristic indicates that a threshold voltage for memory cells of the memory sub-system has changed, and wherein the adjusted read voltage level is based on the change of the threshold voltage.
5. The method of claim 1 , wherein the characteristic is further based on a condition of the memory sub-system, the condition being one or more of a number of write operations performed at the memory sub-system, an error rate associated with data read from the memory sub-system, and an operating temperature of the memory sub-system.
6. The method of claim 1 , wherein the read operation is performed before the storing of the first data.
7. The method of claim 1 , wherein the memory sub-system comprises a cross point array based memory.
8. A system comprising:
a memory component; and
a processing device, operatively coupled with the memory component, to:
receive data at a memory sub-system;
identify a characteristic of the memory sub-system, the characteristic comprising an amount of time that has elapsed since a prior write operation has been performed at the memory sub-system;
compare the amount of time that has elapsed since the prior write operation to a threshold amount of time;
adjust a prior read voltage level to determine an adjusted read voltage level based on the amount of time that has elapsed since the prior write operation exceeding the threshold amount of time;
perform a read operation at the memory sub-system based on the adjusted read voltage level to retrieve stored data; and
store the received data at the memory sub-system based on the stored data that was retrieved from the read operation that is based on the adjusted read voltage level.
9. The system of claim 8 , wherein to perform the read operation at the memory sub-system based on the read voltage level to retrieve the stored data, the processing device is further to:
apply the adjusted read voltage level to one or more memory cells of the memory sub-system, and wherein the adjusted read voltage level is different than the prior read voltage level applied to another memory cell of the memory sub-system.
10. The system of claim 8 , wherein to store the received data at the memory sub-system based on the stored data that was retrieved from the read operation, the processing device is further to:
determine whether the received data matches with the stored data that was retrieved from the read operation based on the read voltage level; and
change a value stored at one or more memory cells of the memory sub-system when the stored data does not match the received data.
11. The system of claim 8 , wherein the characteristic indicates that a threshold voltage for memory cells of the memory sub-system has changed, and wherein the adjusted read voltage level is based on the change of the threshold voltage.
12. The system of claim 8 , wherein the characteristic is further based on a condition of the memory sub-system, the condition being one or more of a number of write operations performed at the memory sub-system, an error rate associated with data read from the memory sub-system, and an operating temperature of the memory sub-system.
13. The system of claim 8 , wherein the read operation is performed before the storing of the received data.
14. The system of claim 8 , wherein the memory sub-system comprises a cross point array based memory.
15. A non-transitory computer readable medium comprising instructions, which when executed by a processing device, cause the processing device to perform operations comprising:
receiving data at a memory sub-system;
identifying a condition of the memory sub-system, the condition comprising an amount of time that has elapsed since a prior write operation has been performed at the memory sub-system exceeds a threshold amount of time;
in response to identifying the condition of the memory sub-system, determining a new read voltage level for the memory sub-system, wherein the new read voltage level is changed from a prior read voltage level used by the memory sub-system; and
applying the new read voltage level to one or more memory cells of the memory sub-system to store the received data.
16. The non-transitory computer readable medium of claim 15 , wherein the condition of the memory sub-system indicates that a threshold voltage for the one or more memory cells of the memory sub-system has changed.
17. The non-transitory computer readable medium of claim 15 , wherein the condition is further one or more of a number of write operations performed at the memory sub-system, an error rate associated with data read from the memory sub-system, and an operating temperature of the memory sub-system.
18. The non-transitory computer readable medium of claim 15 , wherein the one or more memory cells of the memory sub-system are associated with a cross point array based memory component.
19. The non-transitory computer readable medium of claim 15 , wherein to apply the new read voltage level to the one or more memory cells of the memory sub-system to store the received data, the operations further comprise:
retrieving stored data at the one or more memory cells based on the new read voltage level; and
applying an additional voltage to the one or more memory cells when the stored data does not match with the received data.