IP Library Granted Patent US 11,448,613
Granted Patent B2
US 11,448,613 · App. 16/101,337 · Granted Sep 20, 2022

ChemFET sensor array including overlying array of wells

Inventors: Jonathan M. Rothberg (Guilford, CT); Wolfgang Hinz (Killingworth, CT); John F. Davidson (Guilford, CA); Antoine M. van Oijen (Needham, MA); John Leamon (Stonington, CT); Martin Huber (Carlsbad, CA); Mark James Milgrew (Branford, CT); James Bustillo (Castro Valley, CA)
Assignee: LIFE TECHNOLOGIES CORPORATION
G01N27/4145C12Q1/6869C12Q1/6874G01N27/4148H01L21/82
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Quick Facts
Patent No.
US 11,448,613
App. No.
16/101,337
Granted
Sep 20, 2022
Kind
B2
Abstract

Methods and apparatus relating to FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions.

Claims (16)

1. A method of fabricating a chemically-sensitive field effect transistor (chemFET) sensor device, comprising:

forming an array of chemFET sensors in a substrate; each chemFET sensor having a floating gate structure defining an array of floating gate structures, each floating gate structure including:

a top metal layer of a plurality of metal layers of the floating gate structure including a sensitive area formed upon the top metal layer; and

a first metal layer including a metal conductor providing an electrical connection tying each body connection of all chemFETs in the array to a body bias voltage and a signal line;

forming an array of wells in a dielectric layer that overlays the array of chemFET sensors; each well having a surface defined by sidewalls and a bottom, wherein forming the array of wells includes:

depositing a layer of dielectric material over the array of chemFET sensors; and

etching a defined pattern of an array of wells in the dielectric layer.

2. The method of claim 1 , wherein depositing the layer of dielectric material comprises depositing a layer of tetramethyl ortho silicate (TEOS).

3. The method of claim 1 , further comprising coating the surface of wells of the array of wells with a buffering inhibitor.

4. The method of claim 3 , wherein the buffering inhibitor has no buffer capacity.

5. The method of claim 4 , wherein the buffering inhibitor is cationic.

6. The method of claim 5 , wherein the buffering inhibitor is a quaternary ammonium compound.

7. The method of claim 6 , wherein the quaternary ammonium compounds a tetramethyl ammonium compound.

8. The method of claim 1 , wherein each well in the array of wells is capacitively coupled to between 1 to 4 sensors.

9. The method of claim 1 , wherein the sensitive area is selective for sensing hydrogen ion.

10. The method of claim 1 , wherein the sensitive area is selective for sensing pyrophosphate.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 3, 2022
From: MILGREW, MARK JAMES; BUSTILLO, JAMES
To: LIFE TECHNOLOGIES CORPORATION
Reel/Frame 060704/0440 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 26, 2021
From: ION TORRENT SYSTEMS INCORPORATED
To: LIFE TECHNOLOGIES CORPORATION
Reel/Frame 055039/0416 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 8, 2021
From: ROTHBERG, JONATHAN M.; HINZ, WOLFGANG; DAVIDSON, JOHN F.; VAN OIJEN, ANTOINE M.; LEAMON, JOHN H.; HUBER, MARTIN
To: ION TORRENT SYSTEMS INCORPORATED
Reel/Frame 054859/0517 →