Cross-point memory and methods for fabrication of same
View Patent ↗A method of fabricating a memory device is disclosed. In one aspect, the method comprises patterning a first conductive line extending in a first direction. The method additionally includes forming a free-standing pillar of a memory cell stack on the first conductive line after patterning the first conductive line. Forming the free-standing pillar includes depositing a memory cell stack comprising a selector material and a storage material over the conductive line and patterning the memory cell stack to form the free-standing pillar. The method further includes patterning a second conductive line on the pillar after patterning the memory cell stack, the second conductive line extending in a second direction crossing the first direction.
1. A method, comprising:
forming a first conductive line and a second conductive line extending in a first direction, the first conductive line and the second conductive line separated by a space;
covering, with a liner material, sidewalls of the first conductive line and the second conductive line and a surface extending between the sidewalls;
depositing a dielectric material over the liner material, wherein a first sidewall and a second sidewall of the dielectric material are in contact with the liner material; and
forming a pillar of a memory cell stack on the first conductive line or the second conductive line after depositing the dielectric material.
2. The method of claim 1 , further comprising:
depositing a pillar liner in contact with a plurality of side surfaces of the pillar, wherein the pillar liner is in contact with the dielectric material and the liner material.
3. The method of claim 2 , further comprising:
depositing a pillar insulating material in contact with the pillar liner, wherein the pillar insulating material is different than the pillar liner.
4. The method of claim 1 , further comprising:
patterning a third conductive line over the pillar, the third conductive line extending in a second direction that intersects the first direction.