HIGH EFFICIENCY MULTIJUNCTION SOLAR CELLS
Multijunction solar cells having at least four subcells are disclosed, in which at least one of the subcells comprises a base layer formed of an alloy of one or more elements from group III on the periodic table, nitrogen, arsenic, and at least one element selected from the group consisting of Sb and Bi, and each of the subcells is substantially lattice matched. Methods of manufacturing solar cells and photovoltaic systems comprising at least one of the multijunction solar cells are also disclosed.
1 . A method of making a multijunction photovoltaic cell comprising:
(a) providing a Ge substrate; and
(b) depositing a first subcell overlying the Ge substrate, wherein the first subcell comprises a first base layer wherein:
the first base layer comprises Ga 1-x In x N y As 1-y-z Sb z , wherein the values for x, y and z are 0.08≤x≤0.18, 0.025≤y≤0.04, and 0.001≤z≤0.03,
the first base layer is characterized by a first band gap within in a range from 0.9 eV to 1.3 eV, and
the first base layer has a thickness from 1.5 p.m to 3.5 p.m,
wherein each material layer of the first subcell having a thickness greater than 100 nm has an in-plane lattice constant in the fully relaxed state that differs from the in-plane lattice constant of each of the other material layers of the first subcell having a thickness greater than 100 nm and from the substrate by less than 0.6%.
2 . The method of claim 1 , wherein depositing the first subcell comprises depositing by molecular beam epitaxy.
3 . The method of claim 1 , wherein the first base layer has a thickness from 2μm to 3μm.
4 . The method of claim 1 , wherein the Ge substrate is an active junction.
5 . The method of claim 1 , wherein the method comprises, after depositing the first subcell, annealing the photovoltaic cell at a temperature from 400° C. to 1,000° C. for a duration from 10 seconds to 10 hours.
6 . The method of claim 1 , further comprising:
(c) depositing a second subcell overlying the first subcell, wherein the second subcell comprises a second base layer, wherein the second base layer comprises (Al)InGaAs, and is characterized by a second band gap within a range from 1.4 eV to 1.7 eV; and
(d) depositing a third subcell overlying the second subcell, wherein the third subcell comprises a third base layer, wherein the third base layer comprises (Al)InGaP, and is characterized by a third band gap within a range from 1.9 eV to 2.2 eV,
wherein each material layer of each of the second subcell and the third subcell having a thickness greater than 100 nm has an in-plane lattice constant in the fully relaxed state that differs from the in-plane lattice constant of each of the other material layers of the second subcell and the third subcell having a thickness greater than 100 nm and from the substrate by less than 0.6%.
7 . The method of claim 6 , wherein depositing each of the second subcell and the third subcell comprises depositing by metal organic chemical vapor deposition.
8 . The method of claim 6 , wherein the method comprises annealing the photovoltaic cell at a temperature from 400° C. to 1,000° C. for a duration from 10 seconds to 10 hours after one or more of the depositing steps.
9 . The method of claim 1 , further comprising:
(d) depositing a second subcell overlying the first subcell, wherein the second subcell comprises a second base layer, wherein the second base layer comprises (Al)InGaAs, and is characterized by a second band gap within a range from 1.4 eV to 1.5 eV;
(e) depositing a third subcell overlying the second subcell, wherein the third subcell comprises a third base layer, wherein the third base layer comprises InGaP or AlInGaAs and is characterized by a third band gap within a range from 1.6 eV to 1.8 eV; and
(f) depositing a fourth subcell overlying the third subcell, wherein the fourth subcell comprises a fourth base layer, wherein the fourth base layer comprises (Al)InGaP and is characterized by a fourth band gap within a range from 1.9 eV to 2.2 eV;
wherein the first base layer is characterized by a band gap from 1.0 eV to 1.2 eV;
wherein each material layer of each of the second subcell, the third subcell, and the fourth subcell having a thickness greater than 100 nm has an in-plane lattice constant in the fully relaxed state that differs from the in-plane lattice constant of each of the other material layers of the second subcell, the second subcell, and the fourth subcell having a thickness greater than 100 nm and from the substrate by less than 0.6%.
10 . The method of claim 9 , wherein depositing each of the second subcell, the third subcell, and the fourth subcell comprises depositing by metal organic chemical vapor deposition.
11 . The method of claim 10 , wherein the method comprises annealing the photovoltaic cell at a temperature from 400° C. to 1,000° C. for a duration from 10 seconds to 10 hours after one or more of the depositing steps.
12 . The method of claim 1 , further comprising:
(c) depositing a second subcell overlying the first subcell, wherein the second subcell comprises a second base layer, wherein,
the second base layer comprises Ga 1-x In x N y As 1-y-z Sb z , wherein the values for x, y and z are 0.01≤x≤0.06, 0.005≤y≤0.015, and 0.001≤z≤0.02;
the second base layer is characterized by a second band gap within a range from 1.2 eV to 1.4 eV; and
the second base layer has a thickness from 1.5 μm to 3.5 μm,
wherein the first base layer is characterized by a band gap from 0.9 eV to 1.2 eV;
wherein each material layer of the second subcell having a thickness greater than 100 nm has an in-plane lattice constant in the fully relaxed state that differs by less than 0.6% of the in-plane lattice constant of each of the other material layers of each of the second subcell having a thickness greater than 100 nm and of the substrate.
13 . The method of claim 12 , wherein depositing the second subcell comprises depositing by molecular beam epitaxy.
14 . The method of claim 12 , wherein the second base layer has a thickness from 2 μm to 3 μm.
15 . The method of claim 12 , further comprising:
(d) depositing a third subcell overlying the second subcell, wherein the third subcell comprises a third base layer, wherein the third base layer comprises InGaP or AlInGaAs and is characterized by a third band gap within a range from 1.6 eV to 1.8 eV; and
(e) depositing a fourth subcell overlying the third subcell, wherein the fourth subcell comprises a fourth base layer, wherein the fourth base layer comprises (Al)InGaP and is characterized by a fourth band gap within a range from 1.9 eV to 2.2 eV,
wherein each material layer of each of the third subcell and the fourth subcell having a thickness greater than 100 nm has an in-plane lattice constant in the fully relaxed state that differs from the in-plane lattice constant of each of the other material layers of the third subcell and the fourth subcell having a thickness greater than 100 nm and from the substrate by less than 0.6%.
16 . The method of claim 12 , wherein the method comprises annealing the photovoltaic cell at a temperature from 400° C. to 1,000° C. for a duration from 10 seconds to 10 hours after one or more of the depositing steps.
17 . The method of claim 1 , further comprising:
(c) depositing a second subcell overlying the first subcell, wherein the second subcell comprises a second base layer, wherein,.
the second base layer comprises Ga 1-x In x N y As 1-y-z Sb z , wherein the values for x, y and z are 0.01≤x≤0.06, 0.005≤y≤0.015, and 0.001≤z≤0.02;
the second base layer is characterized by a second band gap within a range from 1.1 eV to 1.3 eV; and
the second base layer has a thickness from 1.5 μm to 3.5 μm,
wherein the first base layer is characterized by a first band gap from 0.9 eV to 1.1 eV;
wherein each material layer of the second subcell having a thickness greater than 100 nm has an in-plane lattice constant in the fully relaxed state that differs by less than 0.6% of the in-plane lattice constant of each of the other material layers of each of the second subcell having a thickness greater than 100 nm and of the substrate.
18 . The method of claim 17 , wherein depositing the second subcell comprises depositing by molecular beam epitaxy.
19 . The method of claim 10 , further comprising:
(d) depositing a third subcell overlying the second subcell, wherein the third subcell comprises a third base layer, wherein the third base layer comprises (Al)InGaAs, and is characterized by a third band gap within a range from 1.4 eV to 1.6 eV;
(e) depositing a fourth subcell overlying the third subcell, wherein the fourth subcell comprises a fourth base layer, wherein the fourth base layer comprises (Al)InGaP or AlInGaAs and is characterized by a fourth band gap within a range from 1.6 eV to 1.9 eV; and
(f) depositing a fifth subcell overlying the fourth subcell, wherein the fifth subcell comprises a fifth base layer, wherein the fifth base layer comprises (Al)InGaP and is characterized by a fifth band gap within a range from 1.9 eV to 2.2 eV;
wherein each material layer of each of the third subcell, the fourth subcell, and the fifth subcell having a thickness greater than 100 nm has an in-plane lattice constant in the fully relaxed state that differs from the in-plane lattice constant of each of the other material layers of the third subcell, the fourth subcell, and the fifth subcell having a thickness greater than 100 nm and from the substrate by less than 0.6%.
20 . The method of claim 19 , wherein depositing each of the third subcell, the fourth subcell, and the fifth subcell comprises depositing by metal organic chemical vapor deposition.
21 . The method of claim 17 , further comprising:
(d) depositing a third subcell overlying the second subcell, wherein the third subcell comprise a third base layer, wherein the third base layer comprises (Al)InGa(P)As, and is characterized by a third band gap within a range from 1.4 eV to 1.5 eV;
(e) depositing a fourth subcell overlying the third subcell, wherein the fourth subcell comprises a fourth base layer, wherein the fourth base layer comprises (Al)InGa(P)As and is characterized by a fourth band gap within a range from 1.7 eV to 1.8 eV; and
(f) depositing a fifth subcell overlying the fourth subcell, wherein the fifth subcell comprises a fifth base layer, wherein the fifth base layer comprises (Al)InGaP and is characterized by a fifth band gap within a range from 1.9 eV to 2.2 eV;
wherein the first base layer is characterized by a first band gap from 0.9 eV to 1.0 eV;
wherein the second base layer is characterized by a second band gap from 1.1 eV to 1.2 eV;
wherein each material layer of each of the third subcell, the fourth subcell, and the fifth subcell having a thickness greater than 100 nm has an in-plane lattice constant in the fully relaxed state that differs from the in-plane lattice constant of each of the other material layers of the third subcell, the fourth subcell, and the fifth subcell having a thickness greater than 100 nm and from the substrate by less than 0.6%.
22 . The method of claim 21 , wherein depositing each of the third subcell, the fourth subcell, and the fifth subcell comprises depositing by metal organic chemical vapor deposition.
23 . The method of claim 21 , wherein the method comprises annealing the photovoltaic cell at a temperature from 400° C. to 1,000° C. for a duration from 10 seconds to 10 hours, after one or more of the depositing steps.
24 . A method of making a multijunction photovoltaic cell comprising:
(a) providing a Ge substrate; and
(b) depositing a first subcell overlying the Ge substrate, wherein the first subcell comprises a first base layer wherein:
the first base layer comprises Ga 1-x In x N y As 1-y-z Sb z , wherein the values for x, y and z are 0.08≤x≤0.18, 0.025≤y≤0.04, and 0.001≤z≤0.03,
the first base layer is characterized by a first band gap within in a range from 0.9 eV to 1.0 eV, and
the first base layer has a thickness from 1.5 μm to 3.5 μm;
(c) depositing a second subcell overlying the first subcell, wherein the second subcell comprises a second base layer wherein:
the second base layer comprises Ga 1-x In x N y As 1-y-z Sb z , wherein the values for x, y and z are 0.01≤x≤0.06, 0.005≤y≤0.015, and 0.001≤z≤0.02,
the second base layer is characterized by a second band gap within in a range from 1.1 eV to 1.2 eV, and
the second base layer has a thickness from 1.5 μm to 3.5 μm;
(d) depositing a third subcell overlying the second subcell and comprising a third base layer, wherein the third base layer comprises (Al)InGa(P)As, and is characterized by a third band gap within a range from 1.4 eV to 1.5 eV;
(e) depositing a fourth subcell overlying the third subcell and comprising a fourth base layer, wherein the fourth base layer comprises (Al)InGa(P)As, and is characterized by a fourth band gap within a range from 1.7 eV to 1.8 eV; and
(f) depositing a fifth subcell overlying the fourth subcell and comprising a fifth base layer, wherein the fifth base layer comprises (Al)InGaP, and is characterized by a fifth band gap within a range from 1.9 eV to 2.2 eV;
wherein each material layer of each of the subcells having a thickness greater than 100 nm has an in-plane lattice constant in the fully relaxed state that differs from the in-plane lattice constant of each of the other material layers of the first subcell having a thickness greater than 100 nm and from the substrate by less than 0.6%.
25 . The method of claim 24 , wherein the method comprises annealing the photovoltaic cell at a temperature from 400° C. to 1,000° C. for a duration from 10 seconds to 10 hours after one or more of the depositing steps.
26 . The method of claim 24 , wherein,
depositing each of the first subcell and the second subcell comprises depositing by molecular beam epitaxy; and
depositing each of the third subcell, the fourth subcell, and the fifth subcell comprises depositing by metal organic chemical vapor deposition.
27 . A multijunction photovoltaic cell prepared by the method of claim 1 .
28 . A multijunction photovoltaic cell prepared by the method of claim 24 .