Semiconductor device with a protruding base member
There is a problem that the reliability of insulation is lowered. A length L 2 from a center P of a conductor layer 334 to a peripheral edge portion of an insulating member 333 is formed to be longer than a length L 1 from the center P of the conductor layer 334 to a peripheral edge portion of a protruding portion 307 a of a base member 307 . In other words, a base end surface 308 of the peripheral edge portion of the protruding portion 307 a is located on an inner side with respect to an insulating member end surface 336 of the peripheral edge portion of the insulating member 333 . Further, the insulating member end surface 336 of the insulating member 333 and a conductor layer end surface 344 of the conductor layer form an end surface at the same position. Since the base end surface 308 of the peripheral edge portion of the protruding portion 307 a is located on the inner side with respect to the insulating member end surface 336 of the peripheral edge portion of the insulating member 333 in this manner, an insulation distance can be secured.
1. A semiconductor device comprising:
a semiconductor element;
a conductor plate connected to the semiconductor element;
a metal-made base member facing the conductor plate and constituting an exterior of the semiconductor device; and
an insulating member arranged between the conductor plate and the base member, wherein
the insulating member is constituted to have a conductor layer sandwiched between a first insulating layer and a second insulating layer, forms a capacitance circuit between the first insulating layer and the conductor plate, and forms a capacitance circuit between the second insulating layer and the base member,
the base member has a protruding portion formed in a contact portion between the insulating member and the base member, the protruding portion protruding toward the insulating member,
a length from a center of the conductor layer to a peripheral edge portion of the insulating member including the conductor layer is formed to be longer than a length from the center of the conductor layer to a peripheral edge portion of the protruding portion of the base member, and
a recessed portion is provided in the peripheral edge portion of the protruding portion in the base member, and the length from a center of the conductor layer to the peripheral edge portion of the insulating member including the conductor layer is formed to be longer than a length from the center of the conductor layer to the recessed portion of the base member.
2. The semiconductor device according to claim 1 , wherein a plurality of the conductor plates is provided corresponding to a plurality of the semiconductor elements, and a plurality of the conductor layers is provided facing the plurality of conductor plates.
3. The semiconductor device according to claim 2 , wherein the insulating member is divided into a same number of the insulating members as a number of the plurality of conductor plates, and a plurality of the divided insulating members is arranged respectively facing the plurality of conductor plates, and
a recessed portion is formed in the base member, facing a gap position at which the plurality of divided insulating members is adjacent to each other.
4. The semiconductor device according to claim 2 , wherein the insulating member is divided into a same number of the insulating members as a number of the plurality of conductor plates, and the plurality of divided insulating members is arranged facing the conductor plates having an alternating current potential, of the plurality of conductor plates, and
a length to the peripheral edge portion of the insulating member arranged facing the conductor plate having the alternating current potential is formed to be longer than the length to the peripheral edge portion of the protruding portion of the base member.
5. A semiconductor device comprising:
a semiconductor element;
a conductor plate connected to the semiconductor element;
a metal-made base member facing the conductor plate and constituting an exterior of the semiconductor device; and
an insulating member arranged between the conductor plate and the base member, wherein
the insulating member is constituted to have a conductor layer sandwiched between a first insulating layer and a second insulating layer, forms a capacitance circuit between the first insulating layer and the conductor plate, and forms a capacitance circuit between the second insulating layer and the base member,
the base member has a protruding portion formed in a contact portion between the insulating member and the base member, the protruding portion protruding toward the insulating member,
a length from a center of the conductor layer to a peripheral edge portion of the insulating member including the conductor layer is formed to be longer than a length from the center of the conductor layer to a peripheral edge portion of the protruding portion of the base member, and
wherein an end surface of the peripheral edge portion of the insulating member and an end surface of the conductor plate are aligned so as to be at a same position in a horizontal direction corresponding to a longitudinal direction of the base member.