Nanorod production method and nanorod produced thereby

1. A method of manufacturing a nanorod, the method comprising:

providing a growth substrate and a support substrate;

epitaxial growing a nanomaterial layer on one surface of the growth substrate;

forming a sacrificial layer on one surface of the support substrate;

bonding the nanomaterial layer to the sacrificial layer;

separating the growth substrate from the nanomaterial layer;

flattening the nanomaterial layer;

etching the nanomaterial layer to form a nanorod; and

separating the nanorod by removing the sacrificial layer.

2. The method of manufacturing a nanorod of claim 1 , wherein the growth substrate includes at least one among a glass substrate, a quartz substrate, a sapphire substrate, a plastic substrate, and a bendable flexible polymer film.

3. The method of manufacturing a nanorod of claim 1 , wherein the growth substrate includes at least one among gallium nitride (GaN), silicon carbide (SiC), zinc oxide (ZnO), silicon (Si), gallium phosphide (GaP), spinel (MgAl 2 O 4 ), magnesium oxide (MgO), lithium aluminate (LiAlO 2 ), lithium gallate (LiGaO 2 ), gallium arsenide (GaAs), aluminum nitride (AlN), indium phosphide (InP), and copper (Cu).

4. The method of manufacturing a nanorod of claim 1 , wherein the support substrate includes at least one among a sapphire substrate, a glass substrate, a silicon carbide substrate, a silicon substrate, and a conductive substrate made of a metal material.

5. The method of manufacturing a nanorod of claim 1 , wherein the nanomaterial layer includes at least one among zinc oxide (ZnO), gallium nitride (GaN), gallium arsenide (GaAs), silicon carbide (SiC), tin oxide (SnO 2 ), gallium phosphide (GaP), indium phosphide (InP), zinc selenide (ZnSe), molybdenum disulfide (MoS 2 ), and silicon (Si).

6. The method of manufacturing a nanorod of claim 1 , wherein the nanomaterial layer is epitaxially grown by metal organic chemical vapor deposition (MOCVD).

7. The method of manufacturing a nanorod of claim 6 , wherein the epitaxial growing of the nanomaterial layer on one surface of the growth substrate includes controlling a length of the nanorod by adjusting a deposition thickness of the nanomaterial layer.

8. The method of manufacturing a nanorod of claim 1 , wherein the sacrificial layer includes an insulating layer for bonding to the nanomaterial layer and a metal layer deposited on an upper surface of the insulating layer to bond the insulating layer.

9. The method of manufacturing a nanorod of claim 8 , wherein the sacrificial layer is made of gold (Au), titanium (Ti), iron (Fe), silicon oxide (SiO 2 ), or silicon nitride (SiN).

10. The method of manufacturing a nanorod of claim 1 , wherein the separating of the growth substrate from the nanomaterial layer includes separating the growth substrate from the nanomaterial layer using one among a laser lift-off (LLO) method, a chemical lift-off (CLO) method, and an electrochemical lift-off (ELO) method.

11. The method of manufacturing a nanorod of claim 10 , wherein the flattening of the nanomaterial layer includes flattening the nanomaterial layer separated from the growth substrate using chemical mechanical polishing (CMP).

12. The method of manufacturing a nanorod of claim 9 , wherein, when the sacrificial layer is made of SiO 2 , the separating of the nanorod by removing the sacrificial layer includes removing the sacrificial layer using a buffered oxide etchant (BOE).

13. The method of manufacturing a nanorod of claim 9 , wherein, when the sacrificial layer is made of a metal layer, the separating of the nanorod by removing the sacrificial layer includes removing the sacrificial layer using a metal etchant.