IP Library Granted Patent US 11,127,898
Granted Patent B2
US 11,127,898 · App. 16/071,296 · Granted Sep 21, 2021

Microswitch and electronic device in which same is used

Inventors: Hiroshi Kajiro (Tokyo, JP); Toru Nagai (Tokyo, JP); Kentaro Kinoshita (Tokyo, JP)
Assignee: NIPPON STEEL CORPORATION
H01L45/1226H01L45/149H01L45/1608
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Quick Facts
Patent No.
US 11,127,898
App. No.
16/071,296
Granted
Sep 21, 2021
Kind
B2
Abstract

Provided is a microswitch including a first electrode, a second electrode, and a porous coordination polymer conductor, in which the porous coordination polymer conductor is represented by the following Formula (1), and a metal forming the first electrode and a metal forming the second electrode have different oxidation-reduction potentials, [ ML x ] n ( D ) y   (1), where M represents a metal ion selected from group 2 to group 13 elements in a periodic table, L represents a ligand that has two or more functional groups capable of coordination to M in a structure of L and is crosslinkable with two M's, D represents a conductivity aid that includes no metal element, x represents 0.5 to 4 and y represents 0.0001 to 20 with respect to x as 1, n represents the number of repeating units of a constituent unit represented by [ML x ], and n represents 5 or more.

Claims (60)

1. A microswitch comprising:

a first electrode;

a second electrode; and

a porous coordination polymer conductor,

wherein the porous coordination polymer conductor is represented by the following Formula (1), and

a metal forming the first electrode and a metal forming the second electrode have different oxidation-reduction potentials,

[ ML x ] n ( D ) y   (1),

where M represents a metal ion selected from group 2 to group 13 elements in a periodic table, L represents a ligand that has two or more functional groups capable of coordination to M in a structure of L and is crosslinkable with two M's, D represents a conductivity aid that includes no metal element, x represents 0.5 to 4, y represents 0.0001 to 20 with respect to x as 1, n represents the number of repeating units of a constituent unit represented by [ML x ], and n represents 5 or more.

2. The microswitch according to claim 1 ,

wherein D represents a compound having a carbon-carbon multiple bond in a molecule and having a sulfur or nitrogen atom.

3. The microswitch according to claim 1 ,

wherein D represents a compound having a carbon-carbon multiple bond in a molecule and having an electron-withdrawing group or an electron-donating group bonded to the carbon-carbon multiple bond, or an aromatic compound having an extended conjugated system.

4. The microswitch according to claim 2 ,

wherein D represents an acceptor compound selected from the group consisting of tetracyanoethylene, tetracyanoquinodimethane, benzoquinone, and a derivative thereof.

5. The microswitch according to claim 2 ,

wherein D represents a donor compound selected from tetrathiafulvalene and a derivative thereof.

6. The microswitch according to claim 1 ,

wherein the porous coordination polymer conductor includes two or more D's.

7. The microswitch according to claim 6 ,

wherein at least one of the two or more D's is an organic conductivity aid that is formed of an organic material having electric charge in a molecule.

8. The microswitch according to claim 7 ,

wherein the organic conductivity aid is selected from the group consisting of a quaternary ammonium salt, a phosphonium salt, an amine-alkali metal ion complex, an imidazolium salt, a pyridinium salt, and a sulfonium salt.

9. The microswitch according to claim 1 ,

wherein a D content is 0.001 to 30 mass % with respect to the porous coordination polymer conductor.

10. The microswitch according to claim 1 ,

wherein M represents a divalent, trivalent, or tetravalent metal ion selected from the group consisting of chromium, manganese, iron, cobalt, nickel, copper, zinc, a rare earth element, and zirconium.

11. The microswitch according to claim 1 ,

wherein L represents an aromatic compound having two or more carboxyl groups in a molecule.

12. The microswitch according to claim 1 ,

wherein L represents a non-aromatic compound having two or more carboxyl groups in a molecule.

13. The microswitch according to claim 11 ,

wherein L represents an aromatic compound having two or more coordinating nitrogen atoms in a molecule.

14. The microswitch according to claim 12 ,

wherein L represents a non-aromatic compound having two or more coordinating nitrogen atoms in a molecule.

15. The microswitch according to claim 1 ,

wherein M is selected from the group consisting of magnesium, aluminum, calcium, scandium, manganese, iron (II), iron (III), cobalt, nickel, copper, zinc, zirconium, ruthenium, rhodium, palladium, silver, cadmium, indium, and rhenium, and

L is selected from the group consisting of substituted or unsubstituted terephthalic acid, isophthalic acid, 2,6-naphthalenedicarboxylic acid, 2,7-naphthalenedicarboxylic acid, 4,4′-biphenyldicarboxylic acid, trimesic acid, substituted or unsubstituted 4,4′-bipyridine, 1,4-(4-pyridyl)benzene, and substituted or unsubstituted imidazole.

16. The microswitch according to claim 1 ,

wherein a difference between the oxidation-reduction potential of the metal forming the first electrode and the oxidation-reduction potential of the metal forming the second electrode is 0 eV to 5.0 eV.

17. The microswitch according to claim 1 ,

wherein the metal forming the first electrode is a metal selected from the group consisting of Au, Pt, W, Ru, In, Rh, and silicon, and

the metal forming the second electrode is a metal selected from the group consisting of Cu, Ag, Zn, Co, Mn, and Al.

18. The microswitch according to claim 17 ,

wherein the metal forming the first electrode is selected from the group consisting of indium tin oxide (ITO: Tin-doped In 2 O 3 ), titanium oxide doped with Nb, zinc oxide doped with Ga or Al, and SrTiO 3 , SrRuO 3 , RuO 2 , or IrO 2 doped with Nb.

19. An electronic device that is configured using the microswitch according to claim 1 .

20. A method of manufacturing a microswitch for a CB-RAM, the method comprising:

forming a porous coordination polymer by mixing a metal ion and a ligand with each other;

bringing the porous coordination polymer into contact with first and second electrodes; and

forming a porous coordination polymer conductor by mixing the porous coordination polymer in contact with the first and second electrodes and a conductivity aid with each other,

wherein the metal ion is selected from group 2 to group 13 elements in a periodic table,

the ligand has two or more functional groups capable of coordination to the metal ion in a structure of the ligand and is crosslinkable with two metal ions,

the conductivity aid is a material that includes no metal element, and

a metal forming the first electrode and a metal forming the second electrode have different oxidation-reduction potentials.

21. A method of manufacturing a microswitch, the method comprising:

forming a porous coordination polymer conductor by mixing a metal ion, a ligand, and a conductivity aid with each other; and

bringing the porous coordination polymer conductor into contact with first and second electrodes,

wherein the metal ion is selected from group 2 to group 13 elements in a periodic table,

the ligand has two or more functional groups capable of coordination to the metal ion in a structure of the ligand and is crosslinkable with two metal ions,

the conductivity aid is a material that includes no metal element, and

a metal forming the first electrode and a metal forming the second electrode have different oxidation-reduction potentials.

Assignments (2)
CHANGE OF NAME Recorded May 14, 2019
From: NIPPON STEEL & SUMITOMO METAL CORPORATION
To: NIPPON STEEL CORPORATION
Reel/Frame 049257/0828 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 26, 2018
From: KAJIRO, HIROSHI; NAGAI, TORU; KINOSHITA, KENTARO
To: NIPPON STEEL & SUMITOMO METAL CORPORATION; NATIONAL UNIVERSITY CORPORATION TOTTORI UNIVERSITY
Reel/Frame 046464/0979 →