Temperature compensated acoustic wave devices
Surface acoustic wave (SAW) resonator, SAW filters, and methods of fabricating SAW filters. A first plurality of parallel conductors extending from a first bus bar are formed on a surface of a 128-degree Y-cut lithium niobate substrate. A second plurality of parallel conductors extending from a second bus bar are formed on the surface of the substrate, the second plurality of parallel conductors interleaved with the first plurality of parallel conductors. An SiO2 layer overlays the first and second pluralities of parallel conductors. The first and second pluralities of parallel conductors are substantially copper and have a thickness D CU defined by 0.12P≤D CU ≤0.24P, where P is a center-to-center spacing of adjacent parallel conductors. The SiO2 layer has a thickness D OX defined by 3.1D CU ≤D OX ≤4.5D CU .
1. A surface acoustic wave (SAW) resonator comprising:
a 128-degree Y-cut lithium niobate substrate;
an interdigital transducer (IDT) formed on a surface of the substrate, the IDT comprising:
a first bus bar and a first plurality of parallel conductors extending from the first bus bar;
a second bus bar and a second plurality of parallel conductors extending from the second bus bar, the second plurality of parallel conductors interleaved with the first plurality of parallel conductors; and
an SiO2 layer overlaying the first and second pluralities of parallel conductors, wherein
the first and second pluralities of parallel conductors are substantially copper and have a thickness D CU defined by 0.161≤D CU ≤0.24P, where P is a center-to-center spacing of adjacent parallel conductors; and
the SiO2 layer has a thickness D OX defined by 3.1D CU ≤D OX ≤4.5D CU .
2. The SAW resonator of claim 1 , wherein
each of the first and second pluralities of parallel conductors has a length normal to the respective bus bar of W+G, where W is an aperture width of the SAW resonator and G is a gap distance,
an end of each of the first plurality of parallel conductors is separated from the second bus bar by the gap distance G, and
an end of each of the second plurality of parallel conductors is separated from the first bus bar by the gap distance G.
3. The SAW resonator of claim 2 , further comprising:
piston masses formed on the first and second pluralities of parallel conductors at the margins of the aperture width W, wherein the SiO2 layer also overlays the piston masses.
4. The SAW resonator of claim 3 , wherein the piston masses are configured to suppress transverse modes.
5. The SAW resonator of claim 3 wherein each piston mass has a thickness D PST and a length L PST defined by 0.1Dcu≤D PST ≤0.5Dcu and P≤L PST ≤2P.
6. The SAW resonator of claim 3 , wherein
each of the first and second pluralities of parallel conductors has a width A normal to its length, and
each of the piston masses has a width A PST defined by 0.5A≤A PST ≤A.
7. A surface acoustic wave (SAW) filter comprising:
a 128-degree Y-cut lithium niobate substrate;
two or more conductor patterns for a corresponding number of SAW resonators formed on a surface of the substrate, each conductor pattern comprising:
a first plurality of parallel conductors extending from a first bus bar; and
a second plurality of parallel conductors extending from a second bus bar, the second plurality of parallel conductors interleaved with the first plurality of parallel conductors,
each of the two or more conductor patterns having a respective center-to-center distance between adjacent parallel conductors,
wherein P MAX is a maximum center-to-center spacing of adjacent parallel conductors among the two or more conductor patterns and P MIN is a minimum center-to-center spacing of adjacent parallel conductors from the two or more conductor patterns; and
an SiO2 layer overlaying the two or more conductor patterns, wherein
the first and second pluralities of parallel conductors are substantially copper and have a thickness D CU defined by 0.12P MAX <D CU <0.24P MIN and 0.15P MIN <D CU , and
the SiO 2 layer has a thickness D OX defined by 3.1D CU ≤D OX ≤4.5D CU .
8. The SAW filter of claim 7 , wherein, for each of the two or more conductor patterns,
each of the first and second pluralities of parallel conductors has a length normal to the respective bus bar of W+G, where W is an aperture width of the SAW resonator and G is a gap distance,
an end of each of the first plurality of parallel conductors is separated from the second bus bar by the gap distance G, and
an end of each of the second plurality of parallel conductors is separated from the first bus bar by the gap distance G.
9. The SAW filter of claim 8 , further comprising, for each of the two or more conductor patterns:
piston masses formed on the first and second pluralities of parallel conductors at the margins of the aperture width W, wherein the SiO2 layer also overlays the piston masses.
10. The SAW filter of claim 9 , wherein the piston masses are configured to suppress transverse modes.
11. The SAW filter of claim 9 wherein, for each of the two or more SAW conductor patterns, each piston mass has a thickness D PST and a length L PST defined by 0.1Dcu≤D PST ≤0.5D cu and P≤L PST ≤2P, where P is the center-to-center spacing of adjacent parallel conductors.
12. The SAW filter of claim 9 , wherein, for each of the two or more conductor patterns,
each of the first and second pluralities of parallel conductors has a width A normal to its length, and
each of the piston masses has a width A PST defined by 0.5A≤A PST ≤A.
13. A method of fabricating a acoustic wave (SAW) filter device comprising:
forming two or more conductor patterns for a corresponding number of SAW resonators on a surface of a 128-degree Y-cut lithium niobate substrate, each conductor pattern comprising:
a first plurality of parallel conductors extending from a first bus bar; and
a second plurality of parallel conductors extending from a second bus bar, the second plurality of parallel conductors interleaved with the first plurality of parallel conductors,
each of the two or more conductor patterns having a respective center-to-center distance between adjacent parallel conductors,
wherein P MAX is a maximum center-to-center spacing of adjacent parallel conductors among the two or more conductor patterns and P MIN is a minimum center-to-center spacing of adjacent parallel conductors from the two or more conductor patterns; and
forming an SiO 2 layer overlaying the two or more conductor patterns, wherein
the first and second pluralities of parallel conductors are substantially copper and have a thickness D CU defined by 0.12P MAX <D CU <0.24P MIN and 0.15P MIN <D CU , and
the SiO2 layer has a thickness D OX defined by 3.1D CU ≤D OX ≤4.5D CU .
14. The method of claim 13 , wherein, for each of the two or more conductor patterns,
each of the first and second pluralities of parallel conductors has a length normal to the respective bus bar of W+G, where W is an aperture width of the SAW resonator and G is a gap distance,
an end of each of the first plurality of parallel conductors is separated from the second bus bar by the gap distance G, and
an end of each of the second plurality of parallel conductors is separated from the first bus bar by the gap distance G.
15. The method of claim 14 , further comprising: for each of the two or more conductor patterns:
forming piston masses on the first and second pluralities of parallel conductors of the two or more conductor patterns at the margins of the respective aperture width W,
wherein the SiO2 layer also overlays the piston masses.
16. The method of claim 15 , wherein the piston masses are configured to suppress transverse modes.
17. The method of claim 15 , wherein, for each of the two or more SAW conductor patterns, each piston mass has a thickness D PST and a length L PST defined by 0.1D CU ≤D PST ≤0.5D CU and P≤L PST ≤2P, where P is the center-to-center spacing of adjacent parallel conductors.
18. The method of claim 15 , wherein, for each of the two or more conductor patterns,
each of the first and second pluralities of parallel conductors has a width A normal to its length, and
each of the piston masses has a width A PST defined by 0.5A≤A PST ≤A.