TEMPLATE FOR GROWING GROUP III-NITRIDE SEMICONDUCTOR LAYER, GROUP III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, AND MANUFACTURING METHOD THEREFOR
A template for growing Group III-nitride semiconductor layers, a Group III-nitride semiconductor light emitting device and methods of manufacturing the same are provided. The template for growing Group III-nitride semiconductor layers includes a growth substrate having a first plane, a second plane opposite to the first plane and a groove extending inwards the growth substrate from the first plane, an insert for heat dissipation placed and secured in the groove, and a nucleation layer formed on a partially removed portion of the first plane.
1 . A template for growing Group III-nitride semiconductor layers, comprising:
a growth substrate having a first plane, a second plane opposite to the first plane and a groove extending inwards the growth substrate from the first plane;
an insert for heat dissipation placed and secured in the groove; and
a nucleation layer formed on a partially removed portion of the first plane.
2 . The template for growing Group III-nitride semiconductor layers of claim 1 , wherein the insert for heat dissipation is made of a ferromagnetic metal.
3 . The template for growing Group III-nitride semiconductor layers of claim 1 , wherein the insert for heat dissipation has a bonding wire form.
4 . The template for growing Group III-nitride semiconductor layers of claim 1 , wherein the insert for heat dissipation is formed by heat treatment of one of metal powder, alloy powders and ceramic powder.
5 . The template for growing Group III-nitride semiconductor layers of claim 1 , comprising:
a fixation substance for securing the insert for heat dissipation in the groove.
6 . The template for growing Group III-nitride semiconductor layers of claim 1 , further comprising:
a high reflectivity substance disposed between the growth substrate and the fixation substance within the groove.
7 . The template for growing Group III-nitride semiconductor layers of claim 1 , wherein the insert for heat dissipation is extended from the first plane to the second plane.
8 . The template for growing Group III-nitride semiconductor layers of claim 1 , wherein the insert for heat dissipation extends inwards from the first plane up to a point before reaching the second plane of the growth substrate.
9 . The template for growing Group III-nitride semiconductor layers of claim 1 , wherein the nucleation layer is made of AlN or AlNO.
10 . The template for growing Group III-nitride semiconductor layers of claim 1 , wherein protrusions are formed on the first plane.
11 .- 28 . (canceled)