IP Library Granted Patent US 11,319,513
Granted Patent B2
US 11,319,513 · App. 16/087,397 · Granted May 3, 2022

Non-aqueous tungsten compatible metal nitride selective etchants and cleaners

Inventors: Chien-Pin Sherman Hsu (Berkeley Heights, NJ); Chun-Yi Sam Chiu (Center Valley, PA); Chu-Hung Wade Wei (Center Valley, PA); Mi Yeon Oh (Center Valley, PA)
Assignee: AVANTOR PERFORMANCE MATERIALS, LLC
C11D7/5022B08B3/08C09K13/08C09K13/10C11D7/08C11D7/261C11D7/265C11D7/3218C11D11/0047H01L21/02057
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Quick Facts
Patent No.
US 11,319,513
App. No.
16/087,397
Granted
May 3, 2022
Kind
B2
Abstract

Provided therefore herein is a novel acidic fluoride activated cleaning chemistry. The present invention includes novel acidic fluoride activated, unique organic-solvent based microelectronic selective etchant/cleaner compositions with high metal nitride etch and broad excellent compatibility, including tungsten (W) and low-k. It does not use W-incompatible oxidizers, such as hydrogen peroxide or particle-generating corrosion inhibitors.

Claims (12)

1. A non-aqueous cleaning composition for micro-electronics applications consisting essentially of:

about 0.2% to about 1.5% by weight of a fluoride activating agent, wherein said fluoride activating agent is hydrogen fluoride, Fluoroboric acid, or a combination of hydrogen fluoride and Fluoroboric acid,

about 1.0% to about 2.8% by weight of at least one oxidizer, wherein said one oxidizer is nitric acid or a combination of nitric acid and sulfuric acid, and

about 93.2% to about 98.8% by weight of an anhydrous organic solvent, wherein said anhydrous organic solvent is sulfolane,

wherein said cleaning composition has a pH equal to 5.5 or less, and wherein said composition is in the absence of hydrogen peroxide.

2. The non-aqueous cleaning composition according to claim 1 wherein said cleaning composition also has etch capabilities.

3. The non-aqueous cleaning composition according to claim 1 wherein said cleaning composition is compatible with tungsten and low-κdielectric substrates.

4. A method of cleaning a mirco-electronic substrate comprising contacting said micro-electronic substrate with a cleaning composition consisting essentially of:

about 0.2% to about 1.5% by weight of a fluoride activating agent, wherein said fluoride activating agent is hydrogen fluoride, Fluoroboric acid, or a combination of hydrogen fluoride and Fluoroboric acid,

about 1.0% to about 2.8% by weight of at least one oxidizer, wherein said one oxidizer is nitric acid or a combination of nitric acid and sulfuric acid, and

about 93.2% to about 98.8% by weight of an anhydrous organic solvent, wherein said anhydrous organic solvent is sulfolane,

wherein said cleaning composition has a pH equal to 5.5 or less, and wherein said composition is in the absence of hydrogen peroxide.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 24, 2021
From: HSU, CHIEN-PIN SHERMAN; CHIU, CHUN-YI SAM; WEI, CHU-HUNG WADE; OH, MI YEON
To: AVANTOR PERFORMANCE MATERIALS, LLC
Reel/Frame 056331/0878 →
SECURITY AGREEMENT (NOTES) Recorded Nov 6, 2020
From: AVANTOR FLUID HANDLING, LLC; AVANTOR PERFORMANCE MATERIALS, LLC; NUSIL TECHNOLOGY LLC; RELIABLE BIOPHARMACEUTICAL, LLC; THERAPAK, LLC
To: THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 054343/0414 →