Gas sensor comprising a rotatable Fabry-Perot multilayer etalon
Systems and methods for forming a compact gas sensor include a multilayer etalon as a wavelength discriminating element. The position of the etalon may be adjusted to tune its transmission profile. And embodiment directed to carbon dioxide detection is described.
1. A gas sensing device, comprising:
a broad spectrum infrared emitter;
a sample of a gas;
a multilayer etalon with a transmission profile that transmits wavelengths of light from the broad spectrum infrared emitter within a passband;
a positioner that adjusts a position of the multilayer etalon with respect to the broad spectrum infrared emitter, so as to tune the passband of the multilayer etalon; and
a detector that detects an amount of light transmitted through the multilayer etalon, wherein the multilayer etalon comprises a plurality of dielectric thin films, wherein the plurality of dielectric thin films are disposed one on top of another in a stack wherein the stack includes both metal thin films and dielectric thin films.
2. The gas sensing device in claim 1 , wherein the broad spectrum emitter is the sun and wherein the sample of a gas is earth's atmosphere.
3. The gas sensing device in claim 1 , wherein the positioner modulates an angle of the multilayer etalon, and wherein the broad spectrum infrared emitter is tunable.
4. The gas sensing device in claim 1 , wherein the detector comprises at least one of Si, Ge, InSb, SiGe solid state photodetector, and wherein an output wavelength of the broad spectrum infrared emitter is tunable.
5. The gas sensing device of claim 1 , wherein the multilayer etalon is designed to have a transmission peak in a range around 2300 wavenumbers, wherein the broad spectrum infrared emitter is tunable through the range, and wherein the sample of the gas comprises carbon dioxide.
6. The gas sensing device of claim 1 , wherein the center frequency of the passband of the etalon is tunable within a range of 20 wavenumbers by rotating the multilayer etalon about 10 degrees about its vertical axis.
7. The gas sensing device of claim 1 , wherein the sample of the gas comprises at least one of carbon dioxide, hydrogen, fluorine, oxygen, and nitrogen, and the multilayer etalon is designed to have a transmission peak at around a feature in an absorption band of the sample of the gas.
8. The gas sensing device of claim 1 , wherein the detector comprises a photodiode, and the broad spectrum infrared emitter comprises a vertical cavity surface emitting laser.
9. The gas sensing device of claim 1 , wherein the passband of the multilayer etalon is about 20 wavenumbers wide, and peaks at about 2300 wavenumbers.
10. The gas sensing device of claim 9 , further comprising:
a front reflector and a back reflector, which define a multipass optical cavity around the sample of the gas; and
a half-silvered turning mirror disposed within the multipass optical cavity.
11. The gas sensing device of claim 1 , wherein a total volume of the gas sensing device is less than 5 mm 3 .
12. A method of sensing a gas, comprising:
providing radiation from a broad spectrum infrared emitter;
applying the radiation to a sample of a gas;
transmitting the radiation in a passband of a multilayer etalon with a transmission profile that transmits wavelengths of light from the broad spectrum infrared emitter within a passband; and
detecting an amplitude of the transmitted wavelengths of light,
wherein the multilayer etalon comprises a plurality of dielectric thin films,
wherein the plurality of dielectric thin films are disposed one on top of another in a stack, and
wherein the stack includes both metal thin films and dielectric thin films.
13. The method of claim 12 , further comprising adjusting a position of the etalon with respect to the broad spectrum infrared emitter, so as to tune the passband of the multilayer etalon.
14. The method of claim 12 , wherein the multilayer etalon is designed to have a transmission peak at about 2300 wavenumbers, and the sample of the gas comprises carbon dioxide.
15. The method of claim 12 , wherein the broad spectrum infrared emitter is a laser diode and the detector is a photodiode.
16. The method of claim 12 , wherein the center frequency of the passband of the multilayer etalon is tunable within a range of 20 wavenumbers by rotating the multilayer etalon about 10 degrees about its vertical axis, and wherein the passband of the multilayer etalon is about 2-20 wavenumbers wide.
17. The method of claim 12 , wherein the sample of the gas comprises at least one of carbon dioxide, hydrogen, fluorine, oxygen hydrofluoric acid, hydrochloride acid, methane, ethane, propane, methanol, ethanol, propanol, H2S, OCS, SO2, acetylene, ethylene, chloromethane, fluormethane, and nitrogen, and the multilayer etalon is designed to have a transmission peak at around a feature in an absorption band of the sample of the gas, and wherein the detector comprises a photodiode, and the broad spectrum infrared emitter comprises a vertical cavity surface emitting laser.