Field effect transistors having a fin

1. A transistor, comprising:

a first semiconductor fin;

a second semiconductor fin having a first side adjacent a first side of the first semiconductor fin;

a third semiconductor fin adjacent a second side of the first semiconductor fin;

a fourth semiconductor fin adjacent a second side of the second semiconductor fin;

a first source/drain region in the first semiconductor fin and extending downward from an uppermost surface of the first semiconductor fin;

a second source/drain region in the second semiconductor fin and extending downward from an uppermost surface of the second semiconductor fin;

a first conductive region in the third semiconductor fin and extending downward from an uppermost surface of the third semiconductor fin;

a second conductive region in the fourth semiconductor fin and extending downward from an uppermost surface of the fourth semiconductor fin;

a dielectric between the first and second semiconductor fins and adjacent to sidewalls of the first and second semiconductor fins; and

a control gate over the dielectric and between the first and second semiconductor fins and extending to a level below upper surfaces of the first and second source/drain regions;

wherein the first semiconductor fin, the second semiconductor fin, the third semiconductor fin and the fourth semiconductor fin each have a first conductivity type;

wherein the first source/drain region and the second source/drain region each have a second conductivity type different than the first conductivity type; and

wherein the first conductive region and the second conductive region each have the first conductivity type.