Tungstate ion solution and hybrid photovoltaic device
The invention concerns a solution of tungstate ions W 6+ (VI) comprising as solvent at least one optionally partly etherified polyalcohol, a preparation method and uses thereof. The invention further concerns a layer comprising at least one tungsten oxide WO z comprising one or more polyoxotungstate complexes, methods for preparing the same and uses thereof, and in particular a photovoltaic device comprising said layer of material.
1. A solution of tungstate ions W 6+ (VI) and counter-ions of the tungstate ions consisting of:
as solvent at least one polyalcohol, optionally partly etherified,
tungstate ions in the form of one or more polyoxotungstate complexes selected from the group consisting of [W 6 O 19 ] 2− , [W 10 O 32 ] 4− and [W 7 O 24 ] 6− ; and
H + protons, as counter ions of the tungstate ions.
2. The solution according to claim 1 , wherein said at least one polyalcohol is a glycolic compound, optionally partly etherified.
3. The solution according to claim 1 , wherein said at least one polyalcohol is ethylene glycol.
4. The solution according to claim 1 , wherein said solution has a concentration of tungstate ions of 0.001 to 1 mol·L −1 .
5. The solution according to claim 1 , wherein said solution is limpid.
6. The solution according to claim 1 , wherein said solution has a dynamic viscosity of between 2 and 64 cP (mPa·s) at 25° C. and at atmospheric pressure (101 325 Pa).
7. The solution according to claim 1 , wherein said solution has a dynamic viscosity of between 4 and 54 cP (mPa·s), at 25° C. and at atmospheric pressure (101325 Pa).
8. The solution according to claim 1 , wherein said solution has a dynamic viscosity of between 4 and 25 cP (mPa·s), at 25° C. and at atmospheric pressure (101325 Pa).
9. The solution according to claim 1 , wherein said solution has a dynamic viscosity of between 8 and 19 cP (mPa·s), at 25° C. and at atmospheric pressure (101325 Pa).
10. A method for preparing the solution according to claim 1 , comprising increasing the temperature of a suspension or gel of H 2 WO 4 as a polyoxotungstate complex precursor in a polyalcohol solvent.
11. The method according to claim 10 , wherein the formation of the polyoxotungstate complex(es) is obtained by heating at a temperature higher than 120° C.
12. A method for preparing a layer of tungsten oxide WO z deposited on a solid substrate comprising deposition of the solution according to claim 1 on a solid substrate via a wet process and removal of the solvent from the solution in order to obtain a film of tungsten oxide WO z on the solid substrate, wherein z is greater than 2.7.
13. The method according to claim 11 , wherein the removal of the solvent is conducted at a temperature higher than the boiling point of the solvent.
14. The method according to claim 11 , wherein the deposition is performed by printing or coating selected from the group consisting of spin coating, ink jet printing, screen printing, heliogravure, slot die, roll to roll, or tape casting.