Polycrystalline SiC substrate and method for manufacturing same
A support substrate 2 is a polycrystalline SiC substrate formed of polycrystalline SiC. Assuming that one of the two sides of the polycrystalline SiC substrate is a first side and that the other side is a second side, a substrate grain size change rate of the polycrystalline SiC substrate, which is a value obtained by dividing a difference between the average value of crystal grain sizes of the polycrystalline SiC on the first side and the average value of crystal grain sizes of the polycrystalline SiC on the second side by a thickness of the polycrystalline SiC substrate, is 0.43% or less. A radius of curvature of the polycrystalline SiC substrate is 142 m or more.
1. A polycrystalline SiC substrate comprising polycrystalline SiC therethrough and having a first side and a second side,
wherein a substrate grain size change rate, which is a value obtained by dividing a difference between an average value of crystal grain sizes of the polycrystalline SiC on the first side and an average value of crystal grain sizes of the polycrystalline SiC on the second side by a thickness of the polycrystalline SiC substrate, is 0.43% or less, and
wherein a radius of curvature of the polycrystalline SiC substrate is 142 m or more.
2. The polycrystalline SiC substrate according to claim 1 ,
wherein, on at least one of the first side or the second side, a degree of surface roughness represented by an arithmetic average roughness is 1 nm or less.
3. The polycrystalline SiC substrate according to claim 1 ,
wherein, on a surface of at least one of the first side or the second side, all recesses formed on the surface are each such that a distance between the surface and a point in the recess farthest from the surface is 3 nm or less.
4. The polycrystalline SiC substrate according to claim 1 ,
wherein the polycrystalline SiC is grown by chemical vapor deposition.
5. The polycrystalline SiC substrate according to claim 1 ,
wherein the polycrystalline SiC is grown by a sublimation method.
6. A method for manufacturing a polycrystalline SiC substrate according to claim 1 , the method comprising:
a base material preparation step comprising growing polycrystalline SiC on a first base material under a first growth condition set in advance and then cutting out the polycrystalline SiC grown on the first base material, to thereby prepare a second base material formed of the polycrystalline SiC;
a growth step comprising growing polycrystalline SiC on the second base material under a second growth condition set in advance; and
a separation step comprising separating at least a part of the polycrystalline SiC grown on the second base material from the second base material, wherein a separated polycrystalline SiC is used as the polycrystalline SiC substrate, the polycrystalline SiC substrate comprising polycrystalline SiC therethrough and having a first side and a second side,
wherein a substrate grain size change rate, which is a value obtained by dividing a difference between an average value of crystal grain sizes of the polycrystalline SiC on the first side and an average value of crystal grain sizes of the polycrystalline SiC on the second side by a thickness of the polycrystalline SiC substrate, is 0.43% or less, and
wherein a radius of curvature of the polycrystalline SiC substrate is 142 m or more.