Refreshing data stored at a memory component based on a memory component characteristic component
One or more write operations are performed on a memory component. A determination is made as to whether a number of the plurality of write operations performed on the memory component since performance of a refresh operation on the memory component exceeds a threshold value. In response to determining that the number of write operations performed on the memory component exceeds the threshold value, a memory cell of the memory component is identified based on the plurality of write operations. Data stored at memory cells of the memory component that are proximate to the identified memory cell is refreshed.
1. A system comprising:
a memory component; and
a processing device, operatively coupled to the memory component, to:
perform a plurality of write operations on the memory component;
identify a temperature associated with the memory component;
determine whether the temperature associated with the memory component satisfies a temperature threshold value;
in response to determining that the temperature associated with the memory component satisfies the temperature threshold value, adjust a threshold value;
determine whether a number of the plurality of write operations performed on the memory component since performance of a refresh operation on the memory component exceeds the adjusted threshold value;
in response to determining that the number of write operations performed on the memory component exceeds the adjusted threshold value, identify a memory cell of the memory component based on the plurality of write operations; and
refresh data stored at a plurality of memory cells of the memory component that are proximate to the identified memory cell.
2. The system of claim 1 , wherein the adjusted threshold value is determined based on a probability of a write disturb affecting data stored at the memory component.
3. The system of claim 1 , wherein the identified memory cell is associated with a most recent write operation of the plurality of write operations.
4. The system of claim 1 , wherein the memory component comprises a cross-point array.
5. The system of claim 1 , wherein the processing device is further to:
read other data stored at the memory component;
determine that an error rate associated with the other data stored at the memory component exceeds an error rate threshold, wherein the threshold value is further adjusted in response to determining that the error rate associated with the other data stored at the memory component exceeds the error rate threshold.
6. The system of claim 1 , wherein the processing device is further to:
determine whether a total number of write operations performed on the memory component exceeds a write operation threshold value, wherein the threshold value is further adjusted in response to determining that the total number of write operations performed on the memory component exceeds the write operation threshold value.
7. The system of claim 1 , wherein the processing device is further to:
identify a drift time associated with the memory component;
determine that the drift time associated with the memory component exceeds a drift time threshold, wherein the threshold value is further adjusted;
in response to determining that the drift time associated with the memory component exceeds the drift time threshold.
8. The system of claim 1 , wherein the processing device is further to:
determine whether the identified memory cell of the memory component is associated with a recent refresh operation;
in response to determining that the identified memory cell of the memory component is associated with a recent refresh operation, identify another memory cell of the memory component; and
refresh data stored another plurality of memory cells of the memory component that are proximate to the other memory cell.
9. A method comprising:
performing a write operation on a memory component;
identifying a temperature associated with the memory component;
determining whether the temperature associated with the memory component satisfies a temperature threshold value;
in response to determining that the temperature associated with the memory component satisfies the temperature threshold value, adjusting a frequency to perform a refresh operation;
generating a random value based on the adjusted frequency to perform the refresh operation;
determining, by a processing device, whether the generated random value matches a determined value;
in response to determining that the generated random value matches the determined value, identifying a memory cell of the memory component;
performing a refresh operation on a plurality of memory cells of the memory component that are proximate to the identified memory cell.
10. The method of claim 9 , further comprising:
reading data stored at the memory component;
determine that an error rate associated with the data stored at the memory component exceeds an error rate threshold, wherein the frequency is further adjusted; in response to determining that the error rate associated with the data stored at the memory component exceeds the error rate threshold.
11. The method of claim 9 , further comprising:
determining whether a total number of write operations performed on the memory component exceeds a write operation threshold value, wherein the frequency is further adjusted in response to determining that the total number of write operations performed on the memory component exceeds the write operation threshold value.
12. The method of claim 9 , further comprising:
identifying a drift time associated with the memory component;
determining that the drift time associated with the memory component exceeds a drift time threshold, wherein the frequency is further adjusted in response to determining that the drift time associated with the memory component exceeds the drift time threshold, adjusting the frequency.
13. The method of claim 9 , further comprising:
determining whether the identified memory cell of the memory component is associated with a recent refresh operation;
in response to determining that the identified memory cell of the memory component is associated with a recent refresh operation, identifying another memory cell of the memory component; and
refreshing data stored another plurality of memory cells of the memory component that are proximate to the other memory cell.
14. A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to:
perform a plurality of write operations on a memory component;
identify a temperature associated with the memory component;
determine whether the temperature associated with the memory component satisfies a temperature threshold value;
in response to determining that the temperature associated with the memory component satisfies the temperature threshold value, adjust a threshold value;
determine whether a number of the plurality of write operations performed on the memory component since performance of a refresh operation on the memory component exceeds the adjusted threshold value;
in response to determining that the number of write operations performed on the memory component exceeds the adjusted threshold value, identify a memory cell of the memory component based on the plurality of write operations; and
refresh data stored at a plurality of memory cells of the memory component that are proximate to the identified memory cell.
15. The non-transitory computer-readable storage medium of claim 14 , wherein the adjusted threshold value is determined based on a probability of a write disturb affecting data stored at the memory component.
16. The non-transitory computer-readable storage medium of claim 14 , wherein the processing device is further to:
read other data stored at the memory component;
determine that an error rate associated with the other data stored at the memory component exceeds an error rate threshold, wherein the threshold value is further adjusted in response to determining that the error rate associated with the other data stored at the memory component exceeds the error rate threshold.
17. The non-transitory computer-readable storage medium of claim 14 , wherein the processing device is further to:
determine whether a total number of write operations performed on the memory component exceeds a write operation threshold value, wherein the threshold value is further adjusted in response to determining that the total number of write operations performed on the memory component exceeds the write operation threshold value.
18. The non-transitory computer-readable storage medium of claim 14 , wherein the processing device is further to:
identify a drift time associated with the memory component;
determine that the drift time associated with the memory component exceeds a drift time threshold, wherein the threshold value is further adjusted in response to determining that the drift time associated with the memory component exceeds the drift time threshold.