Power semiconductor device
View Patent ↗In a power semiconductor device, the thickness dimension of a protective film of a semiconductor element is made smaller than that of an upper electrode, so a protective film is not pressed by being pressurized from upward when bonded by a metal sintered body, and the force of tearing off the upper electrode riding on an inclined surface of the protective film does not act, so that no crack of the upper electrode occurs, thus maintaining the soundness of the semiconductor element. Also, a lead bonded by a solder to the upper electrode of the semiconductor element is made of a copper-Invar clad material, the linear expansion coefficient of which is optimized, and thereby it is possible to realize a durability superior to that of a heretofore known wire-bonded aluminum wiring.
1. A power semiconductor device, comprising:
a semiconductor element bonded via a metal sintered body to one principal surface of an insulating substrate; an aluminum cooler bonded via a solder to another principal surface of the insulating substrate; an upper electrode and a protective film which are provided on a surface of the semiconductor element opposite to a surface thereof bonded to the insulating substrate; and a lead bonded via a solder to the upper electrode, wherein
the protective film, being disposed so as to be in contact with a peripheral end portion of the upper electrode, is smaller in thickness dimension than the upper electrode, and an end portion of the protective film in contact with the upper electrode has an inclined surface having an inclination of less than 90 degrees with respect to the plane of the semiconductor element, wherein the peripheral end portion of the upper electrode rides on the end portion of the protective film including the inclined surface.
2. The power semiconductor device according to claim 1 , wherein
the lead is made of a clad material of coppers and Invar.
3. The power semiconductor device according to claim 2 , wherein
the lead has a linear expansion coefficient of 8 ppm/° C. to 12 ppm/° C.
4. The power semiconductor device according to claim 2 , wherein
the lead has a three-layer structure of the copper, the Invar, and the copper, and the ratio in thickness dimension therebetween is 1:1:1.
5. The power semiconductor device according to claim 3 , wherein
the lead has a three-layer structure of the copper, the Invar, and the copper, and the ratio in thickness dimension therebetween is 1:1:1.
6. The power semiconductor device according to claim 1 , wherein
the metal sintered body is a silver sintered body.
7. The power semiconductor device according to claim 2 , wherein
the metal sintered body is a silver sintered body.
8. The power semiconductor device according to claim 3 , wherein
the metal sintered body is a silver sintered body.
9. The power semiconductor device according to claim 4 , wherein
the metal sintered body is a silver sintered body.
10. The power semiconductor device according to claim 1 , wherein
the insulating substrate has copper plates bonded one to each surface of silicon nitride which is an insulating layer, and the thickness dimension of the insulating layer is 0.3 mm to 0.34 mm, while the thickness dimension of the copper plates is 0.75 mm to 0.85 mm.
11. The power semiconductor device according to claim 2 , wherein
the insulating substrate has copper plates bonded one to each surface of silicon nitride which is an insulating layer, and the thickness dimension of the insulating layer is 0.3 mm to 0.34 mm, while the thickness dimension of the copper plates is 0.75 mm to 0.85 mm.
12. The power semiconductor device according to claim 3 , wherein
the insulating substrate has copper plates bonded one to each surface of silicon nitride which is an insulating layer, and the thickness dimension of the insulating layer is 0.3 mm to 0.34 mm, while the thickness dimension of the copper plates is 0.75 mm to 0.85 mm.
13. The power semiconductor device according to claim 4 , wherein
the insulating substrate has copper plates bonded one to each surface of silicon nitride which is an insulating layer, and the thickness dimension of the insulating layer is 0.3 mm to 0.34 mm, while the thickness dimension of the copper plates is 0.75 mm to 0.85 mm.
14. The power semiconductor device according to claim 6 , wherein
the insulating substrate has copper plates bonded one to each surface of silicon nitride which is an insulating layer, and the thickness dimension of the insulating layer is 0.3 mm to 0.34 mm, while the thickness dimension of the copper plates is 0.75 mm to 0.85 mm.
15. The power semiconductor device according to claim 1 , wherein
the semiconductor element contains silicon, silicon carbide, or gallium nitride as its semiconductor material.