Film-forming material
A film-forming material of the present invention contains an oxyfluoride of yttrium represented by YO X F Y (X and Y are numbers satisfying 0<X and X<Y) and YF 3 , wherein a ratio I 2 /I 1 of a peak height I 2 of the (020) plane of YF 3 to a peak height I 1 of the main peak of YO X F Y as analyzed by XRD is from 0.005 to 100. It is preferable that a ratio I 4 /I 1 of a peak height I 4 of the main peak of Y 2 O 3 to the peak height I 1 of the main peak of YO X F Y as analyzed by XRD is 0.01 or less.
1. A film-forming material comprising:
an yttrium oxyfluoride represented by YO 0.8 F 1.4 and YF 3 ,
wherein a ratio I 2 /I 1 of a peak height I 2 of the (020) plane of the YF 3 to a height I 1 of a main peak of the YO 0.8 F 1.4 as analyzed by XRD is from 0.01 to 3,
and the average particle size D 50 of the film-forming material is 0.1 μm to 3 μm.
2. The film-forming material according to claim 1 , wherein the film-forming material is a powder that is not prepared by a granulation process.