Micro-LED device
A micro-LED, μLED, comprising: a substantially parabolic mesa structure; a light emitting source within the mesa structure; and a primary emission surface on a side of the device opposed to a top of the mesa structure; wherein the mesa structure has an aspect ratio, defined by (H 2 *H 2 )/Ac, of less than 0.5, and the μLED further comprises a reflective surface located in a region from the light emitting source to the primary emission surface, wherein the reflective surface has a roughness, Ra, less than 500 nm.
1. A micro-LED, comprising:
a substantially parabolic mesa structure;
a light emitting source within the mesa structure; and
a primary emission surface on a side of the micro-LED opposed to a top of the mesa structure;
wherein the light emitting source is offset from a central axis of the mesa structure.
2. The micro-LED of claim 1 , further including a light emitting layer within the mesa structure, the light emitting source being a portion of the light emitting layer that emits light, the mesa structure having an aspect ratio defined by (H 2 *H 2 )/Ac less than 0.3, and wherein H 2 is a height of the light emitting layer above a base of the mesa structure and Ac is a cross-sectional area of the mesa structure at the level of the light emitting layer.
3. The micro-LED of claim 1 , further comprising a reflective surface located in a region from the light emitting source to the primary emission surface.
4. The micro-LED of claim 3 , wherein the reflective surface is the primary emission surface.
5. The micro-LED of claim 3 , wherein reflective surface has a roughness Ra less than 300 nm.
6. The micro-LED of claim 3 , wherein the reflective surface is an interface between a first material having a first refractive index and a second material having a second refractive index.
7. The micro-LED of claim 6 , wherein the first material comprises an epilayer and the second material comprises a substrate upon which the micro-LED is fabricated.
8. The micro-LED of claim 6 , wherein the micro-LED is formed from GaN on a sapphire substrate, and wherein the interface between the first and second materials is the interface between the GaN and the sapphire substrate.
9. The micro-LED of claim 3 , wherein the reflective surface has a roughness Ra less than 500 nm in a region greater than or equal to a cross sectional area of a base of the mesa structure.
10. The micro-LED of claim 1 , wherein the mesa structure comprises a truncated top.
11. The micro-LED of claim 1 , wherein the light emitting source is offset by a distance on one or both of perpendicular axes lying in a plane parallel to the primary emission surface.
12. The micro-LED of claim 11 , wherein the distance of the offset in each of the perpendicular axes is in a range from 1 μm to 5 μm.
13. The micro-LED of claim 11 , wherein the distance of the offset in each of the perpendicular axes is in a range from 10% to 50% of the total distance from the central axis to an edge of the mesa structure in each of the perpendicular axes.
14. The micro-LED of claim 1 , wherein the light emitting source is configured to emit light anisotropically such that the light is emitted from the light emitting source substantially in a direction perpendicular to the direction of emission of light from the micro-LED.
15. The micro-LED of claim 14 , wherein the emission of light from the light emitting source is controlled using one or more of index guiding and dipole anisotropy.
16. The micro-LED of claim 1 , further comprising an additive layer applied to the primary emission surface, wherein the additive layer attenuates incident light above a critical angle.
17. The micro-LED of claim 1 , further comprising an additive layer applied to the primary emission surface, wherein the additive layer attenuates incident light above a given wavelength.
18. The micro-LED of claim 1 , further comprising an additive layer applied to the primary emission surface, wherein the additive layer is a multi-level dielectric filter.
19. The micro-LED of claim 1 , wherein a source occupancy of the light emitting source within a light emitting layer of the mesa structure is in a range from 20% to 50%.
20. The micro-LED of claim 1 , further including a light emitting layer within the mesa structure, the light emitting source being a portion of the light emitting layer that emits light, the mesa structure having an aspect ratio defined by (H 3 *H 3 )/Ac less than 0.5, and wherein H 3 is a height of a truncated top above a base of the mesa structure and Ac is a cross-sectional area of the mesa structure at the level of the light emitting layer.