Array substrate, display apparatus, and method of fabricating array substrate

1. An array substrate, having a plurality of first thin film transistors and a plurality of second thin film transistors, the array substrate comprising:

a base substrate;

a first gate electrode layer on the base substrate and comprising a plurality of first gate electrodes respectively for the plurality of first thin film transistors;

a first gate insulating layer on a side of the first gate electrode layer distal to the base substrate and on a side of the silicon layer proximal to the base substrate;

a silicon layer comprising a plurality of silicon active layers respectively for the plurality of first thin film transistors on the first insulating layer;

a metallic conductive layer on a side of the silicon layer away from the base substrate; and

a metal oxide layer on a side of the metallic conductive layer away from the silicon layer;

wherein the metallic conductive layer comprises gate electrodes of the plurality of second thin film transistors, source electrodes and drain electrodes of the plurality of first thin film transistors;

the plurality of silicon active layers are in direct contact with the first gate insulating layer;

the gate electrodes of the plurality of second thin film transistors and the source electrodes and drain electrodes of the plurality of first thin film transistors are spaced apart from the first gate insulating layer;

the metal oxide layer comprises a plurality of first metal oxide blocks that are floating and a plurality of second metal oxide blocks;

the plurality of second metal oxide blocks are a plurality of metal oxide active layers respectively for the plurality of second thin film transistors;

the plurality of first metal oxide blocks and the plurality of second metal oxide blocks are in a same layer;

an orthographic projection of a respective one of the plurality of first metal oxide blocks on the base substrate at least partially overlaps with an orthographic projection of a respective one of the plurality of silicon active layers on the base substrate; and

an orthographic projection of a respective one of the plurality of second metal oxide blocks on the base substrate at least partially overlaps with an orthographic projection of a respective one of the gate electrodes of the plurality of second thin film transistors on the base substrate.

2. The array substrate of claim 1 , wherein the orthographic projection of a respective one of the plurality of first metal oxide blocks on the base substrate substantially covers an orthographic projection of a channel part of the respective one of the plurality of silicon active layers on the base substrate.

3. The array substrate of claim 1 , wherein the orthographic projection of a respective one of the plurality of first metal oxide blocks on the base substrate completely covers orthographic projections of a source contact part, a channel part, and a drain contact part of the respective one of the plurality of silicon active layers on the base substrate, the source contact part, the drain contact part, and the channel part are made of a silicon material and are in a same layer.

4. The array substrate of claim 1 , wherein the orthographic projection of a respective one of the plurality of first metal oxide blocks on the base substrate at least partially overlaps with an orthographic projection of a respective one of gate electrodes of the plurality of first thin film transistors on the base substrate; and

the respective one of gate electrodes of the plurality of first thin film transistors is in a different layer from the respective one of the plurality of first metal oxide blocks.

5. The array substrate of claim 1 , further comprising an insulating layer on a side of the plurality of silicon active layers away from the first gate insulating layer;

wherein the source electrodes and drain electrodes of the plurality of first thin film transistors, and the gate electrodes of the plurality of second thin film transistors are on a side of the insulating layer away from the plurality of silicon active layers;

wherein a respective source electrode is electrically connected to, and in direct contact with, a respective silicon active layer through a first via extending through the insulating layer;

a respective drain electrode is electrically connected to, and in direct contact with, the respective silicon active layer through a second via extending through the insulating layer;

the orthographic projection of a respective one of the plurality of first metal oxide blocks on the base substrate at least partially overlaps with orthographic projections of the first via and the second via on the base substrate.

6. The array substrate of claim 1 , further comprising a layer comprising an organic material on a side of the metal oxide layer away from the base substrate.

7. The array substrate of claim 6 , wherein the layer comprising the organic material is one or a combination of a passivation layer, a pixel definition layer, and a spacer layer.

8. The array substrate of claim 1 , further comprising:

a second gate insulating layer on a side of the gate electrodes of the plurality of second thin film transistors and the source electrodes and drain electrodes of the plurality of first thin film transistors away from the plurality of silicon active layers;

wherein the gate electrodes of the plurality of second thin film transistors and the source electrodes and drain electrodes of the plurality of first thin film transistors are in direct contact with the second gate insulating layer; and

the plurality of silicon active layers are spaced apart from the second gate insulating layer.

9. The array substrate of claim 1 , wherein the silicon layer is a polysilicon layer, and the plurality of silicon active layers are a plurality of polycrystalline silicon active layers.

10. The array substrate of claim 1 , wherein the metal oxide layer comprises one or a combination of indium gallium zinc oxide, indium tin zinc oxide, indium zinc oxide, aluminum zinc oxide, and zinc oxide.

11. The array substrate of claim 1 , wherein the plurality of first thin film transistors are in a peripheral area, and the plurality of second thin film transistors are in a display area.

12. The array substrate of claim 1 , comprising a pixel driving circuit for driving light emission of a light emitting diode; wherein the pixel driving circuit comprises a respective one of the plurality of first thin film transistors, the respective one of the plurality of first thin film transistors being connected to a data line and a gate electrode of one of the plurality of drive thin film transistors; and a respective one of the plurality of second thin film transistors, the respective one of the plurality of second thin film transistors being connected to a power supply line and the light emitting diode.

13. The array substrate of claim 1 , further comprising a display driver circuitry;

wherein the display driver circuitry comprises the plurality of first thin film transistors.

14. A display apparatus, comprising the array substrate of claim 1 , and a printed circuit board connected to the array substrate.

15. A method of fabricating an array substrate having a plurality of first thin film transistors and a plurality of second thin film transistors, comprising:

forming a first gate electrode layer on the base substrate and comprising a plurality of first gate electrodes respectively for the plurality of first thin film transistors;

forming a first gate insulating layer on a side of the first gate electrode layer distal to the base substrate and on a side of the silicon layer proximal to the base substrate;

forming a silicon layer comprising forming a plurality of silicon active layers respectively for the plurality of first thin film transistors on the first insulating layer;

forming a metallic conductive layer on a side of the silicon layer away from the base substrate; and

forming a metal oxide layer on a side of the metallic conductive layer away from the silicon layer;

wherein the metallic conductive layer comprises gate electrodes of the plurality of second thin film transistors, source electrodes and drain electrodes of the plurality of first thin film transistors;

the plurality of silicon active layers are in direct contact with the first gate insulating layer;

the gate electrodes of the plurality of second thin film transistors and the source electrodes and drain electrodes of the plurality of first thin film transistors are spaced apart from the first gate insulating layer;

forming the metal oxide layer comprises forming a plurality of first metal oxide blocks that are floating and a plurality of second metal oxide blocks;

the plurality of second metal oxide blocks are a plurality of metal oxide active layers respectively for the plurality of second thin film transistors;

the plurality of first metal oxide blocks and the plurality of second metal oxide blocks are in a same layer;

an orthographic projection of a respective one of the plurality of first metal oxide blocks on the base substrate at least partially overlaps with an orthographic projection of a respective one of the plurality of silicon active layers on the base substrate; and

an orthographic projection of a respective one of the plurality of second metal oxide blocks on the base substrate at least partially overlaps with an orthographic projection of a respective one of the gate electrodes of the plurality of second thin film transistors on the base substrate.

16. The method of claim 15 , wherein the orthographic projection of a respective one of the plurality of first metal oxide blocks on the base substrate substantially covers an orthographic projection of a channel part of the respective one of the plurality of silicon active layers on the base substrate.

17. The method of claim 15 , wherein the plurality of second metal oxide blocks are a plurality of metal oxide active layers respectively for the plurality of second thin film transistors.

18. The method of claim 15 , further comprising forming a layer comprising an organic material on a side of the metal oxide layer away from the base substrate;

wherein forming the layer comprising the organic material comprises exposing a photoresist layer using UV irradiation; and

each of the plurality of UV absorption blocks shields the one of the plurality of silicon active layers from the UV irradiation during exposing the photoresist layer using the UV irradiation.