Optoelectronic device module having a silicon interposer
Optoelectronic device modules having a silicon photonics transmitter die connected to a silicon interposer are described. In an example, the optoelectronic device module includes a silicon photonics transmitter die connected to a silicon interposer, and the silicon interposer is disposed between the silicon photonics transmitter die and a substrate. The silicon interposer provides an electrical interconnect between the silicon photonics transmitter die and the substrate, and reduces a likelihood that a hybrid silicon laser on the silicon photonics transmitter die will be damaged during module operation.
1. An optoelectronic device module, comprising:
a substrate having a polymer layer, wherein the substrate includes a top surface;
a silicon photonics transmitter (STX) die having a bottom surface and a hybrid silicon laser on the bottom surface, wherein the bottom surface of the STX die faces the top surface of the substrate; and
a silicon interposer between the hybrid silicon laser and the substrate, wherein the silicon interposer includes a plurality of through silicon vias (TSVs), wherein the STX die is electrically connected to the substrate through the TSVs, and wherein the silicon interposer comprises a plurality of dummy interconnects coupled to the substrate.
2. The optoelectronic device module of claim 1 , wherein the bottom surface of the STX die includes a central region and a peripheral region laterally outward from the central region, wherein the STX die includes a plurality of chip-on-chip (CoC) interconnects in the central region and a plurality of chip-on-substrate (CoS) interconnects in the peripheral region, and wherein the CoS interconnects are attached to the TSVs of the silicon interposer.
3. The optoelectronic device module of claim 2 , wherein the hybrid silicon laser is laterally between the CoC interconnects and the CoS interconnects.
4. The optoelectronic device module of claim 2 , wherein the silicon interposer includes a transmitter driver die (TX IC) to drive the hybrid silicon laser, wherein the TX IC includes a top surface facing the bottom surface of the STX die, and wherein the top surface of the TX IC includes a plurality of top contacts electrically connected to the CoC interconnects of the STX die.
5. The optoelectronic device module of claim 4 , wherein the TSVs pass through the TX IC, wherein the TX IC includes a bottom surface facing the top surface of the substrate, and wherein the silicon interposer includes a thermal bridge extending between the bottom surface of the TX IC and the top surface of the substrate.
6. The optoelectronic device module of claim 5 , wherein the thermal bridge includes the plurality of dummy interconnects below the central region of the STX die, and wherein the dummy interconnects have a higher density per unit area than the TSVs.
7. The optoelectronic device module of claim 4 , wherein the silicon interposer includes a silicon blank, wherein the TSVs pass through the silicon blank, wherein the TX IC includes a bottom surface facing a top surface of the silicon blank, and wherein the silicon interposer includes a thermal bridge coupling the TX IC to the silicon blank.
8. The optoelectronic device module of claim 1 further comprising:
a silicon photonics receiver (SRX) die mounted on the substrate, wherein the SRX die includes a photodetector; and
an optical coupling structure mounted on the STX die, wherein the optical coupling structure includes a silicon lens and a mechanical optical interface to direct light from the hybrid silicon laser to the photodetector.
9. The optoelectronic device module of claim 1 , wherein the hybrid silicon laser is separated from a top surface of the silicon interposer by an empty space.
10. A photonics transmitter subassembly, comprising:
a silicon photonics transmitter (STX) die having a bottom surface and a hybrid silicon laser on the bottom surface, wherein the STX die includes a plurality of chip-on-substrate (CoS) interconnects; and
a silicon interposer having a top surface facing the bottom surface of the STX die, wherein the silicon interposer includes a plurality of through silicon vias (TSVs), and wherein the plurality of CoS interconnects are attached to the TSVs, and wherein the silicon interposer comprises a plurality of dummy interconnects.
11. The photonics transmitter subassembly of claim 10 , wherein the bottom surface of the STX die includes a central region and a peripheral region laterally outward from the central region, wherein the STX die includes a plurality of chip-on-chip (CoC) interconnects in the central region, and wherein the plurality of chip-on-substrate (CoS) interconnects are in the peripheral region.
12. The photonics transmitter subassembly of claim 11 , wherein the hybrid silicon laser is laterally between the CoC interconnects and the CoS interconnects.
13. The photonics transmitter subassembly of claim 11 , wherein the silicon interposer includes a transmitter driver die (TX IC) to drive the hybrid silicon laser, wherein the TX IC includes a top surface facing the bottom surface of the STX die, and wherein the top surface of the TX IC includes a plurality of top contacts electrically connected to the CoC interconnects of the STX die.
14. The photonics transmitter subassembly of claim 13 , wherein the TSVs pass through the TX IC, wherein the TX IC includes a bottom surface, and wherein the TX IC includes a thermal bridge extending from the bottom surface of the TX IC.
15. The photonics transmitter subassembly of claim 13 , wherein the silicon interposer includes a silicon blank, wherein the TSVs pass through the silicon blank, wherein the TX IC includes a bottom surface facing a top surface of the silicon blank, and wherein the silicon interposer includes a thermal bridge coupling the bottom surface of the TX IC to the top surface of the silicon blank.
16. The photonics transmitter subassembly of claim 10 , wherein the hybrid silicon laser is separated from the top surface of the silicon interposer by an empty space.