Display device
The purpose of the present invention is to avoid an inflection point in Vg-Id characteristics of the Thin Film transistor, and to avoid step disconnection of the insulating film formed on the semiconductor layer in the display device. The concrete structure of the present invention is: a display device including a TFT substrate having a thin film transistor (TFT) comprising; the TFT having a channel width and a channel length, a gate insulating film formed on a gate electrode, a semiconductor layer formed on the gate insulating film, wherein the gate electrode, near its edge, has a first sloping surface having a first taper angle in a cross sectional view along the direction of the channel width, an edge of the semiconductor layer in the cross sectional view along the direction of the channel width lies on the first sloping surface of the gate electrode.
1. A display device including a TFT substrate having a thin film transistor (TFT) comprising:
a semiconductor layer having a channel between a drain electrode and a source electrode; and
a gate insulating film formed on a gate electrode, the semiconductor layer formed on the gate insulating film,
wherein a channel length direction is defined by a direction from the drain electrode to the source electrode, and a channel width direction is defined by a direction perpendicular to the channel length direction,
wherein the gate electrode, near its edge, has a first slope surface having a first taper angle in a cross sectional view along the channel width direction, and
wherein an edge of the semiconductor layer in the cross sectional view along the channel width direction lies on the first slope surface of the gate electrode and lies on and directly above a slope surface of the gate insulating film.
2. The display device according to claim 1 ,
wherein the first taper angle is 10 degrees to 60 degrees.
3. The display device according to claim 1 ,
wherein the first taper angle is 15 degrees to 40 degrees.
4. The display device according to claim 1 ,
wherein, in a cross sectional view along the channel width direction, the semiconductor layer has a second slope surface having a first angle above the first slope surface of the gate electrode, and a third slope surface, being outside of the second slope surface, having a second angle with respect to the first slope surface.
5. The display device according to claim 4 ,
wherein the second angle is bigger than the first angle.
6. The display device according to claim 4 ,
wherein an angle of the third slope surface with respect to a horizontal surface of the TFT substrate is a third angle, which is a summation of the first angle and the second angle.
7. The display device according to claim 6 ,
wherein the third angle is 90 degrees.
8. The display device according to claim 1 ,
wherein the TFT is formed in a display area.
9. The display device according to claim 1 ,
wherein the display device is a liquid crystal display device.
10. The display device according to claim 1 ,
wherein the display device is an organic EL display device.