Power semiconductor device and method for manufacturing power semiconductor device
This power semiconductor device is provided with: a substrate; and a semiconductor element which is bonded onto the substrate using a sinterable metal bonding material. The semiconductor element comprises: a base; a first conductive layer that is provided on a first surface of the base, said first surface being on the substrate side; and a second conductive layer that is provided on a second surface of the base, said second surface being on the reverse side of the first surface. The thickness of the first conductive layer is from 0.5 times to 2.0 times (inclusive) the thickness of the second conductive layer.
1. A power semiconductor device comprising:
a substrate; and
a semiconductor element bonded on the substrate by using a sinterable metal bonding material,
wherein the semiconductor element has a base, a first conductive layer disposed on a first surface on a substrate side of the base, and a second conductive layer disposed on a second surface opposite to the first surface of the base, the first conductive layer including an AlSi layer and a Ni layer, the AlSi layer and the Ni layer directly contacting one another, and
wherein the thickness of the first conductive layer is from 0.5 times to 2.0 times (inclusive) the thickness of the second conductive layer.
2. The power semiconductor device according to claim 1 , wherein the thickness of the first conductive layer is from 0.55 times to 1.8 times (inclusive) the thickness of the second conductive layer.
3. The power semiconductor device according to claim 1 , wherein
the second conductive layer has a multilayer structure.
4. The power semiconductor device according to claim 1 , wherein
the base of the semiconductor element has a thickness of 150 μm or less.
5. The power semiconductor device according to claim 1 , wherein
the metal of the sinterable metal bonding material is selected from the group consisting of Ag, Cu, and Ni.
6. The power semiconductor device according to claim 1 , wherein
the Ni layer has a thickness of 1.5 μm or more.
7. The power semiconductor device according to claim 1 , wherein
the thickness of the Ni layer is 1.15 times or more than the thickness of the AlSi layer.
8. The power semiconductor device according to claim 1 ,
wherein the base of the semiconductor element is a silicon-based material,
wherein the second conductive layer is connected to a wiring member by using a solder material containing Sn,
wherein the first conductive layer has the AlSi layer disposed on a base side of the first conductive layer, an Au layer disposed on a side opposite to the base side of the first conductive layer, and the Ni layer disposed between the AlSi layer and the Au layer, and
wherein the second conductive layer has a second AlSi layer disposed on a base side of the second conductive layer, a second Au layer disposed on a side opposite to the base side of the second conductive layer, and a second Ni layer disposed between the AlSi layer and the Au layer.
9. The power semiconductor device according to claim 1 , wherein
if the linear expansion coefficient of the substrate is equal to or greater than the linear expansion coefficient of the semiconductor element, the thickness of the first conductive layer is from 1.0 times to 1.8 times (inclusive) the thickness of the second conductive layer, and wherein
if the linear expansion coefficient of the substrate is smaller than the linear expansion coefficient of the semiconductor element, the thickness of the first conductive layer is from 0.55 times (inclusive) to 1.0 times (exclusive) the thickness of the second conductive layer.