Semiconductor devices comprising nickel— and copper—containing interconnects
A method of activating a metal structure on an intermediate semiconductor device structure toward metal plating. The method comprises providing an intermediate semiconductor device structure comprising at least one first metal structure and at least one second metal structure on a semiconductor substrate. The at least one first metal structure comprises at least one aluminum structure, at least one copper structure, or at least one structure comprising a mixture of aluminum and copper and the at least one second metal structure comprises at least one tungsten structure. One of the at least one first metal structure and the at least one second metal structure is activated toward metal plating without activating the other of the at least one first metal structure and the at least one second metal structure. An intermediate semiconductor device structure is also disclosed.
1. A semiconductor device, comprising:
an interconnect comprising a nickel material surrounding a copper-containing material; and
a metal interconnection structure surrounding an end of the interconnect, the metal interconnection structure electrically coupled to the interconnect by another nickel material.
2. The semiconductor device of claim 1 , wherein the metal interconnection structure comprises an annular ring, a bond pad, a component lead, a metal wire, or other metal layer.
3. The semiconductor device of claim 1 , wherein the copper-containing material comprises a conductive pathway comprising copper.
4. The semiconductor device of claim 1 , wherein the interconnect further comprises a seed material surrounding the nickel material.
5. The semiconductor device of claim 1 , wherein the metal interconnection structure comprises copper; aluminum, or combinations thereof.
6. The semiconductor device of claim 1 , wherein the metal interconnection structure comprises a thickness of from approximately 1.0 μm to approximately 1.5 μm.
7. The semiconductor device of claim 1 , further comprising a passivation material comprising at least one of silicon oxide and silicon nitride adjacent to the metal interconnection structure.
8. The semiconductor device of claim 7 , wherein the passivation material comprises a thickness of from approximately 0.5 μm to 10 μm.
9. The semiconductor device of claim 1 , wherein the nickel material comprises a thickness of from approximately 3 μm to approximately 5 μm.
10. The semiconductor device of claim 1 , wherein the another nickel material comprises a thickness of from approximately 500 Å to approximately 10 μm.
11. A semiconductor device, comprising:
an interconnect at least partially extending through a material, the interconnect comprising a nickel material surrounding a copper core;
a copper bond pad around an end of the interconnect; and
another nickel material over the copper bond pad and electrically coupled to the interconnect.
12. The semiconductor device of claim 11 , wherein the interconnect comprises a through-water-interconnect.
13. The semiconductor device of claim 11 , wherein the interconnect comprises a blind-wafer-interconnect.
14. The semiconductor device of claim 11 , wherein the interconnect further comprises one or more of silver, tin, lead, indium, and antimony.
15. The semiconductor device of claim 11 , wherein the interconnect further comprises a tungsten material around the nickel material.
16. The semiconductor device of claim 15 , wherein the tungsten material comprises a thickness of from approximately 0.02 μm to approximately 1 μm.
17. The semiconductor device of claim 15 , further comprising a titanium nitride material adjacent to the tungsten material.
18. A semiconductor device, comprising:
an interconnect extending through a material, the interconnect comprising a nickel material surrounding a copper core;
a copper bond pad around an end of the interconnect; and
another nickel material adjacent the copper bond pad and electrically coupled to the interconnect.
19. The semiconductor device of claim 18 , wherein the copper core comprises a conductive pathway comprising copper.
20. The semiconductor device of claim 18 , wherein the copper core further comprises one or more of silver, tin, lead, indium, and antimony.