IP Library Granted Patent US 10,311,951
Granted Patent B2
US 10,311,951 · App. 16/108,828 · Granted Jun 4, 2019

Refresh architecture and algorithm for non-volatile memories

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Quick Facts
Patent No.
US 10,311,951
App. No.
16/108,828
Granted
Jun 4, 2019
Kind
B2
Abstract

Methods and systems to refresh a nonvolatile memory device, such as a phase change memory. In an embodiment, as a function of system state, a memory device performs either a first refresh of memory cells using a margined read reference level or a second refresh of error-corrected memory cells using a non-margined read reference level.

Claims (44)

1. A method of refreshing a memory array in a non-volatile memory device, the method comprising:

entering a system-on state;

entering an active state after entering the system-on state;

entering a standby state after the entering the active state;

entering a system-off state after entering the standby state; and

performing a refresh operation in the non-volatile memory device after entering the system-off state, wherein the non-volatile memory device is powered by a same power unit before and after the refresh operation is performed.

2. The method of claim 1 , wherein:

performing the refresh operation includes reading every operational cell in the memory array.

3. The method of claim 1 , wherein performing the refresh operation includes:

reading cells of the memory array against a reference level; and

reprogramming cells that fail the reference level.

4. The method of claim 1 , wherein the refresh operation is performed repetitively at a frequency based on a temperature of the non-volatile memory device after entering the system-off state.

5. The method of claim 1 , wherein the refresh operation is performed in response to an increase in temperature when non-volatile memory device enters the system-off state.

6. The method of claim 1 , wherein the non-volatile memory device receives power from an automobile battery.

7. The method of claim 6 , wherein the non-volatile memory device enters the system-on state when an automobile ignition is actuated.

8. The method of claim 1 , wherein the non-volatile memory device receives power from an automobile battery, and entering the system-off state occurs when an automobile ignition is actuated.

9. The method of claim 1 , wherein the non-volatile memory device receives power from an automobile battery, and wherein:

entering the system-on state occurs when an automobile ignition is actuated to turn an engine on; and

entering the system-off state occurs when the automobile ignition is actuated to turn the engine off.

10. A non-volatile memory device comprising:

a memory array; and

a refresh controller coupled to the memory array, the refresh controller configured to control a refresh operation performed on the memory array after a system-off state is entered, wherein the system-off occurs after the non-volatile memory device enters a system-on state, an active state after entering the system-on state, and a standby state after the entering the active state, wherein the non-volatile memory device is powered by a same power unit before and after the refresh operation is performed.

11. The non-volatile memory device of claim 10 , wherein the refresh controller is configured to initiate the refresh operation in response to output from a temperature sensor.

12. The non-volatile memory device of claim 10 , wherein the refresh controller is configured to initiate the refresh operation in response to output from a refresh timer.

13. The non-volatile memory device of claim 10 , wherein the non-volatile memory device is configured to receive power from an automobile battery, and the refresh controller is configured to initiate the refresh operation when an automobile ignition is actuated.

14. The non-volatile memory device of claim 10 , wherein the refresh controller is configured to control reprogramming of cells in the subset of the memory array, such that the cells store data corrected by an error correction encoding algorithm.

15. The non-volatile memory device of claim 14 , wherein the refresh controller is configured to control:

reading of cells of the memory array against a reference level during the refresh operation; and

reprogramming of cells that fail the reference level during the refresh operation.

16. A system comprising:

a power supply unit configured to couple to an automobile battery;

a memory controller unit coupled to the power supply unit; and

a non-volatile memory device coupled to the memory controller unit, the non-volatile memory device including a memory array, the non-volatile memory device configured to:

enter a system-on state;

enter an active state after entering the system-on state;

enter standby state after the entering the active state;

enter a system-off state after entering the standby state; and

perform a refresh operation in the non-volatile memory device after entering the system-off state, wherein the non-volatile memory device is powered by a same power unit before and after the refresh operation is performed.

17. The system of claim 16 , wherein the non-volatile memory device is configured to read every operational cell in the memory array during the refresh operation.

18. The system of claim 16 , wherein the non-volatile memory device is configured to reprogram cells in the subset of the memory array, such that the cells store data corrected by an error correction encoding algorithm.

19. The system of claim 18 , wherein the non-volatile memory device is configured to:

read cells of the memory array against a reference level during the refresh operation; and

reprogram cells that fail the reference level.

20. The system of claim 16 , wherein the non-volatile memory device is configured to perform the refresh operation in response to an increase in temperature when automobile ignition is actuated to turn an engine off.

Assignments (4)
RELEASE OF SECURITY INTEREST Recorded Nov 14, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 051028/0835 →
RELEASE OF SECURITY INTEREST Recorded Oct 14, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050719/0550 →
SUPPLEMENT NO. 1 TO PATENT SECURITY AGREEMENT Recorded Nov 13, 2018
From: MICRON TECHNOLOGY, INC.
To: JPMORGAN CHASE BANK, N.A.., AS COLLATERAL AGENT
Reel/Frame 047630/0756 →
SUPPLEMENT NO. 10 TO PATENT SECURITY AGREEMENT Recorded Nov 13, 2018
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 048102/0420 →
Cited By (1)
US 12,614,579